Application of an ultrafast photonic technique to study polarization switching dynamics of thin-film ferroelectric capacitors

2003 ◽  
Vol 21 (12) ◽  
pp. 3282-3291 ◽  
Author(s):  
J. Li ◽  
H. Liang ◽  
B. Nagaraj ◽  
W. Cao ◽  
C.H. Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Polarization Switching ◽  
Switching Dynamics ◽  
Ferroelectric Capacitors

scholarly journals Direct studies of domain switching dynamics in thin film ferroelectric capacitors

2005 ◽  
Vol 87 (8) ◽  
pp. 082902 ◽  
Author(s):  
A. Gruverman ◽  
B. J. Rodriguez ◽  
C. Dehoff ◽  
J. D. Waldrep ◽  
A. I. Kingon ◽  
...  
Keyword(s):  
Thin Film ◽  
Domain Switching ◽  
Switching Dynamics ◽  
Ferroelectric Capacitors

scholarly journals Positive-to-negative subthreshold swing of a MOSFET tuned by the ferroelectric switching dynamics of BiFeO3

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Chuanchuan Liu ◽  
Yuchen Wang ◽  
Haoyang Sun ◽  
Chao Ma ◽  
Zhen Luo ◽  
...  
Keyword(s):  
Field Effect Transistors ◽  
Drain Current ◽  
Polarization Switching ◽  
Subthreshold Swing ◽  
Oxide Semiconductor ◽  
Ferroelectric Capacitor ◽  
Voltage Drops ◽  
Switching Dynamics ◽  
Ferroelectric Capacitors ◽  
Ferroelectric Switching

AbstractFerroelectricity can reduce the subthreshold swing (SS) of metal-oxide-semiconductor field-effect transistors (MOSFETs) to below the room-temperature Boltzmann limit of ~60 mV/dec and provides an important strategy to achieve a steeper SS. Surprisingly, by carefully tuning the polarization switching dynamics of BiFeO3 ferroelectric capacitors the SS of a commercial power MOSFET can even be tuned to zero or a negative value, i.e., the drain current increases with a constant or decreasing gate voltage. In particular, in addition to the positive SS of lower than 60 mV/dec, the zero and negative SS can be established with a drain current spanning for over seven orders of magnitude. These intriguing phenomena are explained by the ferroelectric polarization switching dynamics, which change the charge redistributions and accordingly affect the voltage drops across the ferroelectric capacitor and MOSFET. This study provides deep insights into understanding the steep SS in ferroelectric MOSFETs, which could be promising for designing advanced MOSFETs with an ultralow and tunable SS.

Universality of Polarization Switching Dynamics in Ferroelectric Capacitors Revealed by 5D Piezoresponse Force Microscopy

2013 ◽  
Vol 23 (32) ◽  
pp. 3971-3979 ◽  
Author(s):  
Yunseok Kim ◽  
Xiaoli Lu ◽  
Stephen Jesse ◽  
Dietrich Hesse ◽  
Marin Alexe ◽  
...  
Keyword(s):  
Piezoresponse Force Microscopy ◽  
Polarization Switching ◽  
Force Microscopy ◽  
Switching Dynamics ◽  
Ferroelectric Capacitors

Built-in voltages and asymmetric polarization switching in Pb(Zr,Ti)O3 thin film capacitors

1998 ◽  
Vol 72 (25) ◽  
pp. 3380-3382 ◽  
Author(s):  
J. Lee ◽  
C. H. Choi ◽  
B. H. Park ◽  
T. W. Noh ◽  
J. K. Lee
Keyword(s):  
Thin Film ◽  
Polarization Switching ◽  
Thin Film Capacitors

Structural dynamics of PZT thin films at the nanoscale

2005 ◽  
Vol 902 ◽  
Author(s):  
Alexei Grigoriev ◽  
Dal-Hyun Do ◽  
Dong Min Kim ◽  
Chang-Beom Eom ◽  
Bernhard Adams ◽  
...  
Keyword(s):  
Crystal Lattice ◽  
Lattice Distortion ◽  
Piezoelectric Effect ◽  
Polarization Switching ◽  
X Rays ◽  
Time Resolved ◽  
X Ray ◽  
Converse Piezoelectric Effect ◽  
Ferroelectric Capacitors ◽  
Crystal Lattice Distortion

AbstractWhen an electric field is applied to a ferroelectric the crystal lattice spacing changes as a result of the converse piezoelectric effect. Although the piezoelectric effect and polarization switching have been investigated for decades there has been no direct nanosecond-scale visualization of these phenomena in solid crystalline ferroelectrics. Synchrotron x-rays allow the polarization switching and the crystal lattice distortion to be visualized in space and time on scales of hundreds of nanometers and hundreds of picoseconds using ultrafast x-ray microdiffraction. Here we report the polarization switching visualization and polarization domain wall velocities for Pb(Zr0.45Ti0.55)O3 thin film ferroelectric capacitors studied by time-resolved x-ray microdiffraction.

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