A novel optical structure of numerical aperture increasing lens (NAIL) for resolution improvement in backside failure analysis

2013 ◽  
Author(s):  
Li Tian ◽  
Kuibo Lan ◽  
Gaojie Wen ◽  
Miao Wu ◽  
Chunlei Wu ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Numerical Aperture ◽  
Resolution Improvement ◽  
Optical Structure

scholarly journals Improving Diagnosis Resolution with Population Level Statistical Diagnosis

2021 ◽  
Author(s):  
Kun Young Chung ◽  
Shaun Nicholson ◽  
Soumya Mittal ◽  
Martin Parley ◽  
Gaurav Veda ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Leading Edge ◽  
Population Level ◽  
Technology Node ◽  
Resolution Improvement ◽  
Manufacturing Test ◽  
Yield Learning

Abstract In this paper, we present a diagnosis resolution improvement methodology for scan-based tests. We achieve 89% reduction in the number of suspect diagnosis locations and a 2.4X increase in the number of highly resolved diagnosis results. We suffer a loss in accuracy of 1.5%. These results were obtained from an extensive silicon study. We use data from pilot wafers and 11 other wafers at the leading-edge technology node and check against failure analysis results from 203 cases. This resolution improvement is achieved by considering the diagnosis problem at the level of a population (e.g. a wafer) of failing die instead of analyzing each failing die completely independently as has been done traditionally. Higher diagnosis resolution is critical for speeding up the yield learning from manufacturing test and failure analysis flows.

High Resolution Backside Thermography Using a Numerical Aperture Increasing Lens

2003 ◽  
Author(s):  
S. Thorne ◽  
S. Ippolito ◽  
M. Eraslan ◽  
B. Goldberg ◽  
M.S. Ünlü ◽  
...  
Keyword(s):  
High Resolution ◽  
Integrated Circuits ◽  
Failure Analysis ◽  
Visual Inspection ◽  
Thermal Emission ◽  
Numerical Aperture ◽  
Specific Component ◽  
Feature Size ◽  
Analytical Technique ◽  
Emission Microscopy

Abstract As the feature size in integrated circuits (ICs) become smaller, the techniques we use to localize defects must also progress to the level that they can resolve potential errors. Additionally, because most errors cannot be identified by visual inspection alone, it is necessary to develop techniques, such as thermography, with the capability of localizing failures to the specific component or defect at fault. This paper will review the theory and application of an advanced subsurface (through the substrate) analytical technique for IC failure analysis – solid immersion lens thermal emission microscopy.

Enabling EFA on Single Die

2020 ◽  
Author(s):  
Rudolf Schlangen ◽  
Chen Chih (Ronan) Chien ◽  
Christopher Nemirow ◽  
Eddy Yang ◽  
Jiff Cheng ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Numerical Aperture ◽  
Significant Risk ◽  
Solid Immersion Lens ◽  
Wafer Level ◽  
Electrical Failure ◽  
Silicon Chips ◽  
First Results ◽  
High Bandwidth

Abstract Working on wafer-level has been the only way of performing electrical failure analysis (EFA) without the need for die-packaging. The introduction of Si-interposer based 2.5D packaging, with high bandwidth memory (HBM) stacks surrounding our GPU chip, drastically increasing packaging turn around times from approximately 3 days to 3-4 weeks. Having to wait more than 3 weeks for EFA and debug work of 1st Silicon chips is a significant risk for chip bring-up. To address these challenges, this paper presents different ways of reusing the existing wafer-level EFA tool for single die EFA, and introduces a concept for a novel and dedicated single die tool. Additionally, singulated die fixturing and support windows are designed to enable the usage of a 2.45 Numerical Aperture Solid Immersion Lens, and first results from a near reticle limited 16 nm Fin-FET GPU product are also presented.

