Demonstration of Asymmetric Gate-Oxide Thickness Four-Terminal FinFETs Having Flexible Threshold Voltage and Good Subthreshold Slope

2007 ◽  
Vol 28 (3) ◽  
pp. 217-219 ◽  
Author(s):  
Meishoku Masahara ◽  
Radu Surdeanu ◽  
Liesbeth Witters ◽  
Gerben Doornbos ◽  
Viet H. Nguyen ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Subthreshold Slope ◽  
Gate Oxide Thickness

A Model of Threshold Voltage in FinFET

2011 ◽  
Vol 216 ◽  
pp. 167-170
Author(s):  
Jian Liu ◽  
Li Li ◽  
X.H. Zhang
Keyword(s):  
Numerical Simulation ◽  
Threshold Voltage ◽  
Doping Concentration ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Polysilicon Gate ◽  
Gate Oxide Thickness ◽  
Threshold Voltage Model

A physics-based threshold voltage model is proposed, according to the electrostatics distribution in Si body of FinFET which is obtained by 2-D numerical simulation. Threshold voltage of FinFET calculated from the model is matched with results of numerical simulation. Influences of polysilicon gate doping concentration, Si body doping concentration, the width and height of Si body and the gate oxide thickness on threshold voltage were investigated. As results,Si body doping concentration, gate doping concentration and the width of Si body have been found to be the most important parameters for the design of threshold voltage of FinFET-like devices.

Performance Improvement of >10kV SiC IGBTs with Retrograde p-Well

2019 ◽  
Vol 963 ◽  
pp. 639-642 ◽  
Author(s):  
Amit K. Tiwari ◽  
Marina Antoniou ◽  
Neo Lophitis ◽  
Samuel Perkins ◽  
Tatjana Trajkovic ◽  
...  
Keyword(s):  
Performance Improvement ◽  
High Voltage ◽  
Threshold Voltage ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Low Energy ◽  
Doping Profile ◽  
Doping Density ◽  
Gate Oxide Thickness ◽  
Promising Solution

A p-well consisting of a retrograde doping profile is investigated for performance improvement of >10kV SiC IGBTs. The retrograde p-well, which can be realized using low-energy shallow implants, effectively addresses the punch-through, a common issue in high-voltage vertical architectures consisting of a conventional p-well with typical doping density of 1e17cm-3 and depth 1μm. The innovative approach offers an extended control over the threshold voltage. Without any punch-through, a threshold voltage in the range 6V-7V is achieved with gate-oxide thickness of 100nm. Gate oxide thickness is typically restricted to 50nm if a conventional p-well with doping density of 1e17cm-3 is utilized. We therefore propose a highly promising solution, the retrograde p-well, for the development of >10kV SiC IGBTs.

Improved Device Performance of In0.5Ga0.5P/In0.22Ga0.78As/GaAs MOS p-HEMT using a Selective Liquid Phase Oxidation

2002 ◽  
Vol 744 ◽  
Author(s):  
I-H Kang ◽  
J-W Lee ◽  
S-J Kang ◽  
S-J Jo ◽  
S-K In ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Oxide Layer ◽  
Threshold Voltage ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Liquid Phase Oxidation ◽  
Device Performance ◽  
Gate Oxide Thickness ◽  
Phase Oxidation ◽  
Rf Performances

ABSTRACTThe DC and RF characteristics of In0.5Ga0.5P/In0.22Ga0.78As/GaAs MOS p-HEMTs with different gate oxide thickness were investigated and compared with those of Schottky-gate p-HEMT without the gate oxide layer. The oxide layer was implemented by using a liquid phase oxidation technique. It was found that transconductance (gm), threshold voltage and breakdown voltage characteristics of MOS p-HEMTs depended strongly on the gate oxide thickness. The MOS p-HEMTs showed superior DC and RF performances compared with those of GaAs-based MOSFET having oxide/n-GaAs or oxide/InGaAs interface.

Sign in / Sign up

Export Citation Format

Share Document