Effect of Top Electrode Material on Resistive Switching Characteristics in MnO2 Nonvolatile Memory Devices

Yu-Ting Tsai; Ting-Chang Chang; Chao-Cheng Lin; Lan-Shin Chiang; Shih-Cheng Chen; Simon M. Sze; Tseung-Yuen Tseng

doi:10.1149/1.3633064

Effect of Top Electrode Material on Resistive Switching Characteristics in MnO2 Nonvolatile Memory Devices

ECS Transactions ◽

10.1149/1.3633064 ◽

2019 ◽

Vol 41 (3) ◽

pp. 475-482 ◽

Cited By ~ 2

Author(s):

Yu-Ting Tsai ◽

Ting-Chang Chang ◽

Chao-Cheng Lin ◽

Lan-Shin Chiang ◽

Shih-Cheng Chen ◽

...

Keyword(s):

Resistive Switching ◽

Electrode Material ◽

Nonvolatile Memory ◽

Memory Devices ◽

Nonvolatile Memory Devices ◽

Switching Characteristics

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Effect of Electrode Material On Resistive Switching Characteristics in TaON Nonvolatile Memory Devices

ECS Meeting Abstracts ◽

10.1149/ma2013-01/2/3 ◽

2013 ◽

Keyword(s):

Resistive Switching ◽

Electrode Material ◽

Nonvolatile Memory ◽

Memory Devices ◽

Nonvolatile Memory Devices ◽

Switching Characteristics

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Effect of Electrode Material on Resistive Switching Characteristics in TaON Nonvolatile Memory Devices

ECS Transactions ◽

10.1149/05329.0001ecst ◽

2013 ◽

Vol 53 (29) ◽

pp. 1-7

Author(s):

M.-C. Chen ◽

T.-C. Chang ◽

Y.-C. Chiu ◽

S.-C. Chen ◽

S.-Y. Huang ◽

...

Keyword(s):

Resistive Switching ◽

Electrode Material ◽

Nonvolatile Memory ◽

Memory Devices ◽

Nonvolatile Memory Devices ◽

Switching Characteristics

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Effect of Top Electrode Material on Resistive Switching Characteristics in MnO2 Nonvolatile Memory Devices

ECS Meeting Abstracts ◽

10.1149/ma2011-02/27/1930 ◽

2011 ◽

Keyword(s):

Resistive Switching ◽

Electrode Material ◽

Nonvolatile Memory ◽

Memory Devices ◽

Nonvolatile Memory Devices ◽

Switching Characteristics

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Resistive switching characteristics and conduction mechanisms of nonvolatile memory devices based on Ga and Sn co-doped ZnO films

Thin Solid Films ◽

10.1016/j.tsf.2014.12.021 ◽

2015 ◽

Vol 587 ◽

pp. 71-74 ◽

Cited By ~ 6

Author(s):

Dohyun Oh ◽

Dong Yeol Yun ◽

Nam Hyun Lee ◽

Tae Whan Kim

Keyword(s):

Resistive Switching ◽

Nonvolatile Memory ◽

Zno Films ◽

Memory Devices ◽

Conduction Mechanisms ◽

Nonvolatile Memory Devices ◽

Doped Zno ◽

Switching Characteristics ◽

Co Doped

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Electrode-Material-Dependent Switching Characteristics of Organic Nonvolatile Memory Devices Based on Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) Film

IEEE Electron Device Letters ◽

10.1109/led.2010.2041182 ◽

2010 ◽

Vol 31 (4) ◽

pp. 368-370 ◽

Cited By ~ 23

Author(s):

Heonjun Ha ◽

Ohyun Kim

Keyword(s):

Electrode Material ◽

Nonvolatile Memory ◽

Memory Devices ◽

Nonvolatile Memory Devices ◽

Switching Characteristics

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Resistive switching characteristics of thin NiO film based flexible nonvolatile memory devices

Microelectronic Engineering ◽

10.1016/j.mee.2011.05.037 ◽

2012 ◽

Vol 91 ◽

pp. 144-146 ◽

Cited By ~ 26

Author(s):

Hongjun Wang ◽

Changwei Zou ◽

Lin Zhou ◽

Canxin Tian ◽

Dejun Fu

Keyword(s):

Resistive Switching ◽

Nonvolatile Memory ◽

Memory Devices ◽

Nonvolatile Memory Devices ◽

Switching Characteristics

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Effect of Al incorporation amount upon the resistive-switching characteristics for nonvolatile memory devices using Al-doped ZnO semiconductors

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4930896 ◽

2015 ◽

Vol 33 (5) ◽

pp. 051216 ◽

Cited By ~ 9

Author(s):

Won-Ho Lee ◽

Eom-Ji Kim ◽

Sung-Min Yoon

Keyword(s):

Resistive Switching ◽

Nonvolatile Memory ◽

Memory Devices ◽

Nonvolatile Memory Devices ◽

Doped Zno ◽

Switching Characteristics

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Effect of the Electrode Material on the Electrical-Switching Characteristics of Nonvolatile Memory Devices Based on Poly($o$-anthranilic acid) Thin Films

IEEE Electron Device Letters ◽

10.1109/led.2008.2000667 ◽

2008 ◽

Vol 29 (7) ◽

pp. 694-697 ◽

Cited By ~ 22

Author(s):

Dongjin Lee ◽

Sungsik Baek ◽

Moonhor Ree ◽

Ohyun Kim

Keyword(s):

Thin Films ◽

Electrode Material ◽

Anthranilic Acid ◽

Nonvolatile Memory ◽

Memory Devices ◽

Electrical Switching ◽

Nonvolatile Memory Devices ◽

Switching Characteristics

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Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices

Applied Physics Letters ◽

10.1063/1.3280864 ◽

2009 ◽

Vol 95 (26) ◽

pp. 262113 ◽

Cited By ~ 125

Author(s):

Seunghyup Lee ◽

Heejin Kim ◽

Dong-Jin Yun ◽

Shi-Woo Rhee ◽

Kijung Yong

Keyword(s):

Thin Film ◽

Stainless Steel ◽

Resistive Switching ◽

Nonvolatile Memory ◽

Memory Devices ◽

Zno Thin Film ◽

Nonvolatile Memory Devices ◽

Switching Characteristics

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Wavelength dependent light tunable resistive switching graphene oxide nonvolatile memory devices

Carbon ◽

10.1016/j.carbon.2019.07.007 ◽

2019 ◽

Vol 153 ◽

pp. 81-88 ◽

Cited By ~ 5

Author(s):

Ayoub H. Jaafar ◽

N.T. Kemp

Keyword(s):

Graphene Oxide ◽

Resistive Switching ◽

Nonvolatile Memory ◽

Memory Devices ◽

Nonvolatile Memory Devices

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