Improved Resistance Switching Characteristics in Ti-Doped $\hbox{Yb}_{2}\hbox{O}_{3}$ for Resistive Nonvolatile Memory Devices

2012 ◽  
Vol 33 (7) ◽  
pp. 1069-1071 ◽  
Author(s):  
Somnath Mondal ◽  
Jim-Long Her ◽  
Fa-Hsyang Chen ◽  
Shao-Ju Shih ◽  
Tung-Ming Pan
Keyword(s):  
Nonvolatile Memory ◽  
Resistance Switching ◽  
Memory Devices ◽  
Nonvolatile Memory Devices ◽  
Switching Characteristics

scholarly journals Resistance Switching Characteristics in ZnO-Based Nonvolatile Memory Devices

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Fu-Chien Chiu
Keyword(s):  
Pulse Width ◽  
Nonvolatile Memory ◽  
High Resistance State ◽  
Resistance Switching ◽  
Memory Devices ◽  
Reset Voltage ◽  
Conducting Path ◽  
Nonvolatile Memory Devices ◽  
Resistance State ◽  
Switching Characteristics

Bipolar resistance switching characteristics are demonstrated in Pt/ZnO/Pt nonvolatile memory devices. A negative differential resistance or snapback characteristic can be observed when the memory device switches from a high resistance state to a low resistance state due to the formation of filamentary conducting path. The dependence of pulse width and temperature on set/reset voltages was examined in this work. The exponentially decreasing trend of set/reset voltage with increasing pulse width is observed except when pulse width is larger than 1 s. Hence, to switch the ZnO memory devices, a minimum set/reset voltage is required. The set voltage decreases linearly with the temperature whereas the reset voltage is nearly temperature-independent. In addition, the ac cycling endurance can be over 106switching cycles, whereas, the dependence of HRS/LRS resistance distribution indicates that a significant memory window closure may take place after about 102  dc switching cycles.

Effect of Top Electrode Material on Resistive Switching Characteristics in MnO2 Nonvolatile Memory Devices

2019 ◽  
Vol 41 (3) ◽  
pp. 475-482 ◽  
Author(s):  
Yu-Ting Tsai ◽  
Ting-Chang Chang ◽  
Chao-Cheng Lin ◽  
Lan-Shin Chiang ◽  
Shih-Cheng Chen ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Electrode Material ◽  
Nonvolatile Memory ◽  
Memory Devices ◽  
Nonvolatile Memory Devices ◽  
Switching Characteristics
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