Poly-Si Nanowire Nonvolatile Memory With Nanocrystal Indium–Gallium–Zinc–Oxide Charge-Trapping Layer

2010 ◽  
Vol 31 (12) ◽  
pp. 1407-1409 ◽  
Author(s):  
Lun-Chun Chen ◽  
Yung-Chun Wu ◽  
Tien-Chun Lin ◽  
Jyun-Yang Huang ◽  
Min-Feng Hung ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Nonvolatile Memory ◽  
Charge Trapping ◽  
Indium Gallium Zinc Oxide ◽  
Oxide Charge ◽  
Si Nanowire ◽  
Indium Gallium

scholarly journals Channel Shape Effects on Device Instability of Amorphous Indium–Gallium–Zinc Oxide Thin Film Transistors

Micromachines ◽  
2020 ◽  
Vol 12 (1) ◽  
pp. 2
Author(s):  
Seung Gi Seo ◽  
Seung Jae Yu ◽  
Seung Yeob Kim ◽  
Jinheon Jeong ◽  
Sung Hun Jin
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Charge Trapping ◽  
Type A ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Channel Shape ◽  
Field Effects ◽  
Indium Gallium

Channel shape dependency on device instability for amorphous indium–gallium–zinc oxide (a-IGZO) thin film transistors (TFTs) is investigated by using various channel shape devices along with systematic electrical characterization including DC I-V characeristics and bias temperature stress tests. a-IGZO TFTs with various channel shapes such as zigzag, circular, and U-type channels are implemented and their vertical and lateral electric field stress (E-field) effects are systematically tested and analyzed by using an experimental and modeling study. Source and drain (S/D) electrode asymmetry and vertical E-field effects on device instability are neglibible, whereas the lateral E-field effects significantly affect device instability, particularly for zigzag channel shape, compared to circular and U-type TFTs. Moreover, charge trapping time (τ) for zigzag-type a-IGZO TFTs is extracted as 3.8 × 104, which is at least three-times smaller than those of other channel-type a-IGZO TFTs, hinting that local E-field enhancement can critically affect the device reliability. The Technology Computer Aided Design (TCAD) simulation results reveal the locally enhanced E-field at both corner region in the channel in a quantitative mode and its correlation with hemisphere radius (ρ) values.

Nonvolatile Memory With Extremely Low-Leakage Indium-Gallium-Zinc-Oxide Thin-Film Transistor

2012 ◽  
Vol 47 (9) ◽  
pp. 2258-2265 ◽  
Author(s):  
Hiroki Inoue ◽  
Takanori Matsuzaki ◽  
Shuhei Nagatsuka ◽  
Yutaka Okazaki ◽  
Toshinari Sasaki ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Nonvolatile Memory ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Low Leakage ◽  
Indium Gallium

The charge trapping characteristics of Si3N4 and Al2O3 layers on amorphous-indium-gallium-zinc oxide thin films for memory application

2012 ◽  
Vol 100 (18) ◽  
pp. 183503 ◽  
Author(s):  
Ji Sim Jung ◽  
Sang-Ho Rha ◽  
Un Ki Kim ◽  
Yoon Jang Chung ◽  
Yoon Soo Jung ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Charge Trapping ◽  
Indium Gallium Zinc Oxide ◽  
Oxide Thin Films ◽  
Indium Gallium

Twin Thin-Film Transistor Nonvolatile Memory With an Indium–Gallium–Zinc–Oxide Floating Gate

2013 ◽  
Vol 34 (1) ◽  
pp. 75-77 ◽  
Author(s):  
Min-Feng Hung ◽  
Yung-Chun Wu ◽  
Jiun-Jye Chang ◽  
Kuei-Shu Chang-Liao
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Nonvolatile Memory ◽  
Thin Film Transistor ◽  
Floating Gate ◽  
Indium Gallium Zinc Oxide ◽  
Indium Gallium
Sign in / Sign up

Export Citation Format

Share Document