Performance analysis of junction-less double Gate n-p-n impact ionization MOS transistor (JLDG n-IMOS)

Double gate impact ionization MOS transistor: Proposal and investigation

Superlattices and Microstructures ◽

10.1016/j.spmi.2017.01.015 ◽

2017 ◽

Vol 102 ◽

pp. 477-483

Author(s):

Zhaonian Yang ◽

Yue Zhang ◽

Yuan Yang ◽

Ningmei Yu

Keyword(s):

Impact Ionization ◽

Double Gate ◽

Mos Transistor

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Performance analysis of shielded channel double-gate junctionless and junction MOS transistor

International Journal of Electronics Letters ◽

10.1080/21681724.2017.1335785 ◽

2017 ◽

Vol 6 (2) ◽

pp. 192-203 ◽

Cited By ~ 1

Author(s):

S. C. Wagaj ◽

Shailaja Patil ◽

Y. V. Chavan

Keyword(s):

Performance Analysis ◽

Double Gate ◽

Mos Transistor

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Design and Performance Analysis of Proposed Biosensor based on Double Gate Junctionless Transistor

Silicon ◽

10.1007/s12633-021-01335-6 ◽

2021 ◽

Author(s):

Pawandeep Kaur ◽

Avtar Singh Buttar ◽

Balwinder Raj

Keyword(s):

Performance Analysis ◽

Double Gate ◽

Junctionless Transistor ◽

And Performance

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Performance analysis of long Ge channel double gate (DG) p MOSFETs with high-k gate dielectrics based on carrier concentration formulation

Microelectronics Reliability ◽

10.1016/j.microrel.2011.02.004 ◽

2011 ◽

Vol 51 (6) ◽

pp. 1105-1112 ◽

Cited By ~ 6

Author(s):

Swagata Bhattacherjee ◽

Abhijit Biswas

Keyword(s):

Performance Analysis ◽

Carrier Concentration ◽

Gate Dielectrics ◽

Double Gate ◽

High K

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Performance Analysis of Gate Electrode Work Function Variations in Double-gate Junctionless FET

Silicon ◽

10.1007/s12633-020-00774-x ◽

2020 ◽

Author(s):

Sandeep Kumar ◽

Arun Kumar Chatterjee ◽

Rishikesh Pandey

Keyword(s):

Performance Analysis ◽

Work Function ◽

Double Gate ◽

Gate Electrode

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Performance analysis of single and dual channel vertical strained SiGe impact ionization MOSFET (VESIMOS)

2013 IEEE Student Conference on Research and Developement ◽

10.1109/scored.2013.7002588 ◽

2013 ◽

Author(s):

Ismail Saad ◽

Bun Seng ◽

Zuhir Hamzah ◽

Nurmin Bolong ◽

Khairul Anuar ◽

...

Keyword(s):

Performance Analysis ◽

Impact Ionization ◽

Dual Channel ◽

Strained Sige

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Simulation of the gate tunnel current in the double gate (DG) MOS transistor

Journal of Computational Electronics ◽

10.1007/s10825-006-8834-1 ◽

2006 ◽

Vol 5 (2-3) ◽

pp. 143-148 ◽

Cited By ~ 6

Author(s):

B. Majkusiak ◽

J. Walczak

Keyword(s):

Double Gate ◽

Tunnel Current ◽

Mos Transistor

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Performance Analysis of Impact of Source/Drain Doping Gradients Well as Roll-Off Widths on Gate Induced Drain Leakage of Double Gate Metal Oxide Semiconductor Field Effect Transistor

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2018.2426 ◽

2018 ◽

Vol 13 (11) ◽

pp. 1705-1710

Author(s):

Parveen Kumar ◽

Sandeep Singh Gill

Keyword(s):

Performance Analysis ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor

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Device and circuit level performance analysis of novel InAs/Si heterojunction double gate tunnel field effect transistor

Superlattices and Microstructures ◽

10.1016/j.spmi.2016.04.008 ◽

2016 ◽

Vol 94 ◽

pp. 119-130 ◽

Cited By ~ 13

Author(s):

S. Ahish ◽

Dheeraj Sharma ◽

M.H. Vasantha ◽

Y.B.N. Kumar

Keyword(s):

Performance Analysis ◽

Field Effect ◽

Field Effect Transistor ◽

Double Gate ◽

Effect Transistor ◽

Tunnel Field Effect Transistor ◽

Level Performance

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A self-aligned, electrically separable double-gate mos transistor technology for dynamic threshold voltage application

IEEE Transactions on Electron Devices ◽

10.1109/ted.2003.818598 ◽

2003 ◽

Vol 50 (11) ◽

pp. 2297-2300 ◽

Cited By ~ 13

Author(s):

Shengdong Zhang ◽

Xinnan Lin ◽

Ru Huang ◽

Ruqi Han ◽

Mansun Chan

Keyword(s):

Threshold Voltage ◽

Dynamic Threshold ◽

Double Gate ◽

Mos Transistor ◽

Voltage Application

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