Static voltage drop and current density analysis for high performance FPGA flip-chip package design

2014 ◽  
Author(s):  
Siow Chek Tan ◽  
Yee Huan Yew
Keyword(s):  
Current Density ◽  
High Performance ◽  
Flip Chip ◽  
Voltage Drop ◽  
Package Design ◽  
Density Analysis

Flip-chip Packages with Periphery Cu Pillar Bumps as Wire Bond Replacement—Design, Modeling & Characterization

2013 ◽  
Vol 2013 (1) ◽  
pp. 000235-000235
Author(s):  
Zhe Li ◽  
Siow Chek Tan ◽  
Yee Huan Yew ◽  
Pheak Ti Teh ◽  
MJ Lee ◽  
...  
Keyword(s):  
High Speed ◽  
High Performance ◽  
Flip Chip ◽  
Low Cost ◽  
Electrical Performance ◽  
Package Design ◽  
Cu Pillar ◽  
Fine Pitch ◽  
Field Programmable ◽  
Small Form Factor

Cu pillar is an emerging interconnect technology which offers many advantages compared to traditional packaging technologies. This paper presents a novel packaging solution with periphery fine pitch Cu pillar bumps for low cost and high performance Field Programmable Gate Array (FPGA) devices. Wire bonding has traditionally been the choice for low cost implementation of memory interfaces and high speed transceivers. Migration to Cu pillar technology is mainly driven by increasing demand for IO density and package small form factor. Cu pillar bumps also offer significant improvement on electrical performance compared to wire bonds. This paper presents Cu pillar implementation in an 11×11mm flip chip CSP package. Package design is optimized for serial data transport up to 6.114Gbps to meet CPRI_LVII and PCIe Gen2 compliance requirements. Package design strategy includes die and package co-design, SI/PI modeling and physical layout optimization.

Contact Current Density Analysis Inside Human Body in Low-Frequency Band Using Geometric Multi-Grid Solver

2020 ◽  
Vol E103.C (11) ◽  
pp. 588-596
Author(s):  
Masamune NOMURA ◽  
Yuki NAKAMURA ◽  
Hiroo TARAO ◽  
Amane TAKEI
Keyword(s):  
Frequency Band ◽  
Current Density ◽  
Human Body ◽  
Low Frequency ◽  
Density Analysis

Application of an Epoxy Cap in a Flip-Chip Package Design

1989 ◽  
Vol 111 (1) ◽  
pp. 16-20 ◽  
Author(s):  
E. Suhir
Keyword(s):  
Thermal Expansion ◽  
Flip Chip ◽  
Coefficient Of Thermal Expansion ◽  
Preliminary Test ◽  
Elastic Stability ◽  
Thermally Induced ◽  
Package Design ◽  
Silicone Gels ◽  
Low Modulus ◽  
Supporting Frame

In order to combine the merits of epoxies, which provide good environmental and mechanical protection, and the merits of silicone gels, resulting in low stresses, one can use an encapsulation version, where a low modulus gel is utilized as a major encapsulant, while epoxy is applied as a protecting cap. Such an encapsulation version is currently under consideration, parallel with a metal cap version, for the Advanced VLSI package design which is being developed at AT&T Bell Laboratories. We recommend that the coefficient of thermal expansion for the epoxy be somewhat smaller than the coefficient of thermal expansion for the supporting frame. In this case the thermally induced displacements would result in a desirable tightness in the cap/frame interface. This paper is aimed at the assessment of stresses, which could arise in the supporting frame and in the epoxy cap at low temperatures. Also, the elastic stability of the cap, subjected to compression, is evaluated. The calculations were executed for the Advanced VLSI package design and for a Solder Test Vehicle (STV), which is currently used to obtain preliminary information regarding the performance of the candidate encapsulants. It is concluded that in order to avoid buckling of the cap, the latter should not be thinner than 15 mils (0.40 mm) in the case of VLSI package design and than 17.5 mils (0.45 mm) in the case of STV. At the same time, the thickness of the cap should not be greater than necessary, both for smaller stresses in the cap and for sufficient undercap space, required for wirebond encapsulation. The obtained formulas enable one to evaluate the actual and the buckling stresses. Preliminary test data, obtained by using STV samples, confirmed the feasibility of the application of an epoxy cap in a flip-chip package design.

scholarly journals Электроосаждение металлов на p-Si из водных электролитов

2021 ◽  
Vol 55 (3) ◽  
pp. 286
Author(s):  
В.Н. Горяева ◽  
Р.А. Бисенгалиев
Keyword(s):  
Electrochemical Deposition ◽  
Current Density ◽  
Voltage Drop ◽  
Electrolyte Composition ◽  
Metal Coatings ◽  
Longitudinal Resistance ◽  
Metal Layers ◽  
Deposition Mode ◽  
Selection Of

The features of electrochemical deposition of metal coatings on hole silicon are presented, and the properties of the obtained metal layers are measured. The dependence of the thickness of the depleted region and the internal voltage drop in it on the composition of the electrolyte and the type of precipitated metal was investigated. The effect of current density and electrolyte composition on the properties of precipitation is proved. By selection of the electrolyte pretreatment and the deposition mode, metal precipitates with acceptable adhesion and low longitudinal resistance were obtained.

