Effect of Al incorporation amount upon the resistive-switching characteristics for nonvolatile memory devices using Al-doped ZnO semiconductors

2015 ◽  
Vol 33 (5) ◽  
pp. 051216 ◽  
Author(s):  
Won-Ho Lee ◽  
Eom-Ji Kim ◽  
Sung-Min Yoon
Keyword(s):  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Memory Devices ◽  
Nonvolatile Memory Devices ◽  
Doped Zno ◽  
Switching Characteristics

Effect of Top Electrode Material on Resistive Switching Characteristics in MnO2 Nonvolatile Memory Devices

2019 ◽  
Vol 41 (3) ◽  
pp. 475-482 ◽  
Author(s):  
Yu-Ting Tsai ◽  
Ting-Chang Chang ◽  
Chao-Cheng Lin ◽  
Lan-Shin Chiang ◽  
Shih-Cheng Chen ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Electrode Material ◽  
Nonvolatile Memory ◽  
Memory Devices ◽  
Nonvolatile Memory Devices ◽  
Switching Characteristics

Effect of Electrode Material on Resistive Switching Characteristics in TaON Nonvolatile Memory Devices

2013 ◽  
Vol 53 (29) ◽  
pp. 1-7
Author(s):  
M.-C. Chen ◽  
T.-C. Chang ◽  
Y.-C. Chiu ◽  
S.-C. Chen ◽  
S.-Y. Huang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Electrode Material ◽  
Nonvolatile Memory ◽  
Memory Devices ◽  
Nonvolatile Memory Devices ◽  
Switching Characteristics

Resistive Switching Mechanism in $\hbox{Zn}_{x}\hbox{Cd}_{1 - x}\hbox{S}$ Nonvolatile Memory Devices

2007 ◽  
Vol 28 (1) ◽  
pp. 14-16 ◽  
Author(s):  
Zheng Wang ◽  
Peter B. Griffin ◽  
Jim McVittie ◽  
Simon Wong ◽  
Paul C. McIntyre ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Memory Devices ◽  
Switching Mechanism ◽  
Nonvolatile Memory Devices ◽  
Resistive Switching Mechanism
Sign in / Sign up

Export Citation Format

Share Document