Defect Density Reduction of Thin SiO2 MOSFET through Oxidation Pre-cleaning improvement – a Fast Wafer Level Reliability Monitoring

2019 ◽  
Author(s):  
M. H. Kamaruddin ◽  
N. Soin ◽  
C. Veriven ◽  
C.M. How ◽  
C.K. Ang
Keyword(s):  
Defect Density ◽  
Wafer Level ◽  
Density Reduction ◽  
Reliability Monitoring

Defect density reduction in InAs/GaSb type II superlattice focal plane array infrared detectors

2011 ◽  
Author(s):  
Martin Walther ◽  
Robert Rehm ◽  
Johannes Schmitz ◽  
Jasmin Niemasz ◽  
Frank Rutz ◽  
...  
Keyword(s):  
Focal Plane ◽  
Infrared Detectors ◽  
Defect Density ◽  
Focal Plane Array ◽  
Type Ii ◽  
Type Ii Superlattice ◽  
Density Reduction

Fast wafer level reliability monitoring as a tool to achieve automotive quality for a wafer process

2016 ◽  
Vol 64 ◽  
pp. 2-12 ◽  
Author(s):  
A. Martin ◽  
R.-P. Vollertsen ◽  
A. Mitchell ◽  
M. Traving ◽  
D. Beckmeier ◽  
...  
Keyword(s):  
Wafer Level ◽  
Reliability Monitoring

SiC Defect Density Reduction by Epitaxy on Porous Surfaces

2001 ◽  
Vol 353-356 ◽  
pp. 115-118 ◽  
Author(s):  
Stephen E. Saddow ◽  
Marina G. Mynbaeva ◽  
Wolfgang J. Choyke ◽  
Robert P. Devaty ◽  
Song Bai ◽  
...  
Keyword(s):  
Defect Density ◽  
Density Reduction ◽  
Porous Surfaces

Defect Pair Formation by Implantation-Induced Stresses in High-Dose Oxygen Implanted Silicon-on-Insulator Material

1993 ◽  
Vol 316 ◽  
Author(s):  
J.D. Lee ◽  
J.C. Park ◽  
D. Venables ◽  
S.J. Krause ◽  
P. Roitman
Keyword(s):  
Defect Density ◽  
Silicon On Insulator ◽  
Surface Strain ◽  
High Dose ◽  
X Ray Diffraction ◽  
Near Surface ◽  
X Ray ◽  
Density Reduction ◽  
Transmission Electron ◽  
Pair Density

ABSTRACTDefect microstructure and the near-surface strain of high-dose oxygen implanted silicon-on-insulator material (SIMOX) were investigated as a function of dose, implant temperature, and annealing temperature by transmission electron microscopy and high resolution x-ray diffraction. Dislocation half loops (DHLs) begin to form by stress assisted climb at a critical stress level due to implantation-induced damage. DHLs evolve into through-thickness defect (TTD) pairs by expansion during annealing. Both DHL and TTD-pair density increase with higher implant dose and lower implant temperature. Possible methods for defect density reduction are suggested based on the results of this study.

Ion Beam Modification of Cluster-Covered Silicon Surfaces

1996 ◽  
Vol 439 ◽  
Author(s):  
O. V. Gulko ◽  
M. T. Zinke-Allmang
Keyword(s):  
Crystalline Silicon ◽  
Defect Density ◽  
Ion Beam ◽  
High Vacuum ◽  
Finite Size ◽  
Areal Density ◽  
Ultra High Vacuum ◽  
Heteroepitaxial Growth ◽  
Ion Beam Modification ◽  
Density Reduction

AbstractClusters of independently tailored areal density and size distribution were grown on semiconductor surfaces in ultra-high vacuum and used as masks for selective ion beam modification. First studies were undertaken to characterize the vertical interface between areas exposed to low energy ion beams and areas covered by clusters (crystalline silicon). Selective etching was employed to create a patterned surface as a substrate for heteroepitaxial growth of thick Ge layers to test defect density reduction due to finite size growth areas. The quality of the overlayers is discussed.

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