Molecular floating-gate organic nonvolatile memory with a fully solution processed core architecture

2016 ◽  
Vol 109 (22) ◽  
pp. 223301 ◽  
Author(s):  
Chao Wu ◽  
Wei Wang ◽  
Junfeng Song
2020 ◽  
Vol 185 ◽  
pp. 04071
Author(s):  
Sheng Sun ◽  
Shengdong Zhang

Organic thin-film transistor memory based on nano-floating-gate nonvolatile memory was demonstrated by a simple method. The gold nanoparticle that fabricated by thermally evaporated acted as the floating gate. Spin coated PMMA film acted as the tunneling layer. A solution-processed ambipolar semiconductor acted as the active layer. Because of the existence of both hole and electron carriers in bipolar semiconductor materials, it is more conducive to the editing and erasing of memories under positive and negative pressure. The memory based on metal nanoparticles and organic bipolar semiconductor shows good read-write function.


2021 ◽  
Vol 33 (23) ◽  
pp. 2170181
Author(s):  
Seungki Jo ◽  
Soyoung Cho ◽  
U Jeong Yang ◽  
Gyeong‐Seok Hwang ◽  
Seongheon Baek ◽  
...  

2021 ◽  
pp. 2100066
Author(s):  
Seungki Jo ◽  
Soyoung Cho ◽  
U Jeong Yang ◽  
Gyeong‐Seok Hwang ◽  
Seongheon Baek ◽  
...  

2010 ◽  
Vol 13 (5) ◽  
pp. H141 ◽  
Author(s):  
Sung-Min Yoon ◽  
Shin-Hyuk Yang ◽  
Soon-Won Jung ◽  
Chun-Won Byun ◽  
Sang-Hee Ko Park ◽  
...  

2007 ◽  
Vol 28 (5) ◽  
pp. 440-442 ◽  
Author(s):  
Russell Duane ◽  
Quentin Rafhay ◽  
M. Florian Beug ◽  
Michiel van Duuren

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