Record‐Low Subthreshold‐Swing Negative‐Capacitance 2D Field‐Effect Transistors

Yang Wang; Xiaoyuan Bai; Junwei Chu; Hongbo Wang; Gaofeng Rao; Xinqiang Pan; Xinchuan Du; Kai Hu; Xuepeng Wang; Chuanhui Gong; Chujun Yin; Chao Yang; Chaoyi Yan; Chunyang Wu; Yao Shuai; Xianfu Wang; Min Liao; Jie Xiong

doi:10.1002/adma.202005353

Record‐Low Subthreshold‐Swing Negative‐Capacitance 2D Field‐Effect Transistors

Advanced Materials ◽

10.1002/adma.202005353 ◽

2020 ◽

Vol 32 (46) ◽

pp. 2005353

Author(s):

Yang Wang ◽

Xiaoyuan Bai ◽

Junwei Chu ◽

Hongbo Wang ◽

Gaofeng Rao ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Subthreshold Swing ◽

Negative Capacitance

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MoS2 Negative-Capacitance Field-Effect Transistors with Subthreshold Swing below the Physics Limit

Advanced Materials ◽

10.1002/adma.201800932 ◽

2018 ◽

Vol 30 (28) ◽

pp. 1800932 ◽

Cited By ~ 33

Author(s):

Xingqiang Liu ◽

Renrong Liang ◽

Guoyun Gao ◽

Caofeng Pan ◽

Chunsheng Jiang ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Subthreshold Swing ◽

Negative Capacitance

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Steep Subthreshold Swing in GaN Negative Capacitance Field-Effect Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2019.2934181 ◽

2019 ◽

Vol 66 (10) ◽

pp. 4148-4150 ◽

Cited By ~ 3

Author(s):

Wenjing Song ◽

Yi Li ◽

Kai Zhang ◽

Xuming Zou ◽

Jingli Wang ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Subthreshold Swing ◽

Negative Capacitance

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Proposal for a Negative Capacitance Vacuum Field Effect Transistors with sub-60mV/dec Subthreshold Swing

10.1109/ivnc52431.2021.9600733 ◽

2021 ◽

Author(s):

N. Hernandez ◽

M. Cahay ◽

J. Ludwick ◽

T. Back

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Subthreshold Swing ◽

Vacuum Field ◽

Negative Capacitance

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In2O3 Nanowire Field-Effect Transistors with Sub-60 mV/dec Subthreshold Swing Stemming from Negative Capacitance and Their Logic Applications

ACS Nano ◽

10.1021/acsnano.8b05604 ◽

2018 ◽

Vol 12 (9) ◽

pp. 9608-9616 ◽

Cited By ~ 13

Author(s):

Qian Xu ◽

Xingqiang Liu ◽

Bensong Wan ◽

Zheng Yang ◽

Fangtao Li ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Subthreshold Swing ◽

Negative Capacitance

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Improved Subthreshold Swing and Short Channel Effect in FDSOI n-Channel Negative Capacitance Field Effect Transistors

IEEE Electron Device Letters ◽

10.1109/led.2017.2787063 ◽

2018 ◽

Vol 39 (2) ◽

pp. 300-303 ◽

Cited By ~ 60

Author(s):

Daewoong Kwon ◽

Korok Chatterjee ◽

Ava J. Tan ◽

Ajay K. Yadav ◽

Hong Zhou ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Subthreshold Swing ◽

Negative Capacitance ◽

Short Channel ◽

Short Channel Effect ◽

Channel Effect

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Improved Temperature Resilience and Device Performance of Negative Capacitance Reconfigurable Field Effect Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2019.2961876 ◽

2020 ◽

Vol 67 (2) ◽

pp. 738-744

Author(s):

Priyanka Pandey ◽

Harsupreet Kaur

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Device Performance ◽

Negative Capacitance

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Multidomain Dynamics of Ferroelectric Polarization and its Coherency-Breaking in Negative Capacitance Field-Effect Transistors

2018 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2018.8614531 ◽

2018 ◽

Cited By ~ 3

Author(s):

Hiroyuki Ota ◽

Tsutomu Ikegami ◽

Koichi Fukuda ◽

Junichi Hattori ◽

Hidehiro Asai ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Ferroelectric Polarization ◽

Negative Capacitance

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Field Effect Transistors: Ferroelectric Negative Capacitance Field Effect Transistor (Adv. Electron. Mater. 11/2018)

Advanced Electronic Materials ◽

10.1002/aelm.201870051 ◽

2018 ◽

Vol 4 (11) ◽

pp. 1870051 ◽

Cited By ~ 2

Author(s):

Luqi Tu ◽

Xudong Wang ◽

Jianlu Wang ◽

Xiangjian Meng ◽

Junhao Chu

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Field Effect Transistors ◽

Negative Capacitance ◽

Effect Transistor

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Channel doping effects in negative capacitance field-effect transistors

Solid-State Electronics ◽

10.1016/j.sse.2021.108181 ◽

2021 ◽

Vol 186 ◽

pp. 108181

Author(s):

Baoliang Liu ◽

Xiaoqing Huang ◽

Yanxin Jiao ◽

Ning Feng ◽

Xuhui Chen ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Negative Capacitance ◽

Doping Effects

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Steep Slope p-type 2D WSe2 Field-Effect Transistors with Van Der Waals Contact and Negative Capacitance

2018 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2018.8614493 ◽

2018 ◽

Cited By ~ 3

Author(s):

Jingli Wang ◽

Xuyun Guo ◽

Zhihao Yu ◽

Zichao Ma ◽

Yanghui Liu ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Van Der Waals ◽

Steep Slope ◽

Negative Capacitance ◽

P Type

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