Video-Enhanced Microscopy--Better Visibility of Plant Cell Structures

1982 ◽  
Vol 40 ◽  
pp. 182-185
Author(s):  
N.S. Allen ◽  
R.D. Allen
Keyword(s):  
Diffraction Pattern ◽  
Theoretical Basis ◽  
Numerical Aperture ◽  
Gain Control ◽  
Control Unit ◽  
Camera Control ◽  
Variable Gain ◽  
Contrast Method ◽  
Fine Detail ◽  
Cell Structures

Various methods of video-enhanced microscopy combine TV cameras with light microscopes creating images with improved resolution, contrast and visibility of fine detail, which can be recorded rapidly and relatively inexpensively. The AVEC (Allen Video-enhanced Contrast) method avoids polarizing rectifiers, since the microscope is operated at retardations of λ/9- λ/4, where no anomaly is seen in the Airy diffraction pattern. The iris diaphram is opened fully to match the numerical aperture of the condenser to that of the objective. Under these conditions, no image can be realized either by eye or photographically. Yet the image becomes visible using the Hamamatsu C-1000-01 binary camera, if the camera control unit is equipped with variable gain control and an offset knob (which sets a clamp voltage of a D.C. restoration circuit). The theoretical basis for these improvements has been described.

Failure Analysis With the Scanning Electron Microscope

1972 ◽  
Vol 30 ◽  
pp. 482-483
Author(s):  
John R. Devaney
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Integrated Circuits ◽  
Failure Analysis ◽  
High Reliability ◽  
Military Applications ◽  
Small Structure ◽  
Useful Life ◽  
Insight Into ◽  
Scanning Electron

Occasionally in history, an event may occur which has a profound influence on a technology. Such an event occurred when the scanning electron microscope became commercially available to industry in the mid 60's. Semiconductors were being increasingly used in high-reliability space and military applications both because of their small volume but, also, because of their inherent reliability. However, they did fail, both early in life and sometimes in middle or old age. Why they failed and how to prevent failure or prolong “useful life” was a worry which resulted in a blossoming of sophisticated failure analysis laboratories across the country. By 1966, the ability to build small structure integrated circuits was forging well ahead of techniques available to dissect and analyze these same failures. The arrival of the scanning electron microscope gave these analysts a new insight into failure mechanisms.

Using the scanning electron microscope for failure analysis of high density magnetic media

1987 ◽  
Vol 45 ◽  
pp. 392-393
Author(s):  
Evelyn R. Ackerman ◽  
Gary D. Burnett
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Failure Analysis ◽  
High Density ◽  
Magnetic Media ◽  
Specific Data ◽  
Retrieval Systems ◽  
Operating Environments ◽  
The Media ◽  
Scanning Electron

Advancements in state of the art high density Head/Disk retrieval systems has increased the demand for sophisticated failure analysis methods. From 1968 to 1974 the emphasis was on the number of tracks per inch. (TPI) ranging from 100 to 400 as summarized in Table 1. This emphasis shifted with the increase in densities to include the number of bits per inch (BPI). A bit is formed by magnetizing the Fe203 particles of the media in one direction and allowing magnetic heads to recognize specific data patterns. From 1977 to 1986 the tracks per inch increased from 470 to 1400 corresponding to an increase from 6300 to 10,800 bits per inch respectively. Due to the reduction in the bit and track sizes, build and operating environments of systems have become critical factors in media reliability.Using the Ferrofluid pattern developing technique, the scanning electron microscope can be a valuable diagnostic tool in the examination of failure sites on disks.

On resolving fine periodic microstructures in the optical microscope

1989 ◽  
Vol 47 ◽  
pp. 364-365
Author(s):  
W.S. Putnam ◽  
C. Viney
Keyword(s):  
Liquid Crystalline ◽  
Numerical Aperture ◽  
Polarized Light ◽  
Normal Incidence ◽  
Optical Microscope ◽  
Angle Of Incidence ◽  
Resolution Limit ◽  
Crystalline Materials ◽  
Periodic Microstructures ◽  
Liquid Crystalline Materials

Many sheared liquid crystalline materials (fibers, films and moldings) exhibit a fine banded microstructure when observed in the polarized light microscope. In some cases, for example Kevlar® fiber, the periodicity is close to the resolution limit of even the highest numerical aperture objectives. The periodic microstructure reflects a non-uniform alignment of the constituent molecules, and consequently is an indication that the mechanical properties will be less than optimal. Thus it is necessary to obtain quality micrographs for characterization, which in turn requires that fine detail should contribute significantly to image formation.It is textbook knowledge that the resolution achievable with a given microscope objective (numerical aperture NA) and a given wavelength of light (λ) increases as the angle of incidence of light at the specimen surface is increased. Stated in terms of the Abbe resolution criterion, resolution improves from λ/NA to λ/2NA with increasing departure from normal incidence.

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