Tunable Intermediate-Logic Ternary Circuits based on MoSe2-WSe2 Heterojunction

Van der Waals (vdW) heterojunctions, which consist of p-type and n-type semiconductors, have provided new features for transition metal dichalcogenides (TMDs). In this work, a negative differential transconductance (NDT) transistor based on a MoSe2-WSe2 heterojunction (MoSe2-WSe2 H-TR) is proposed. The MoSe2-WSe2 H-TR provides desirable device characteristics for ternary circuit operation with a switching behavior of off-state / p-type turn-on / NDT region / p-type turn-on. As a result, a 100% output voltage (VOUT) swing inverter can be achieved in a ternary inverter, which consists of the proposed MoSe2-WSe2 vdW-H-TR and a MoS2 floating-gate transistor. Furthermore, a tunable intermediate-logic ternary circuit operation is demonstrated by controlling the threshold voltage (VTH) in a pull-down n-type MoS2 floating-gate transistor. We also investigated that a light-induced operation on the MoSe2-WSe2 vdW-H-TR offers control of the VOUT amplitude at the intermediate-logic state. Based on the proposed MoSe2-WSe2 vdW-H-TR, this work suggests a strategy to obtain a tunable ternary circuit, thus providing a new concept of heterojunction electronics using layered TMDs.

Nanoparticle floating-gate transistor memory based on solution-processed ambipolar organic semiconductor

Organic thin-film transistor memory based on nano-floating-gate nonvolatile memory was demonstrated by a simple method. The gold nanoparticle that fabricated by thermally evaporated acted as the floating gate. Spin coated PMMA film acted as the tunneling layer. A solution-processed ambipolar semiconductor acted as the active layer. Because of the existence of both hole and electron carriers in bipolar semiconductor materials, it is more conducive to the editing and erasing of memories under positive and negative pressure. The memory based on metal nanoparticles and organic bipolar semiconductor shows good read-write function.

A Smart Floating Gate Transistor with Two Control Gates for Active Noise Control

A smart floating gate transistor with two control gates was proposed for active noise control in bioelectrical signal measurement. The device, which is low cost and capable of large-scale integration, was implemented in a standard single-poly complementary metal–oxide–semiconductor (CMOS) process. A model of the device was developed to demonstrate the working principle. Theoretical analysis and simulation results proved the superposition of the two control gates. A series of test experiments were carried out and the results showed that the device was in accordance with the basic electrical characteristics of a floating gate transistor, including the current–voltage (I–V) characteristics and the threshold characteristics observed on the two control gates. Based on the source follower circuit, the experimental results proved that the device can reduce interference by more than 29 dB, which demonstrates the feasibility of the proposed device for active noise control.