Solution Processed Top-Gate High-Performance Organic Transistor Nonvolatile Memory With Separated Molecular Microdomains Floating-Gate

2017 ◽  
Vol 38 (5) ◽  
pp. 641-644 ◽  
Author(s):  
Chao Wu ◽  
Wei Wang ◽  
Junfeng Song
2020 ◽  
Vol 185 ◽  
pp. 04071
Author(s):  
Sheng Sun ◽  
Shengdong Zhang

Organic thin-film transistor memory based on nano-floating-gate nonvolatile memory was demonstrated by a simple method. The gold nanoparticle that fabricated by thermally evaporated acted as the floating gate. Spin coated PMMA film acted as the tunneling layer. A solution-processed ambipolar semiconductor acted as the active layer. Because of the existence of both hole and electron carriers in bipolar semiconductor materials, it is more conducive to the editing and erasing of memories under positive and negative pressure. The memory based on metal nanoparticles and organic bipolar semiconductor shows good read-write function.


2017 ◽  
Vol 49 ◽  
pp. 218-225 ◽  
Author(s):  
Naien Shi ◽  
Dong Liu ◽  
Xiaolei Jin ◽  
Wandan Wu ◽  
Jun Zhang ◽  
...  

2017 ◽  
Vol 64 (9) ◽  
pp. 3816-3821 ◽  
Author(s):  
Daobing Hu ◽  
Guocheng Zhang ◽  
Huihuang Yang ◽  
Jun Zhang ◽  
Cihai Chen ◽  
...  

2018 ◽  
Vol 113 (24) ◽  
pp. 243301 ◽  
Author(s):  
Ting Xu ◽  
Shuxu Guo ◽  
Meili Xu ◽  
Shizhang Li ◽  
Wenfa Xie ◽  
...  

2019 ◽  
Vol 7 (43) ◽  
pp. 13477-13485 ◽  
Author(s):  
Meili Xu ◽  
Xindong Zhang ◽  
Shizhang Li ◽  
Ting Xu ◽  
Wenfa Xie ◽  
...  

A high-performance multi-bit organic transistor nonvolatile-memory, with good mechanical durability and environmental stability, was prepared for the first time on a paper substrate.


2021 ◽  
pp. 2100599
Author(s):  
Lihua He ◽  
Enlong Li ◽  
Weixin He ◽  
Yujie Yan ◽  
Shuqiong Lan ◽  
...  

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