MOSFET channel resistance characterization from the triode region to impact ionization region with the inductive breakdown network

2015 ◽  
Vol 55 (3-4) ◽  
pp. 481-485 ◽  
Author(s):  
Chie-In Lee ◽  
Wei-Cheng Lin
Keyword(s):  
Impact Ionization ◽  
Channel Resistance ◽  
Ionization Region

DC extraction of the base and emitter resistances in polysilicon-emitter npn BJTs

1996 ◽  
Vol 74 (S1) ◽  
pp. 172-176 ◽  
Author(s):  
V. Van ◽  
M. J. Deen ◽  
J. Kendall ◽  
D. S. Malhi ◽  
S. Voinigescu ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Bipolar Junction Transistors ◽  
New Techniques ◽  
Current Range ◽  
Base Current ◽  
Ionization Yield ◽  
Ionization Method ◽  
Ionization Region ◽  
Polysilicon Emitter ◽  
The Impact

Five DC techniques of extracting the base and emitter resistances of polysilicon-emitter npn bipolar junction transistors (BJTs) are presented and compared. The five techniques include three previously published techniques and two new techniques, constant base current and IB–IE plane fitting. Application of the five methods to a 0.8 × 16 μm2 npn BJT shows that all but the method of impact ionization yield comparable Rc and Rbb values at high currents. The impact ionization method, which extracts Rc and Rbb in the impact ionization region and at low base currents, yields markedly different Rc and Rbb values, indicating that the values of the parasitic resistances depend on the current range over which the extraction is performed. Thus the choice of which method is best to use depends on the current range over which Rc and Rbb are to be measured, and the validity of the assumptions used in the method when applied to the device.

I-MOS Transistor With an Elevated Silicon–Germanium Impact-Ionization Region for Bandgap Engineering

2006 ◽  
Vol 27 (12) ◽  
pp. 975-977 ◽  
Author(s):  
Eng-Huat Toh ◽  
Grace Huiqi Wang ◽  
Lap Chan ◽  
Guo-Qiang Lo ◽  
Ganesh Samudra ◽  
...  
Keyword(s):  
Silicon Germanium ◽  
Impact Ionization ◽  
Bandgap Engineering ◽  
Mos Transistor ◽  
Ionization Region

Strain and Materials Engineering for the I-MOS Transistor With an Elevated Impact-Ionization Region

2007 ◽  
Vol 54 (10) ◽  
pp. 2778-2785 ◽  
Author(s):  
Eng-Huat Toh ◽  
Grace Huiqi Wang ◽  
Lap Chan ◽  
Guo-Qiang Lo ◽  
Ganesh Samudra ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Mos Transistor ◽  
Materials Engineering ◽  
Ionization Region

Dendritic Growth Failure of a Mesa Diode

1997 ◽  
Author(s):  
P. Singh ◽  
V. Cozzolino ◽  
G. Galyon ◽  
R. Logan ◽  
K. Troccia ◽  
...  
Keyword(s):  
Electric Fields ◽  
Dendritic Growth ◽  
Silicon Oxide ◽  
Impact Ionization ◽  
Electron Tunneling ◽  
Growth Failure ◽  
Side Wall ◽  
Oxide Interface ◽  
Band Bending ◽  
Cross Section Area

Abstract The time delayed failure of a mesa diode is explained on the basis of dendritic growth on the oxide passivated diode side walls. Lead dendrites nucleated at the p+ side Pb-Sn solder metallization and grew towards the n side metallization. The infinitesimal cross section area of the dendrites was not sufficient to allow them to directly affect the electrical behavior of the high voltage power diodes. However, the electric fields associated with the dendrites caused sharp band bending near the silicon-oxide interface leading to electron tunneling across the band gap at velocities high enough to cause impact ionization and ultimately the avalanche breakdown of the diode. Damage was confined to a narrow path on the diode side wall because of the limited influence of the electric field associated with the dendrite. The paper presents experimental details that led to the discovery of the dendrites. The observed failures are explained in the context of classical semiconductor physics and electrochemistry.

scholarly journals Temperature dependence of impact ionization in GaAs

2003 ◽  
Vol 50 (10) ◽  
pp. 2027-2031 ◽  
Author(s):  
C. Groves ◽  
R. Ghin ◽  
J.P.R. David ◽  
G.J. Rees
Keyword(s):  
Temperature Dependence ◽  
Impact Ionization
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