Influence of molecular weight on the short-channel effect in polymer-based field-effect transistors

2011 ◽  
Vol 50 (2) ◽  
pp. 117-124 ◽  
Author(s):  
Ali Veysel Tunc ◽  
Bernhard Ecker ◽  
Zekeriya Dogruyol ◽  
Sabrina Jüchter ◽  
Ahmet Lütfi Ugur ◽  
...  
2018 ◽  
Vol 39 (2) ◽  
pp. 300-303 ◽  
Author(s):  
Daewoong Kwon ◽  
Korok Chatterjee ◽  
Ava J. Tan ◽  
Ajay K. Yadav ◽  
Hong Zhou ◽  
...  

Author(s):  
Yuk L. Tsang ◽  
Xiang D. Wang ◽  
Reyhan Ricklefs ◽  
Jason Goertz

Abstract In this paper, we report a transistor model that has successfully led to the identification of a non visual defect. This model was based on detailed electrical characterization of a MOS NFET exhibiting a threshold voltage (Vt) of just about 40mv lower than normal. This small Vt delta was based on standard graphical extrapolation method in the usual linear Id-Vg plots. We observed, using a semilog plot, two slopes in the Id-Vg curves with Vt delta magnified significantly in the subthreshold region. The two slopes were attributed to two transistors in parallel with different Vts. We further found that one of the parallel transistors had short channel effect due to a punch-through mechanism. It was proposed and ultimately confirmed the cause was due to a dopant defect using scanning capacitance microscopy (SCM) technique.


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