Preliminary Study of the Breakdown Strength of TiN/HfO2/SiO2/Si MOS Gate Stacks

2006 ◽  
Author(s):  
Richard Southwick ◽  
Mark Elgin ◽  
Gennadi Bersuker ◽  
Rino Choi ◽  
William Knowlton
Keyword(s):  
Breakdown Strength ◽  
Gate Stacks ◽  
Preliminary Study ◽  
Mos Gate

Charge trapping and degradation of HfO/sub 2//SiO/sub 2/ MOS gate stacks observed with enhanced CAFM

2006 ◽  
Vol 27 (3) ◽  
pp. 157-159 ◽  
Author(s):  
L. Aguilera ◽  
M. Porti ◽  
M. Nafria ◽  
X. Aymerich
Keyword(s):  
Charge Trapping ◽  
Gate Stacks ◽  
Mos Gate

A New Quality Metric for III–V/High-k MOS Gate Stacks Based on the Frequency Dispersion of Accumulation Capacitance and the CET

2017 ◽  
Vol 38 (3) ◽  
pp. 318-321 ◽  
Author(s):  
Abhitosh Vais ◽  
Jacopo Franco ◽  
Koen Martens ◽  
Dennis Lin ◽  
Sonja Sioncke ◽  
...  
Keyword(s):  
Frequency Dispersion ◽  
Gate Stacks ◽  
Quality Metric ◽  
High K ◽  
Mos Gate

Physical and electrical characterizations of AlGaN/GaN MOS gate stacks with AlGaN surface oxidation treatment

2018 ◽  
Vol 57 (6S3) ◽  
pp. 06KA07
Author(s):  
Takahiro Yamada ◽  
Kenta Watanabe ◽  
Mikito Nozaki ◽  
Hong-An Shih ◽  
Satoshi Nakazawa ◽  
...  
Keyword(s):  
Surface Oxidation ◽  
Gate Stacks ◽  
Oxidation Treatment ◽  
Electrical Characterizations ◽  
Mos Gate

Automatic statistical full quantum analysis of C-V and I-V characteristics for advanced MOS gate stacks

2007 ◽  
Vol 84 (9-10) ◽  
pp. 2408-2411 ◽  
Author(s):  
C. Leroux ◽  
F. Allain ◽  
A. Toffoli ◽  
G. Ghibaudo ◽  
G. Reimbold
Keyword(s):  
Gate Stacks ◽  
Quantum Analysis ◽  
Mos Gate ◽  
Full Quantum

scholarly journals Hf-based high-k dielectrics for p-Ge MOS gate stacks

2014 ◽  
Vol 32 (3) ◽  
pp. 03D105 ◽  
Author(s):  
Sivan Fadida ◽  
Felix Palumbo ◽  
Laura Nyns ◽  
Dennis Lin ◽  
Sven Van Elshocht ◽  
...  
Keyword(s):  
Gate Stacks ◽  
High K ◽  
Mos Gate

Anomalous positive Vfb shift in HfAlOx MOS gate stacks

2007 ◽  
Author(s):  
Wenwu Wang ◽  
Koji Akiyama ◽  
Wataru Mizubayashi ◽  
Minoru Ikeda ◽  
Hiroyuki Ota ◽  
...  
Keyword(s):  
Gate Stacks ◽  
Mos Gate

Pre- and post-BD electrical conduction of stressed HfO2/SiO2 MOS gate stacks observed at the nanoscale

2005 ◽  
Vol 45 (9-11) ◽  
pp. 1390-1393 ◽  
Author(s):  
L. Aguilera ◽  
M. Porti ◽  
M. Nafría ◽  
X. Aymerich
Keyword(s):  
Electrical Conduction ◽  
Gate Stacks ◽  
Mos Gate

scholarly journals Extensive assessment of the charge-trapping kinetics in InGaAs MOS gate-stacks for the demonstration of improved BTI reliability

2020 ◽  
Vol 115 ◽  
pp. 113996
Author(s):  
Vamsi Putcha ◽  
Jacopo Franco ◽  
Abhitosh Vais ◽  
Ben Kaczer ◽  
Qi Xie ◽  
...  
Keyword(s):  
Charge Trapping ◽  
Gate Stacks ◽  
Mos Gate
Sign in / Sign up

Export Citation Format

Share Document