Short-channel effect and device design of extremely scaled tunnel field-effect transistors

Nguyen Dang Chien; Chun-Hsing Shih

doi:10.1016/j.microrel.2014.09.028

Short-channel effect and device design of extremely scaled tunnel field-effect transistors

Microelectronics Reliability ◽

10.1016/j.microrel.2014.09.028 ◽

2015 ◽

Vol 55 (1) ◽

pp. 31-37 ◽

Cited By ~ 11

Author(s):

Nguyen Dang Chien ◽

Chun-Hsing Shih

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Device Design ◽

Short Channel ◽

Short Channel Effect ◽

Channel Effect

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Reverse Short-Channel Effect of Body Factor in Low-Fin Field-Effect Transistors Induced by Corner Effect

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.50 ◽

2005 ◽

Vol 44 (1A) ◽

pp. 50-54 ◽

Cited By ~ 9

Author(s):

Toshiharu Nagumo ◽

Toshiro Hiramoto

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Short Channel ◽

Corner Effect ◽

Short Channel Effect ◽

Channel Effect

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Concise Short-Channel Effect Model for Inversion-type Ultrathin Silicon-on-Insulator p-Channel Metal-Oxide-Silicon Field-Effect Transistors Based on Partitioning of Thin-Film

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.6340 ◽

1995 ◽

Vol 34 (Part 1, No. 12A) ◽

pp. 6340-6345

Author(s):

Shiao-Shien Chen ◽

James B. Kuo

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon On Insulator ◽

Short Channel ◽

Short Channel Effect ◽

Channel Effect ◽

Effect Model ◽

Metal Oxide Silicon

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Improved Subthreshold Swing and Short Channel Effect in FDSOI n-Channel Negative Capacitance Field Effect Transistors

IEEE Electron Device Letters ◽

10.1109/led.2017.2787063 ◽

2018 ◽

Vol 39 (2) ◽

pp. 300-303 ◽

Cited By ~ 60

Author(s):

Daewoong Kwon ◽

Korok Chatterjee ◽

Ava J. Tan ◽

Ajay K. Yadav ◽

Hong Zhou ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Subthreshold Swing ◽

Negative Capacitance ◽

Short Channel ◽

Short Channel Effect ◽

Channel Effect

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Influence of molecular weight on the short-channel effect in polymer-based field-effect transistors

Journal of Polymer Science Part B Polymer Physics ◽

10.1002/polb.22353 ◽

2011 ◽

Vol 50 (2) ◽

pp. 117-124 ◽

Cited By ~ 11

Author(s):

Ali Veysel Tunc ◽

Bernhard Ecker ◽

Zekeriya Dogruyol ◽

Sabrina Jüchter ◽

Ahmet Lütfi Ugur ◽

...

Keyword(s):

Molecular Weight ◽

Field Effect ◽

Field Effect Transistors ◽

Short Channel ◽

Short Channel Effect ◽

Channel Effect

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Suppressed Short-Channel Effect of Double-Gate Metal Oxide Semiconductor Field-Effect Transistor and Its Modeling

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.2096 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 2096-2100 ◽

Cited By ~ 4

Author(s):

Hideki Oka ◽

Ryo Tanabe ◽

Norio Sadachika ◽

Akihiro Yumisaki ◽

Mitiko Miura-Mattausch

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Short Channel ◽

Short Channel Effect ◽

Channel Effect ◽

Effect Transistor

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Dependences of Short-Channel Effect on Doping Profiles for Nanoscale Metal–Oxide–Semiconductor Field-Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.3959 ◽

2006 ◽

Vol 45 (5A) ◽

pp. 3959-3971 ◽

Cited By ~ 1

Author(s):

Chun-Hsing Shih ◽

Chenhsin Lien

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel ◽

Short Channel Effect ◽

Channel Effect ◽

Effect Transistor ◽

Doping Profiles

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Silicon-On-Nothing Electrostatically Doped Junctionless Tunnel Field Effect Transistor (SON-ED-JLTFET): A Short Channel Effect Resilient Design

Silicon ◽

10.1007/s12633-020-00404-6 ◽

2020 ◽

Author(s):

Aishwarya Kaity ◽

Sangeeta Singh ◽

P. N. Kondekar

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Short Channel ◽

Short Channel Effect ◽

Channel Effect ◽

Resilient Design ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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The fringing electric field effect on the short-channel effect threshold voltage of FD SOI NMOS devices with LDD/sidewall oxide spacer structure

Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat No 02TH8616) HKEDM-02 ◽

10.1109/hkedm.2002.1029144 ◽

2003 ◽

Cited By ~ 1

Author(s):

J.B. Kuo ◽

Shih-Chia Lin

Keyword(s):

Electric Field ◽

Threshold Voltage ◽

Field Effect ◽

Electric Field Effect ◽

Short Channel ◽

Short Channel Effect ◽

Channel Effect ◽

Fringing Electric Field

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Physical operation and device design of short-channel tunnel field-effect transistors with graded silicon-germanium heterojunctions

Journal of Applied Physics ◽

10.1063/1.4795777 ◽

2013 ◽

Vol 113 (13) ◽

pp. 134507 ◽

Cited By ~ 20

Author(s):

Chun-Hsing Shih ◽

Nguyen Dang Chien

Keyword(s):

Silicon Germanium ◽

Field Effect ◽

Field Effect Transistors ◽

Device Design ◽

Short Channel

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An Analytical Model of Short-Channel Effect for Metal–Oxide–Semiconductor Field-Effect Transistor with Insulated Shallow Extension

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.7993 ◽

2004 ◽

Vol 43 (12) ◽

pp. 7993-7996 ◽

Cited By ~ 11

Author(s):

Chun-Hsing Shih ◽

Yi-Min Chen ◽

Chenhsin Lien

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel ◽

Short Channel Effect ◽

Channel Effect ◽

Effect Transistor

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