Flexible nonvolatile memory transistors using indium gallium zinc oxide-channel and ferroelectric polymer poly(vinylidene fluoride-co-trifluoroethylene) fabricated on elastomer substrate
2015 ◽
Vol 33
(5)
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pp. 051201
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Poly-Si Nanowire Nonvolatile Memory With Nanocrystal Indium–Gallium–Zinc–Oxide Charge-Trapping Layer
2010 ◽
Vol 31
(12)
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pp. 1407-1409
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2012 ◽
Vol 47
(9)
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pp. 2258-2265
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2013 ◽
Vol 34
(1)
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pp. 75-77
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2015 ◽
Vol 135
(6)
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pp. 192-198
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2020 ◽
Vol 8
(1)
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pp. 165-172
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