2nd International Symposium on Plasma Process-Induced Damage
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Scalability Of Plasma Damage With Gate Oxide Thickness

2nd International Symposium on Plasma Process-Induced Damage ◽

10.1109/ppid.1997.596669 ◽

1997 ◽

Keyword(s):

Gate Oxide ◽

Oxide Thickness ◽

Plasma Damage ◽

Gate Oxide Thickness

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Correlation Of Plasma-induced Charging Voltage Measured In-situ By Microelectromechanical Sensors With Device Degradation

2nd International Symposium on Plasma Process-Induced Damage ◽

10.1109/ppid.1997.596745 ◽

1997 ◽

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Effect Of Ion-bombardment Intensity Due To The Charging On Sidewall Trench Formatiom

2nd International Symposium on Plasma Process-Induced Damage ◽

10.1109/ppid.1997.596753 ◽

1997 ◽

Keyword(s):

Ion Bombardment

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Reduction Of Electron Shading Damage With Pulse-modulated ECR Plasma

2nd International Symposium on Plasma Process-Induced Damage ◽

10.1109/ppid.1997.596689 ◽

1997 ◽

Keyword(s):

Ecr Plasma

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Technology Trends And Opportunities For Giga-scale Integration

2nd International Symposium on Plasma Process-Induced Damage ◽

10.1109/ppid.1997.596666 ◽

1997 ◽

Keyword(s):

Scale Integration ◽

Technology Trends

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Author index

2nd International Symposium on Plasma Process-Induced Damage ◽

10.1109/ppid.1997.596766 ◽

1997 ◽

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Studies Of Plasma Uniformity And Global Wafer Charging In A High Density, Inductively Coupled Metal Etcher

2nd International Symposium on Plasma Process-Induced Damage ◽

10.1109/ppid.1997.596765 ◽

1997 ◽

Keyword(s):

High Density ◽

Inductively Coupled ◽

Wafer Charging

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A New Evaluation Technique Of Plasma-induced Si Substrate Damage By Photoreflectance Spectroscopy

2nd International Symposium on Plasma Process-Induced Damage ◽

10.1109/ppid.1997.596749 ◽

1997 ◽

Keyword(s):

Evaluation Technique ◽

Si Substrate ◽

Photoreflectance Spectroscopy

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Sporadic Charging In Interlevel Oxide Deposition In Conventional Plasma And HDP Deposition Systems

2nd International Symposium on Plasma Process-Induced Damage ◽

10.1109/ppid.1997.596724 ◽

1997 ◽

Keyword(s):

Oxide Deposition

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Reduction Of Charging Damage Through Substrate Potential Control

2nd International Symposium on Plasma Process-Induced Damage ◽

10.1109/ppid.1997.596732 ◽

1997 ◽

Keyword(s):

Substrate Potential ◽

Potential Control

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2nd International Symposium on Plasma Process-Induced DamageLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Scalability Of Plasma Damage With Gate Oxide Thickness

Correlation Of Plasma-induced Charging Voltage Measured In-situ By Microelectromechanical Sensors With Device Degradation

Effect Of Ion-bombardment Intensity Due To The Charging On Sidewall Trench Formatiom

Reduction Of Electron Shading Damage With Pulse-modulated ECR Plasma

Technology Trends And Opportunities For Giga-scale Integration

Author index

Studies Of Plasma Uniformity And Global Wafer Charging In A High Density, Inductively Coupled Metal Etcher

A New Evaluation Technique Of Plasma-induced Si Substrate Damage By Photoreflectance Spectroscopy

Sporadic Charging In Interlevel Oxide Deposition In Conventional Plasma And HDP Deposition Systems

Reduction Of Charging Damage Through Substrate Potential Control

2nd International Symposium on Plasma Process-Induced Damage
Latest Publications