EC-SEG: Electronic Component Segmentation for PCB Assurance and Counterfeit Avoidance

PCB Assurance currently relies on manual physical inspection, which is time consuming, expensive and prone to error. In this study, we propose a novel automated segmentation algorithm to detect and isolate PCB components from the boards called EC-Seg. Segmentation and component localization is a vital preprocessing step in component identification, component authentication, as well as in detecting logos and text markings in components. EC-Seg is an efficient method to automate Quality assurance tool-chains and also to aid Bill of Material Extraction in PCBs. Finally, EC-Seg can be used as a Region proposal algorithm for object detection networks to detect and classify microelectronic components, and also to perform sensor fusion with X-Rays to aid in artifact removal in PCB X-Ray tomography. Index Terms—PCB Hardware Assurance, Component Segmentation, Component detection, AutoBoM, Physical Inspection, Visual inspection, Counterfeit detection

Review on the Integration of Microelectronics for E-Textile

Modern electronic textiles are moving towards flexible wearable textiles, so-called e-textiles that have micro-electronic elements embedded onto the textile fabric that can be used for varied classes of functionalities. There are different methods of integrating rigid microelectronic components into/onto textiles for the development of smart textiles, which include, but are not limited to, physical, mechanical, and chemical approaches. The integration systems must satisfy being flexible, lightweight, stretchable, and washable to offer a superior usability, comfortability, and non-intrusiveness. Furthermore, the resulting wearable garment needs to be breathable. In this review work, three levels of integration of the microelectronics into/onto the textile structures are discussed, the textile-adapted, the textile-integrated, and the textile-based integration. The textile-integrated and the textile-adapted e-textiles have failed to efficiently meet being flexible and washable. To overcome the above problems, researchers studied the integration of microelectronics into/onto textile at fiber or yarn level applying various mechanisms. Hence, a new method of integration, textile-based, has risen to the challenge due to the flexibility and washability advantages of the ultimate product. In general, the aim of this review is to provide a complete overview of the different interconnection methods of electronic components into/onto textile substrate.

Review on the Integration of Microelectronics for E-Textile

Modern electronic textiles are moving towards flexible wearable textiles, so-called e-textiles that have micro-electronic elements embedded onto the textile fabric that can be used for varied classes of functionalities. There are different methods of integrating rigid microelectronic components into/onto textiles for the development of smart textiles, which include, but are not limited to, physical, mechanical and chemical approaches. The integration systems must satisfy being flexible, lightweight, stretchable and washable to offer a superior usability, comfortability and non-intrusiveness. Furthermore, the resulting wearable garment needs to be breathable. In this review work, three levels of integration of the microelectronics into/onto the textile structures are discussed, the textile-adapted, the textile-integrated, and the textile-based integration. The textile-integrated and the textile- adapted e-textiles have failed to efficiently meet being flexible and washable. To overcome the above problems, researchers studied the integration of microelectronics into/onto textile at fiber or yarn level applying various mechanisms. Hence, a new method of integration, textile-based, has risen to the challenge due to the flexibility and washability advantages of the ultimate product. In general, the aim of this review is to provide a complete overview of the different interconnection methods of electronic components into/onto textile substrate.

Review on the Integration of Microelectronics for E-textile

Modern electronic textiles are moving towards flexible wearable textiles, so-called e-textiles that have micro-electronic elements embedded onto the textile fabric that can be used for varied classes of functionalities. There are different methods of integrating rigid microelectronic components into/onto textiles for the development of smart textiles, which include, but are not limited to, physical, mechanical and chemical approaches. The integration systems must satisfy being flexible, lightweight, stretchable and washable to offer a superior usability, comfortability and non-intrusiveness. Furthermore, the resulting wearable garment needs to be breathable. In this review work, three levels of integration of the microelectronics into/onto the textile structures are discussed, the textile-adapted, the textile-integrated, and the textile-based integration. The textile-integrated and the textile- adapted e-textiles have failed to efficiently meet being flexible and washable. To overcome the above problems, researchers studied the integration of microelectronics into/onto textile at fiber or yarn level applying various mechanisms. Hence, a new method of integration, textile-based, has risen to the challenge due to the flexibility and washability advantages of the ultimate product. In general, the aim of this review is to provide a complete overview of the different interconnection methods of electronic components into/onto textile substrate.

