Effects of gate electrode work function on electrical characteristics of pentacene-based field-effect devices

2010 ◽  
Vol 97 (9) ◽  
pp. 093301 ◽  
Author(s):  
Jaehoon Park ◽  
Hey Min Kim ◽  
Dong Wook Kim ◽  
Jong Sun Choi
Keyword(s):  
Work Function ◽  
Field Effect ◽  
Electrical Characteristics ◽  
Gate Electrode ◽  
Field Effect Devices

Impact of granular work function variation in a gate electrode on low-frequency noise for fin field-effect transistors

2015 ◽  
Vol 8 (4) ◽  
pp. 044201 ◽  
Author(s):  
Takashi Matsukawa ◽  
Koichi Fukuda ◽  
Yongxun Liu ◽  
Junichi Tsukada ◽  
Hiromi Yamauchi ◽  
...  
Keyword(s):  
Work Function ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Gate Electrode

Structural Modification of Doped Tunnel Field Effect Transistor for Enhanced Conduction Current and Lower Subthreshold Swing

2019 ◽  
Vol 14 (11) ◽  
pp. 1539-1547
Author(s):  
Deepak Soni ◽  
Amit Kumar Behera ◽  
Dheeraj Sharma ◽  
Dip Prakash Samajdar ◽  
Dharmendra Singh Yadav
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Layer ◽  
Source Region ◽  
Subthreshold Swing ◽  
Electrical Characteristics ◽  
Gate Electrode ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
Rf Performance

The material solubility in the source region and abrupt source/channel junction profile are the major concern which is responsible for the improvement of the electrical characteristics of conventional physical doped tunnel field effect transistor (PD-TFET). For this, an additional negatively polarised electrode is mounted in P+ (source) – N (channel) – N+ (drain) structure over the source region to overcome material solubility. This improves the electrical characteristics of the device. Along with this, we have implanted a low workfunction metal layer (ML) in the oxide layer under the gate electrode for creating more abruptness at the junction to improve the subthreshold swing (SS) of the device. Thus, the proposed concept improves the DC/RF performance of the doped TFET device. Further to this, the optimization of metal layer workfunction and misalignment of metal layer in TFET have been performed to get optimum device characteristics. In addition to this, for the suppression of ambipolar behaviour, gate electrode is shorted from the drain side. Due to short length of gate electrode tunneling barrier width at the drain/channel junction increases, hence the tunneling probability decreases which reduces the ambipolar current to parasitic current. Shortening of gate electrode also improves the RF performance.

Inhomogeneous work-function hysteresis in chemical vapor deposition-grown graphene field-effect devices

Carbon ◽  
2021 ◽  
Vol 173 ◽  
pp. 594-599
Author(s):  
Hwi Je Woo ◽  
Seongchan Kim ◽  
Young-Jin Choi ◽  
Jeong Ho Cho ◽  
Seong Heon Kim ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Work Function ◽  
Vapor Deposition ◽  
Field Effect ◽  
Chemical Vapor ◽  
Field Effect Devices ◽  
Grown Graphene

scholarly journals Gallium Arsenide as a Competitor to Silicon for High-speed Amplification and Switching

1982 ◽  
Vol 35 (6) ◽  
pp. 749
Author(s):  
PH Ladbrooke ◽  
DR Debuf ◽  
K Nanayakkara ◽  
DR Wilkins
Keyword(s):  
Field Effect ◽  
High Speed ◽  
Field Effect Transistors ◽  
Electrical Characteristics ◽  
Electrical Behaviour ◽  
Technological Factors ◽  
Ballistic Electron ◽  
Ballistic Electron Transport ◽  
Field Effect Devices ◽  
Transport Effects

A review is given of the physical and technological factors which affect the electrical behaviour of field-effect devices for high-speed applications. Ballistic electron transport is shown to lead to an electron transit time under the gate electrode which is shorter in GaAs than in Si field-effect transistors (FETs), providing a possible basis for exploitation of transport effects in high-speed devices. Some electrical characteristics of practical Si and GaAs field-effect structures are presented.

Analysis of the thickness-dependent electrical characteristics in pentacene field-effect devices

2014 ◽  
Vol 65 (1) ◽  
pp. 87-91
Author(s):  
Dongwook Kim ◽  
Hyunji Shin ◽  
Jong Sun Choi ◽  
Xue Zhang ◽  
Ji-Ho Park ◽  
...  
Keyword(s):  
Field Effect ◽  
Electrical Characteristics ◽  
Field Effect Devices

scholarly journals Effect of Gate Electrode Work-Function on Source Charge Injection in Electrolyte-Gated Organic Field-Effect Transistors

2013 ◽  
Vol 24 (5) ◽  
pp. 695-700 ◽  
Author(s):  
Simone Fabiano ◽  
Slawomir Braun ◽  
Mats Fahlman ◽  
Xavier Crispin ◽  
Magnus Berggren
Keyword(s):  
Work Function ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Charge Injection ◽  
Organic Field Effect Transistors ◽  
Gate Electrode

scholarly journals Modification of the gate electrode by self-assembled monolayers in flexible electrolyte-gated organic field effect transistors: work function vs. capacitance effects

RSC Advances ◽  
2018 ◽  
Vol 8 (48) ◽  
pp. 27509-27515 ◽  
Author(s):  
Francesca Leonardi ◽  
Adrián Tamayo ◽  
Stefano Casalini ◽  
Marta Mas-Torrent
Keyword(s):  
Work Function ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Performance ◽  
Self Assembled Monolayers ◽  
Organic Field Effect Transistors ◽  
Gate Electrode ◽  
Assembled Monolayers ◽  
Self Assembled ◽  
Capacitance Effects

The functionalisation of the gate electrode in electrolyte-gated field effect transistors (EGOFETs) with self-assembled monolayers effect the device electrical performance mainly due to the induced capacitance changes.

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