Built-in voltages and asymmetric polarization switching in Pb(Zr,Ti)O3 thin film capacitors

J. Lee; C. H. Choi; B. H. Park; T. W. Noh; J. K. Lee

doi:10.1063/1.121610

Built-in voltages and asymmetric polarization switching in Pb(Zr,Ti)O3 thin film capacitors

Applied Physics Letters ◽

10.1063/1.121610 ◽

1998 ◽

Vol 72 (25) ◽

pp. 3380-3382 ◽

Cited By ~ 95

Author(s):

J. Lee ◽

C. H. Choi ◽

B. H. Park ◽

T. W. Noh ◽

J. K. Lee

Keyword(s):

Thin Film ◽

Polarization Switching ◽

Thin Film Capacitors

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Polarization Switching Behaviors in Multiferroic BiFeO3(001) Thin Film Capacitors under In-Plane Magnetic Field

Journal of the Korean Physical Society ◽

10.3938/jkps.56.503 ◽

2010 ◽

Vol 56 (1(2)) ◽

pp. 503-507 ◽

Cited By ~ 3

Author(s):

Tae Kwon Song ◽

J. Y. Jo ◽

S. M. Yang ◽

D. H. Kim ◽

S. Park ◽

...

Keyword(s):

Magnetic Field ◽

Thin Film ◽

Polarization Switching ◽

Thin Film Capacitors ◽

Multiferroic Bifeo3

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High resolution study of domain nucleation and growth during polarization switching in Pb(Zr,Ti)O3 ferroelectric thin film capacitors

Journal of Applied Physics ◽

10.1063/1.370774 ◽

1999 ◽

Vol 86 (1) ◽

pp. 607-613 ◽

Cited By ~ 121

Author(s):

Seungbum Hong ◽

E. L. Colla ◽

Eunah Kim ◽

D. V. Taylor ◽

A. K. Tagantsev ◽

...

Keyword(s):

Thin Film ◽

High Resolution ◽

Ferroelectric Thin Film ◽

Polarization Switching ◽

Nucleation And Growth ◽

Thin Film Capacitors ◽

Resolution Study

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Polarization Switching Behaviour of Metallo-Organic Decomposition Processed (Pb0.60Ca0.40)TiO3 Thin Film Capacitors

Integrated Ferroelectrics ◽

10.1080/10584587.2010.495669 ◽

2010 ◽

Vol 121 (1) ◽

pp. 36-45 ◽

Cited By ~ 2

Author(s):

N. S. Negi ◽

A. C. Rastogi

Keyword(s):

Thin Film ◽

Polarization Switching ◽

Tio3 Thin Film ◽

Switching Behaviour ◽

Thin Film Capacitors ◽

Organic Decomposition

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Evidence for forward domain growth being rate-limiting step in polarization switching in 〈111〉-oriented-Pb(Zr0.45Ti0.55)O3 thin-film capacitors

Applied Physics Letters ◽

10.1063/1.1517396 ◽

2002 ◽

Vol 81 (18) ◽

pp. 3437-3439 ◽

Cited By ~ 24

Author(s):

Seungbum Hong ◽

Nava Setter

Keyword(s):

Thin Film ◽

Polarization Switching ◽

Domain Growth ◽

Rate Limiting Step ◽

Limiting Step ◽

Thin Film Capacitors ◽

Rate Limiting

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Nanoscale studies of defect-mediated polarization switching dynamics in ferroelectric thin film capacitors

Current Applied Physics ◽

10.1016/j.cap.2011.05.017 ◽

2011 ◽

Vol 11 (5) ◽

pp. 1111-1125 ◽

Cited By ~ 46

Author(s):

Sang Mo Yang ◽

Jong-Gul Yoon ◽

Tae Won Noh

Keyword(s):

Thin Film ◽

Ferroelectric Thin Film ◽

Polarization Switching ◽

Thin Film Capacitors ◽

Switching Dynamics

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Asymmetric properties of Pb(Zr,Ti)O3 thin film capacitors with conducting oxides

Journal de Physique IV (Proceedings) ◽

10.1051/jp4:1998918 ◽

1998 ◽

Vol 08 (PR9) ◽

pp. Pr9-109-Pr9-112 ◽

Cited By ~ 3

Author(s):

C. H. Choi ◽

J. Lee

Keyword(s):

Thin Film ◽

Conducting Oxides ◽

Thin Film Capacitors

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Large domain-wall currents in epitaxial Au/BiFeO3/SrRuO3 thin-film capacitors with modulated oxygen vacancy and wall densities

Ceramics International ◽

10.1016/j.ceramint.2021.04.293 ◽

2021 ◽

Author(s):

Qiqi Peng ◽

Xu Jiang ◽

Yifan Chen ◽

Wei Zhang ◽

Jun Jiang ◽

...

Keyword(s):

Thin Film ◽

Oxygen Vacancy ◽

Domain Wall ◽

Large Domain ◽

Thin Film Capacitors ◽

Srruo3 Thin Film

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A new GaAs MMIC process technology using 0.5 mu m gate asymmetric LDD structure GaAs BP-MESFETs combined with high-dielectric-constant thin-film capacitors

Semiconductor Science and Technology ◽

10.1088/0268-1242/10/11/017 ◽

1995 ◽

Vol 10 (11) ◽

pp. 1534-1540 ◽

Cited By ~ 7

Author(s):

M Nishitsuji ◽

T Uda ◽

T Yokoyama ◽

K Fujimoto ◽

K Nishii ◽

...

Keyword(s):

Thin Film ◽

Dielectric Constant ◽

High Dielectric Constant ◽

Process Technology ◽

Thin Film Capacitors ◽

High Dielectric

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TUNABLE MICROWAVE INTEGRATED CIRCUITS USING BST THIN FILM CAPACITORS WITH DEVICE STRUCTURE OPTIMIZATION

Integrated Ferroelectrics ◽

10.1080/10584580500413681 ◽

2005 ◽

Vol 77 (1) ◽

pp. 27-35 ◽

Cited By ~ 12

Author(s):

HONGTAO XU ◽

NADIA K. PERVEZ ◽

ROBERT A. YORK

Keyword(s):

Thin Film ◽

Integrated Circuits ◽

Structure Optimization ◽

Device Structure ◽

Microwave Integrated Circuits ◽

Thin Film Capacitors ◽

Tunable Microwave ◽

Bst Thin Film

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Simultaneous switching noise suppression using hydrothermal barium titanate thin film capacitors

2004 Proceedings. 54th Electronic Components and Technology Conference (IEEE Cat. No.04CH37546) ◽

10.1109/ectc.2004.1319352 ◽

2004 ◽

Cited By ~ 3

Author(s):

D. Balaraman ◽

Jinwoo Choi ◽

V. Patel ◽

P.M. Raj ◽

I.R. Abothu ◽

...

Keyword(s):

Thin Film ◽

Barium Titanate ◽

Noise Suppression ◽

Switching Noise ◽

Thin Film Capacitors ◽

Simultaneous Switching Noise ◽

Simultaneous Switching ◽

Barium Titanate Thin Film ◽

Titanate Thin Film

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