Trusted Control Systems

Nowadays, the problem of ensuring security of systems with a critical mission has become particularly relevant. An increased opportunity for unauthorized exposure on such systems via hardware, software and communication networks is the main reason to discuss this problem. It is confirmed by a plenty of accidents when equipment is out of order by means of malicious embedded elements and viruses. Currently, in the Russian Federation the majority of control systems are based on foreign hardware and software platforms, including strategic enterprises and objects with a critical mission. Herewith, the proportion of foreign microelectronic components in such systems is more than 85 %. The article is devoted to the development of scientific basis and techniques of the assurance assessment to control systems of objects with a critical mission. It was shown, that assurance assessment to a control system is a broader index than its reliability and fault tolerance. Such index must integrate various evidences and approvals, which can be objective, based on physical and mathematical assurance assessment methods, as well as they can be subjective, based on the experts experience. A method of assurance assessment to a control system of objects with a critical mission, based on Shortliffe’s scheme, was proposed in this paper. The Shortliffe’s scheme is used in the theories of fuzzy logic for assurance assessment to a hypothesis on the basis of various evidences and statements. An important advantage of a Shortliffe’s scheme is the set of evidences, which can be broadened and augmented (for instance, on the basis of obtained experience). It allows us to clarify a certainty factor. The assessment methods of truth degree of terminal statements of various types, including those, which require the combination of objective and subjective methods of their truth degree assessment, are proposed. The proposed assurance assessment method for national development and creation standards of control systems of objects with a critical mission allows to significantly increase their functional security.

Thin-Film Transistors for Emerging Neuromorphic Electronics: Fundamentals, Materials, and Pattern Recognition

The main goal of the field of neuromorphic electronics is to develop novel microelectronic components that emulate the memory and computing functionalities of the biological synapse. As a three-terminal device,...

Adhesion Properties of Thin Film Multilayers: Comparison of Nanoindentation and Four-Point-Bending Techniques

In this study, we investigated the adhesion strength of SiO2/SiN/TiW/Cu film stacks on silicon by the use of cross-sectional nanoindentation (CSN) technique. The delamination occurred along the SiN/TiW interface as determined by means of SEM and EDX analysis. The critical energy release rate was determined as a quantitative measure of the adhesion strength by application of analytical models as well as Finite Element Method (FEM). Comparative measurements on samples of the same layer composition using the well-established four-point bending (4PB) technique were performed to validate the results of the CSN measurements. FEM was performed to calculate the loading conditions and stress distribution in the samples. The calculations also allowed separating the contribution of plastic and elastic energy in the metallization layers during delamination testing and thereby estimating the value of the interfacial adhesion energy. The experimental results show the good applicability of both the 4PB and CSN method for determining quantitative values of the fracture toughness of thin-film interfaces found in microelectronic components and indicate a good agreement between the two methods.

Frequency-domain study of nonthermal gigahertz phonons reveals Fano coupling to charge carriers

Telecommunication devices exploit hypersonic gigahertz acoustic phonons to mediate signal processing with microwave radiation, and charge carriers to operate various microelectronic components. Potential interactions of hypersound with charge carriers can be revealed through frequency- and momentum-resolved studies of acoustic phonons in photoexcited semiconductors. Here, we present an all-optical method for excitation and frequency-, momentum-, and space-resolved detection of gigahertz acoustic waves in a spatially confined model semiconductor. Lamb waves are excited in a bare silicon membrane using femtosecond optical pulses and detected with frequency-domain micro-Brillouin light spectroscopy. The population of photoexcited gigahertz phonons displays a hundredfold enhancement as compared with thermal equilibrium. The phonon spectra reveal Stokes–anti-Stokes asymmetry due to propagation, and strongly asymmetric Fano resonances due to coupling between the electron-hole plasma and the photoexcited phonons. This work lays the foundation for studying hypersonic signals in nonequilibrium conditions and, more generally, phonon-dependent phenomena in photoexcited nanostructures.