Twin Thin-Film Transistor Nonvolatile Memory With an Indium–Gallium–Zinc–Oxide Floating Gate

2013 ◽  
Vol 34 (1) ◽  
pp. 75-77 ◽  
Author(s):  
Min-Feng Hung ◽  
Yung-Chun Wu ◽  
Jiun-Jye Chang ◽  
Kuei-Shu Chang-Liao
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Nonvolatile Memory ◽  
Thin Film Transistor ◽  
Floating Gate ◽  
Indium Gallium Zinc Oxide ◽  
Indium Gallium

Nonvolatile Memory With Extremely Low-Leakage Indium-Gallium-Zinc-Oxide Thin-Film Transistor

2012 ◽  
Vol 47 (9) ◽  
pp. 2258-2265 ◽  
Author(s):  
Hiroki Inoue ◽  
Takanori Matsuzaki ◽  
Shuhei Nagatsuka ◽  
Yutaka Okazaki ◽  
Toshinari Sasaki ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Nonvolatile Memory ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Low Leakage ◽  
Indium Gallium

Indium–gallium–zinc–oxide thin-film transistor with a planar split dual-gate structure

2017 ◽  
Vol 31 (35) ◽  
pp. 1750332
Author(s):  
Yu-Rong Liu ◽  
Jie Liu ◽  
Jia-Qi Song ◽  
Pui-To Lai ◽  
Ruo-He Yao
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Practical Applications ◽  
Gate Structure ◽  
Dual Gate ◽  
Indium Gallium ◽  
Output Characteristics

An amorphous indium–gallium–zinc–oxide (a-IGZO) thin-film transistor (TFT) with a planar split dual gate (PSDG) structure has been proposed, fabricated and characterized. Experimental results indicate that the two independent gates can provide dynamical control of device characteristics such as threshold voltage, sub-threshold swing, off-state current and saturation current. The transconductance extracted from the output characteristics of the device increases from [Formula: see text] to [Formula: see text] for a change of control gate voltage from −2 V to 2 V, and thus the device could be used in a variable-gain amplifier. A significant advantage of the PSDG structure is its flexibility in controlling the device performance according to the need of practical applications.

scholarly journals Effect of top gate potential on bias-stress for dual gate amorphous indium-gallium-zinc-oxide thin film transistor

AIP Advances ◽  
2016 ◽  
Vol 6 (7) ◽  
pp. 075217 ◽  
Author(s):  
Minkyu Chun ◽  
Jae Gwang Um ◽  
Min Sang Park ◽  
Md Delwar Hossain Chowdhury ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Bias Stress ◽  
Dual Gate ◽  
Gate Potential ◽  
Indium Gallium

High Performance Indium‐Gallium‐Zinc Oxide Thin Film Transistor via Interface Engineering

2020 ◽  
Vol 30 (34) ◽  
pp. 2003285 ◽  
Author(s):  
Yepin Zhao ◽  
Zhengxu Wang ◽  
Guangwei Xu ◽  
Le Cai ◽  
Tae‐Hee Han ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
High Performance ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Interface Engineering ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium
Sign in / Sign up

Export Citation Format

Share Document