Organic transistor nonvolatile memory with an integrated molecular floating-gate/tunneling layer

2018 ◽  
Vol 113 (24) ◽  
pp. 243301 ◽  
Author(s):  
Ting Xu ◽  
Shuxu Guo ◽  
Meili Xu ◽  
Shizhang Li ◽  
Wenfa Xie ◽  
...  
2007 ◽  
Vol 28 (5) ◽  
pp. 440-442 ◽  
Author(s):  
Russell Duane ◽  
Quentin Rafhay ◽  
M. Florian Beug ◽  
Michiel van Duuren

2009 ◽  
Vol 1160 ◽  
Author(s):  
Seung Jong Han ◽  
Ki Bong Seo ◽  
Dong Uk Lee ◽  
Eun Kyu Kim ◽  
Se-Mam Oh ◽  
...  

AbstractWe have fabricated the nano-floating gate memory with the TiSi2 and WSi2 nanocrystals embedded in the dielectrics. The TiSi2 and WSi2 nanocrystals were created by using sputtering and rapidly thermal annealing system, and then their morphologies were investigated by transmission electron microscopy. These nanocrystals have a spherical shape with an average diameter of 2-5 nm. The electrical properties of the nano-floating gate memory with TiSi2 and WSi2 nanocrystals were characterized by capacitance-voltage (C-V) hysteresis curve, memory speed and retention. The flat-band voltage shifts of the TiSi2 and WSi2 nanocrystals capacitors obtained appeared up to 4.23 V and 4.37 V, respectively. Their flat-band voltage shifts were maintained up to 1.6 V and 1 V after 1 hr.


2009 ◽  
Vol 95 (20) ◽  
pp. 203112 ◽  
Author(s):  
Hai Liu ◽  
Domingo A. Ferrer ◽  
Fahmida Ferdousi ◽  
Sanjay K. Banerjee

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