EELS chemical bond characterization of process induced damages in low-k dielectric films

2012 ◽  
Author(s):  
YongKai Zhou ◽  
Jie Zhu ◽  
AnYan Du ◽  
YouNan Hua ◽  
SiPing Zhao ◽  
...  
Keyword(s):  
Chemical Bond ◽  
Dielectric Films ◽  
Low K

Electrical Characterization of Sub-30nm Gatelength SOI MOSFETs

2004 ◽  
Author(s):  
Terence Kane ◽  
Michael P. Tenney
Keyword(s):  
Electrical Characterization ◽  
Dielectric Films ◽  
Atomic Force ◽  
Soi Devices ◽  
Low K

Abstract Atomic Force Probe (AFP) techniques are well suited for the electrical characterization of sub-65nm node SOI devices with multiple metal interconnect levels and low-k interlevel dielectric films. This paper discusses the use of these techniques on sub-30nm gatelength SOI MOSFETs.

Nondestructive in Situ Characterization of Molecular Structures at the Surface and Buried Interface of Silicon-Supported Low-k Dielectric Films

2015 ◽  
Vol 119 (4) ◽  
pp. 1736-1746 ◽  
Author(s):  
John N. Myers ◽  
Xiaoxian Zhang ◽  
Jeff Bielefeld ◽  
Qinghuang Lin ◽  
Zhan Chen
Keyword(s):  
Molecular Structures ◽  
Dielectric Films ◽  
In Situ Characterization ◽  
Low K

Chemical and Morphological Characterization of Low-k Dielectric Films Deposited From Hexamethyldisiloxane and Ethylene RF Glow Discharges

2010 ◽  
Vol 7 (12) ◽  
pp. 1022-1029 ◽  
Author(s):  
Anna Maria Coclite ◽  
Antonella Milella ◽  
Fabio Palumbo ◽  
Francesco Fracassi ◽  
Riccardo d'Agostino
Keyword(s):  
Morphological Characterization ◽  
Dielectric Films ◽  
Glow Discharges ◽  
Low K

Precision Xe Plasma FIB Delayering for Physical Failure Analysis of Sub-20 nm Microprocessor Devices

2017 ◽  
Author(s):  
D. Zudhistira ◽  
V. Viswanathan ◽  
V. Narang ◽  
J.M. Chin ◽  
S. Sharang ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Dielectric Films ◽  
Planar Surface ◽  
Chemical Methods ◽  
Root Cause ◽  
Essential Step ◽  
Dielectric Layers ◽  
Wet Chemical ◽  
20 Nm ◽  
Low K

Abstract Deprocessing is an essential step in the physical failure analysis of ICs. Typically, this is accomplished by techniques such as wet chemical methods, RIE, and mechanical manual polishing. Manual polishing suffers from highly non-uniform delayering particularly for sub 20nm technologies due to aggressive back-end-of-line scaling and porous ultra low-k dielectric films. Recently gas assisted Xe plasma FIB has demonstrated uniform delayering of the metal and dielectric layers, achieving a planar surface of heterogeneous materials. In this paper, the successful application of this technique to delayer sub-20 nm microprocessor chips with real defects to root cause the failure is presented.

Finite-Element Modeling and Quantitative Measurement Using Scanning Microwave Microscopy to Characterize Dielectric Films

2018 ◽  
Author(s):  
K. A. Rubin ◽  
W. Jolley ◽  
Y. Yang
Keyword(s):  
Thin Films ◽  
Dielectric Film ◽  
Dielectric Constants ◽  
Dielectric Films ◽  
Silicon Substrates ◽  
Fem Modeling ◽  
Dielectric Thin Films ◽  
Microwave Microscopy ◽  
Scanning Microwave Microscopy ◽  
Low K

Abstract Scanning Microwave Impedance Microscopy (sMIM) can be used to characterize dielectric thin films and to quantitatively discern film thickness differences. FEM modeling of the sMIM response provides understanding of how to connect the measured sMIM signals to the underlying properties of the dielectric film and its substrate. Modeling shows that sMIM can be used to characterize a range of dielectric film thicknesses spanning both low-k and medium-k dielectric constants. A model system consisting of SiO2 thin films of various thickness on silicon substrates is used to illustrate the technique experimentally.

scholarly journals Isolation and characterization of a new cold-active protease from psychrotrophic bacteria of Western Himalayan glacial soil

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Saleem Farooq ◽  
Ruqeya Nazir ◽  
Shabir Ahmad Ganai ◽  
Bashir Ahmad Ganai
Keyword(s):  
Specific Activity ◽  
Temperature Range ◽  
Psychrotrophic Bacteria ◽  
Isolation And Characterization ◽  
Cold Active ◽  
Active Protease ◽  
Quantitative Screening ◽  
First Time ◽  
Low K

AbstractAs an approach to the exploration of cold-active enzymes, in this study, we isolated a cold-active protease produced by psychrotrophic bacteria from glacial soils of Thajwas Glacier, Himalayas. The isolated strain BO1, identified as Bacillus pumilus, grew well within a temperature range of 4–30 °C. After its qualitative and quantitative screening, the cold-active protease (Apr-BO1) was purified. The Apr-BO1 had a molecular mass of 38 kDa and showed maximum (37.02 U/mg) specific activity at 20 °C, with casein as substrate. It was stable and active between the temperature range of 5–35 °C and pH 6.0–12.0, with an optimum temperature of 20 °C at pH 9.0. The Apr-BO1 had low Km value of 1.0 mg/ml and Vmax 10.0 µmol/ml/min. Moreover, it displayed better tolerance to organic solvents, surfactants, metal ions and reducing agents than most alkaline proteases. The results exhibited that it effectively removed the stains even in a cold wash and could be considered a decent detergent additive. Furthermore, through protein modelling, the structure of this protease was generated from template, subtilisin E of Bacillus subtilis (PDB ID: 3WHI), and different methods checked its quality. For the first time, this study reported the protein sequence for psychrotrophic Apr-BO1 and brought forth its novelty among other cold-active proteases.

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