Cu wire bonding process induced fail mechanism — Inter Layer Dielectric Crack

2015 ◽  
Author(s):  
Feng-Min Chang ◽  
Nicolas Liu ◽  
Kevin Liu
Keyword(s):  
Wire Bonding ◽  
Bonding Process ◽  
Dielectric Crack

Failure Analysis on Power Trench MOSFET Devices with Copper Wire Bonds

2011 ◽  
Author(s):  
Huixian Wu ◽  
Arthur Chiang ◽  
David Le ◽  
Win Pratchayakun
Keyword(s):  
Failure Analysis ◽  
Copper Wire ◽  
New Technology ◽  
Analytical Techniques ◽  
Wire Bonding ◽  
Bonding Process ◽  
Wire Bonds ◽  
Copper Wire Bonding ◽  
Wet Chemical ◽  
Microelectronic Components

Abstract With gold prices steadily going up in recent years, copper wire has gained popularity as a means to reduce cost of manufacturing microelectronic components. Performance tradeoff aside, there is an urgent need to thoroughly study the new technology to allay any fear of reliability compromise. Evaluation and optimization of copper wire bonding process is critical. In this paper, novel failure analysis and analytical techniques are applied to the evaluation of copper wire bonding process. Several FA/analytical techniques and FA procedures will be discussed in detail, including novel laser/chemical/plasma decapsulation, FIB, wet chemical etching, reactive ion etching (RIE), cross-section, CSAM, SEM, EDS, and a combination of these techniques. Two case studies will be given to demonstrate the use of these techniques in copper wire bonded devices.

scholarly journals Optimal Parameter Design for IC Wire Bonding Process by Using Fuzzy Logic and Taguchi Method

IEEE Access ◽  
2016 ◽  
Vol 4 ◽  
pp. 3034-3045 ◽  
Author(s):  
Jinn-Tsong Tsai ◽  
Cheng-Chung Chang ◽  
Wen-Ping Chen ◽  
Jyh-Horng Chou
Keyword(s):  
Fuzzy Logic ◽  
Taguchi Method ◽  
Optimal Parameter ◽  
Wire Bonding ◽  
Bonding Process ◽  
Parameter Design

Manufacturability readiness of insulated Cu wire bonding process in PBGA package

2014 ◽  
Author(s):  
Leong HungYang ◽  
Yap BoonKar ◽  
Tan Chou Yong ◽  
Navas Khan ◽  
Mohd Rusli Ibrahim ◽  
...  
Keyword(s):  
Wire Bonding ◽  
Bonding Process

scholarly journals Simulation of Wire Bonding Process Using Explicit Fem with Ale Remeshing Technology

2019 ◽  
Vol 36 (1) ◽  
pp. 47-54
Author(s):  
C. C. Yang ◽  
Y. F. Su ◽  
Steven Y. Liang ◽  
K. N. Chiang
Keyword(s):  
Time Integration ◽  
Wire Bonding ◽  
Bonding Process ◽  
Integration Scheme ◽  
Arbitrary Lagrangian Eulerian ◽  
Cracking Behavior ◽  
Free Air ◽  
Time Integration Scheme ◽  
Time Marching ◽  
The Wire

ABSTRACTThermosonic wire bonding is a common fabrication process for connecting devices in electronic packaging. However, when the free air ball (FAB) is compressed onto the I/O pad of the chip during bonding procedure, chip cracking may occur if the contact pressure is too large. This study proposes an effective simulation technique that can predict the wire ball geometry after bonding in an accurate range. The contact force obtained in the simulation can be used for possible die cracking behavior evaluation. The simulation in this study used the explicit time integration scheme to deal with the time marching problem, and the second-order precision arbitrary Lagrangian-Eulerian (ALE) algorithm was used to deal with the large deformation of the wire ball during the bonding process. In addition, the equilibrium smoothing algorithm in LS-DYNA can make the contact behavior and geometry of the bonding wire almost the same as the experiment, which can also significantly reduce the distortion of the mesh geometry after remeshing.

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