Improved Stability of $\alpha $ -InGaZnO Thin-Film Transistor under Positive Gate Bias Stress by Using Fluorine Plasma Treatment
2017 ◽
Vol 38
(5)
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pp. 576-579
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2017 ◽
Vol 64
(4)
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pp. 1723-1727
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2013 ◽
Vol 34
(5)
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pp. 635-637
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