scholarly journals Bipolar switching characteristics of nonvolatile memory devices based on poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) thin film

2008 ◽  
Vol 93 (3) ◽  
pp. 033309 ◽  
Author(s):  
Heonjun Ha ◽  
Ohyun Kim
Keyword(s):  
Thin Film ◽  
Nonvolatile Memory ◽  
Memory Devices ◽  
Bipolar Switching ◽  
Nonvolatile Memory Devices ◽  
Switching Characteristics

Effect of Top Electrode Material on Resistive Switching Characteristics in MnO2 Nonvolatile Memory Devices

2019 ◽  
Vol 41 (3) ◽  
pp. 475-482 ◽  
Author(s):  
Yu-Ting Tsai ◽  
Ting-Chang Chang ◽  
Chao-Cheng Lin ◽  
Lan-Shin Chiang ◽  
Shih-Cheng Chen ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Electrode Material ◽  
Nonvolatile Memory ◽  
Memory Devices ◽  
Nonvolatile Memory Devices ◽  
Switching Characteristics

scholarly journals Nonvolatile memory devices based on undoped and Hf- and NaF-doped ZnO thin film transistors with Ag nanowires inserted between ZnO and gate insulator interface

RSC Advances ◽  
2017 ◽  
Vol 7 (44) ◽  
pp. 27699-27706 ◽  
Author(s):  
Manoj Kumar ◽  
Hakyung Jeong ◽  
Dongjin Lee
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Nonvolatile Memory ◽  
Charge Trapping ◽  
Gate Insulator ◽  
Memory Devices ◽  
Zno Thin Film ◽  
Insulator Interface ◽  
Ag Nanowires ◽  
Nonvolatile Memory Devices

Nonvolatile memory devices based on solution-processed thin film transistors (TFTs) of undoped ZnO and ZnO doped with Hf and NaF incorporating Ag nanowires (AgNWs) as charge trapping media between the ZnO and insulator interface are demonstrated.

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