I-MOS Transistor With an Elevated Silicon–Germanium Impact-Ionization Region for Bandgap Engineering

2006 ◽  
Vol 27 (12) ◽  
pp. 975-977 ◽  
Author(s):  
Eng-Huat Toh ◽  
Grace Huiqi Wang ◽  
Lap Chan ◽  
Guo-Qiang Lo ◽  
Ganesh Samudra ◽  
...  
Keyword(s):  
Silicon Germanium ◽  
Impact Ionization ◽  
Bandgap Engineering ◽  
Mos Transistor ◽  
Ionization Region

Strain and Materials Engineering for the I-MOS Transistor With an Elevated Impact-Ionization Region

2007 ◽  
Vol 54 (10) ◽  
pp. 2778-2785 ◽  
Author(s):  
Eng-Huat Toh ◽  
Grace Huiqi Wang ◽  
Lap Chan ◽  
Guo-Qiang Lo ◽  
Ganesh Samudra ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Mos Transistor ◽  
Materials Engineering ◽  
Ionization Region

DC extraction of the base and emitter resistances in polysilicon-emitter npn BJTs

1996 ◽  
Vol 74 (S1) ◽  
pp. 172-176 ◽  
Author(s):  
V. Van ◽  
M. J. Deen ◽  
J. Kendall ◽  
D. S. Malhi ◽  
S. Voinigescu ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Bipolar Junction Transistors ◽  
New Techniques ◽  
Current Range ◽  
Base Current ◽  
Ionization Yield ◽  
Ionization Method ◽  
Ionization Region ◽  
Polysilicon Emitter ◽  
The Impact

Five DC techniques of extracting the base and emitter resistances of polysilicon-emitter npn bipolar junction transistors (BJTs) are presented and compared. The five techniques include three previously published techniques and two new techniques, constant base current and IB–IE plane fitting. Application of the five methods to a 0.8 × 16 μm2 npn BJT shows that all but the method of impact ionization yield comparable Rc and Rbb values at high currents. The impact ionization method, which extracts Rc and Rbb in the impact ionization region and at low base currents, yields markedly different Rc and Rbb values, indicating that the values of the parasitic resistances depend on the current range over which the extraction is performed. Thus the choice of which method is best to use depends on the current range over which Rc and Rbb are to be measured, and the validity of the assumptions used in the method when applied to the device.

Design of a Capacitorless Dynamic Random Access Memory Based on Junctionless Dual-Gate Field-Effect Transistor with a Silicon-Germanium/Silicon Nanotube

2021 ◽  
Vol 21 (8) ◽  
pp. 4235-4242
Author(s):  
Sang Ho Lee ◽  
Min Su Cho ◽  
Hye Jin Mun ◽  
Jin Park ◽  
Hee Dae An ◽  
...  
Keyword(s):  
Silicon Germanium ◽  
Computer Aided Design ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Random Access ◽  
Floating Body ◽  
Bandgap Energy ◽  
Bandgap Engineering ◽  
Floating Body Effect ◽  
Effect Transistor

In this paper, a 1T-DRAM based on the junctionless field-effect transistor (JLFET) with a silicon-germanium (SiGe) and silicon (Si) nanotube structure was designed and investigated by using technology computer-aided design (TCAD) simulations. Utilizing bandgap engineering to make a quantum well in the core–shell structure, the storage pocket is formed by the difference in bandgap energy between SiGe and Si. By applying different voltage conditions at the inner gate and outer gate, excess holes are generated in the storage region by the band-to-band tunneling (BTBT) mechanism. The BTBT mechanism results in the floating body effect, which is the principle of 1T-DRAM. The varying amount of the accumulated holes in the SiGe region allows differentiating between state “1” and state “0.” Additionally, the outer gate plays a role of the conventional gate, while the inner gate retains holes in the hold state by applying voltage. Consequently, the optimized SiGe/Si JLFET-based nanotube 1T-DRAM achieved a high sensing margin of 15.4 μA/μm, and a high retention time of 105 ms at a high temperature of 358 K. In addition, it has been verified that a single cycle of 1T-DRAM operations consumes only 33.6 fJ of energy, which is smaller than for previously proposed 1T-DRAMs.

A novel CMOS compatible L-shaped impact-ionization MOS (LI-MOS) transistor

2006 ◽  
Author(s):  
Eng-Huat Toh ◽  
Grace Huiqi Wang ◽  
Guo-Qiang Lo ◽  
N. Balasubramanian ◽  
Chih-Hang Tung ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Mos Transistor ◽  
Cmos Compatible
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