Complementary of Ferroelectric and Floating Gate Structure for High Performance Organic Nonvolatile Memory

2021 ◽  
pp. 2100599
Author(s):  
Lihua He ◽  
Enlong Li ◽  
Weixin He ◽  
Yujie Yan ◽  
Shuqiong Lan ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
High Performance ◽  
Floating Gate ◽  
Gate Structure

An electrically alterable nonvolatile memory cell using a floating-gate structure

1979 ◽  
Vol 26 (4) ◽  
pp. 576-586 ◽  
Author(s):  
D.C. Guterman ◽  
I.H. Rimawi ◽  
Te-Long Chiu ◽  
R.D. Halvorson ◽  
D.J. McElroy
Keyword(s):  
Nonvolatile Memory ◽  
Memory Cell ◽  
Floating Gate ◽  
Gate Structure

An electrically alterable nonvolatile memory cell using a floating-gate structure

1979 ◽  
Vol 14 (2) ◽  
pp. 498-508 ◽  
Author(s):  
D.C. Guterman ◽  
I.H. Rimawi ◽  
R.D. Halvorson ◽  
D.J. McElroy
Keyword(s):  
Nonvolatile Memory ◽  
Memory Cell ◽  
Floating Gate ◽  
Gate Structure

scholarly journals A Novel Bidirectional AlGaN/GaN ESD Protection Diode

Micromachines ◽  
2022 ◽  
Vol 13 (1) ◽  
pp. 135
Author(s):  
Bin Yao ◽  
Yijun Shi ◽  
Hongyue Wang ◽  
Xinbin Xu ◽  
Yiqiang Chen ◽  
...  
Keyword(s):  
Power System ◽  
Experimental Verification ◽  
High Performance ◽  
Floating Gate ◽  
Gate Electrodes ◽  
Gate Structure ◽  
Esd Protection

Despite the superior working properties, GaN-based HEMTs and systems are still confronted with the threat of a transient ESD event, especially for the vulnerable gate structure of the p-GaN or MOS HEMTs. Therefore, there is still an urgent need for a bidirectional ESD protection diode to improve the ESD robustness of a GaN power system. In this study, an AlGaN/GaN ESD protection diode with bidirectional clamp capability was proposed and investigated. Through the combination of two floating gate electrodes and two pF-grade capacitors connected in parallel between anode or cathode electrodes and the adjacent floating gate electrodes (CGA (CGC)), the proposed diode could be triggered by a required voltage and possesses a high secondary breakdown current (IS) in both forward and reverse transient ESD events. Based on the experimental verification, it was found that the bidirectional triggering voltages (Vtrig) and IS of the proposed diode were strongly related to CGA (CGC). With CGA (CGC) increasing from 5 pF to 25 pF, Vtrig and IS decreased from ~18 V to ~7 V and from ~7 A to ~3 A, respectively. The diode’s high performance demonstrated a good reference for the ESD design of a GaN power system.

New Nanocrystalline si Floating Gate Structue for Nonvolatile Memory Application

2002 ◽  
Vol 737 ◽  
Author(s):  
L.C. Wu ◽  
J.J. Shi ◽  
K.J. Chen ◽  
J. Xu ◽  
W. Li ◽  
...  
Keyword(s):  
Coulomb Blockade ◽  
Nonvolatile Memory ◽  
Theoretical Calculations ◽  
Chemical Vapor ◽  
Floating Gate ◽  
Single Electron ◽  
Layer By Layer ◽  
Gate Structure ◽  
Capacitance Spectroscopy ◽  
Nanocrystalline Si

ABSTRACTWe report a direct experiment evidence for holes and electrons charging in a new nanocrystalline Si (nc-Si) floating gate structure (SiO2/nc-Si/SiO2/c-Si) fabricated in-situ by plasma oxidation and layer by layer deposition technique in a plasma enhanced chemical vapor deposition (PECVD) system. In this nc-Si floating gate structures, the thickness of tunneling SiO2 layer is about 2 nm and the mean grain size of nc-Si is 6 nm obtained from Raman scattering and AFM measurements. The discrete quantum level and Coulomb charging energy for a single electron have been observed in large ensemble of nc-Si dots by frequency dependent capacitance spectroscopy, which demonstrates that the Coulomb blockade for electron in nc-Si dots is larger than size fluctuation effects on the quantum confinement for our nc-Si floating gate structure. Quantitatively, the experiment results of capacitance spectroscopy are in good agreement with the theoretical calculations. By contrasted with silicon single electron transistor memory made by using ultra fancy nanotechnology, nc-Si based memory can be fabricated with a minimum perturbation of conventional silicon technology and may be closest to industrial application.

Application of a new airbridge-gate structure for high-performance Ga0.51In0.49P/In0.15Ga0.85As/GaAs pseudomorphic field-effect transistors

1999 ◽  
Vol 74 (14) ◽  
pp. 1996-1998 ◽  
Author(s):  
Wen-Chau Liu ◽  
Wen-Lung Chang ◽  
Hsi-Jen Pan ◽  
Kuo-Hui Yu ◽  
Shung-Ching Feng ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Gate Structure
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