scholarly journals Direct studies of domain switching dynamics in thin film ferroelectric capacitors

2005 ◽  
Vol 87 (8) ◽  
pp. 082902 ◽  
Author(s):  
A. Gruverman ◽  
B. J. Rodriguez ◽  
C. Dehoff ◽  
J. D. Waldrep ◽  
A. I. Kingon ◽  
...  
Keyword(s):  
Thin Film ◽  
Domain Switching ◽  
Switching Dynamics ◽  
Ferroelectric Capacitors

scholarly journals Atomic force microscopy-based experimental setup for studying domain switching dynamics in ferroelectric capacitors

2005 ◽  
Vol 76 (2) ◽  
pp. 023708 ◽  
Author(s):  
C. Dehoff ◽  
B. J. Rodriguez ◽  
A. I. Kingon ◽  
R. J. Nemanich ◽  
A. Gruverman ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Domain Switching ◽  
Experimental Setup ◽  
Force Microscopy ◽  
Atomic Force ◽  
Switching Dynamics ◽  
Ferroelectric Capacitors

scholarly journals Monte Carlo Simulation of Switching Dynamics in Polycrystalline Ferroelectric Capacitors

2019 ◽  
Vol 66 (8) ◽  
pp. 3527-3534 ◽  
Author(s):  
Cristobal Alessandri ◽  
Pratyush Pandey ◽  
Angel Abusleme ◽  
Alan Seabaugh
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Switching Dynamics ◽  
Ferroelectric Capacitors

Effect of Interfaces on the Properties of Polycrystalline Thin-Film PZT Ferroelectric Capacitors

2006 ◽  
Vol 966 ◽  
Author(s):  
Lyuba A. Delimova ◽  
Igor Grekhov ◽  
Dmitri Mashovets ◽  
Ilya Titkov ◽  
Valentin Afanasjev ◽  
...  
Keyword(s):  
Thin Film ◽  
Grain Boundaries ◽  
Heterogeneous Medium ◽  
Photovoltaic Effect ◽  
Short Circuit ◽  
Charge Carriers ◽  
Polycrystalline Thin Film ◽  
Field Interaction ◽  
Polarization Charge ◽  
Ferroelectric Capacitors

ABSTRACTA photocurrent directed opposite to ferroelectric (FE) polarization is observed in short-circuit thin-film polycrystalline Pt/PZT/Ir structures. The direction and magnitude of photocurrent are defined by the sign and magnitude of the FE polarization. A model based on a photovoltaic effect with characteristics determined by polarization of PZT grains is proposed. The model considers the field interaction of FE polarization charge with the charge carriers in intergranular PbO channel. Thin-film FE capacitor is considered as a photosensitive heterogeneous medium, where the conduction of PbO channels along PZT grain boundaries is controlled by FE polarization.

Stresses in Pt/Pb(Zr,Ti)O3/Pt thin‐film stacks for integrated ferroelectric capacitors

1995 ◽  
Vol 78 (3) ◽  
pp. 1926-1933 ◽  
Author(s):  
G. A. C. M. Spierings ◽  
G. J. M. Dormans ◽  
W. G. J. Moors ◽  
M. J. E. Ulenaers ◽  
P. K. Larsen
Keyword(s):  
Thin Film ◽  
Ferroelectric Capacitors

Total-dose radiation-induced degradation of thin film ferroelectric capacitors

1990 ◽  
Vol 37 (6) ◽  
pp. 1703-1712 ◽  
Author(s):  
J.R. Schwank ◽  
R.D. Nasby ◽  
S.L. Miller ◽  
M.S. Rodgers ◽  
P.V. Dressendorfer
Keyword(s):  
Thin Film ◽  
Total Dose ◽  
Radiation Induced ◽  
Ferroelectric Capacitors ◽  
Dose Radiation
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