High-performance semiconductor optical amplifier array for self-aligned packaging using Si V-groove flip-chip technique

1995 ◽  
Vol 7 (5) ◽  
pp. 476-478 ◽  
Author(s):  
D. Leclerc ◽  
P. Brosson ◽  
F. Pommereau ◽  
R. Ngo ◽  
P. Doussiere ◽  
...  
Keyword(s):  
Semiconductor Optical Amplifier ◽  
High Performance ◽  
Flip Chip ◽  
Optical Amplifier

Hydrothermal synthesis MoO3@CoMoO4 hybrid as an anode material for high performance lithium rechargeable batteries

2019 ◽  
Vol 12 (01) ◽  
pp. 1850104 ◽  
Author(s):  
Jinggao Wu ◽  
Qi Lai ◽  
Canyu Zhong
Keyword(s):  
Current Density ◽  
High Performance ◽  
High Current Density ◽  
Rate Capability ◽  
Lithium Ion ◽  
Charge Transfer Resistance ◽  
Rechargeable Batteries ◽  
Transfer Resistance ◽  
Lithium Rechargeable Batteries ◽  
One Step

MoO3@CoMoO4 hybrid is fabricated by a facile one-step hydrothermal method and is used as anode for lithium-ion battery (LIB). Compared to pristine MoO3, galvanostatic charge–discharge tests show that the hybrid electrode delivered a remarkable rate capability of 586.69[Formula: see text]mAh[Formula: see text]g[Formula: see text] at the high current density of 1000[Formula: see text]mA[Formula: see text]g[Formula: see text] and a greatly enhanced cyclic capacity of 887.36[Formula: see text]mA[Formula: see text]h[Formula: see text]g[Formula: see text] after 140 cycles at the current density of 200[Formula: see text]mA[Formula: see text]g[Formula: see text] (with capacity retention, 85.3%). The superior electrochemical properties could be ascribed to the synergistic effect of MoO3 and CoO nanostructure that results in the lower charge transfer resistance and the higher Li[Formula: see text] diffusion coefficient, thus leading to high performance Li[Formula: see text] reversibility storage.

Electromigration in Power Devices

2020 ◽  
Vol 2020 (1) ◽  
pp. 000078-000084
Author(s):  
Hao Zhuang ◽  
Robert Bauer ◽  
Markus Dinkel
Keyword(s):  
Current Density ◽  
Flip Chip ◽  
Semiconductor Industry ◽  
Stress Test ◽  
Test System ◽  
Circuit Board ◽  
Power Device ◽  
Current Direction ◽  
Power Devices ◽  
Maximum Current

Abstract In the power semiconductor industry, there is continuous development towards higher maximum current capability of devices while device dimensions shrink. This leads to an increase in current density which the devices have to handle, and raises the question if electromigration (EM) is a critical issue here. Generally, an EM failure can be described by the Black’s equation with temperature and current density as the main influencing factors. Normally, the current that the power packages need to handle lies in the range of 100 A. However, it should be noted that power devices exhibit asymmetric sizes of drain and source contacts. This may lead to higher current density at the source leads (area ratio drain/source: ~8x for QFN 5×6). Nevertheless, the source lead area is still much larger than that of the flip chip bumps (i.e., 28 times larger compared to a 100 μm micro-bump). This typically enhances the safety of the power device with respect to EM. However, with regard to future development towards higher maximum current capability, we intended to investigate further on the EM of power devices. In the present work, we focused on the PQFN 5×6 package to study the EM behavior of a power device soldered on a Printed Circuit Board (PCB). We employed the highest current (120 A) and temperature (150 °C) that the stress test system could handle to study EM in accelerated mode. First fails occurred after ~1200 h, which was much earlier than expected from previous flip-chip investigations. In addition, we found separation gaps in the solder joint between drain contact and PCB, which experienced the lowest current density in the whole test. Contradictorily, we observed only minor solder degradation at the source interface, regardless of the higher current density there. Nevertheless, the separating metal interfaces still correlated well with the current direction. Thermal simulations revealed that due to the self-heating of the device by the high current applied, both the drain and source leads were exposed to much higher temperatures (Tmax = 168 °C) than the PCB board which was kept under temperature control at 150 °C. This temperature difference resulted in a thermal gradient between the device and PCB which, in turn, triggered thermal migration (TM) in addition to EM. As TM for the drain contact occurred in the same direction as EM, it enhanced the degradation effect and therefore led to a shorter time-to-failure at the drain. In contrast to this, such an enhanced effect did not occur at the source side. As a result, we observed higher solder degradation at the drain side, which we did confirm by switching the current direction in the test. To minimize the TM effect, a special EM test vehicle, which used a Cu plate instead of the MOSFET chip, was designed and fabricated. Thermal simulation verified that the device operated at similar temperatures as the PCB board. Using this setup, it was possible to study EM in an accelerated mode and, thus, investigate the pure EM behavior of the power device.

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