High density, low energy, magnetic tunnel junction based block RAMs for memory-rich FPGAs

2016 ◽  
Author(s):  
Kosuke Tatsumura ◽  
Sadegh Yazdanshenas ◽  
Vaughn Betz
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
High Density ◽  
Low Energy

scholarly journals Hybrid Non-Volatile Flip-Flops Using Spin-Orbit-Torque (SOT) Magnetic Tunnel Junction Devices for High Integration and Low Energy Power-Gating Applications

Electronics ◽  
2020 ◽  
Vol 9 (9) ◽  
pp. 1406
Author(s):  
Jaeyoung Park
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Low Energy ◽  
The Other ◽  
Energy Reduction ◽  
Power Gating ◽  
Spin Orbit ◽  
Flip Flop ◽  
Area Overhead ◽  
Nmos Transistors

This paper presents two novel hybrid non-volatile flip-flops (NVFFs) comprised of the conventional CMOS flip-flop for static storage in normal operations and Spin-Orbit-Torque Magnetic Tunnel Junction (SOT-MTJ) devices for temporary storage during power gating. The proposed NVFFs re-utilize a part of the standard CMOS flip-flop infrastructure for storing and restoring data onto MTJs for reducing the area. Furthermore, the proposed NVFFs re-use a write current, which is used for storing an MTJ, to write the other MTJ at a time, resulting in 50% storing energy reduction. To reduce the area further, the number of external terminals of an MTJ is reduced by shorting the shorting physical terminals. Removing a terminal using the proposed STT-Like SOT configuration results in fewer transistors to control. The proposed NVFF circuits are evaluated using a compact MTJ model targeting implementation in a 14-nm technology node. Analysis indicates that area overheads are only 10.3% and 6.9% compared to the conventional D flip-flop because three or two minimum-sized NMOS transistors are added for accessing MTJs. Compared to the best previously known NVFFs, the proposed NVFF has an improvement by a factor of 2–8 in terms of the area overhead.

Etch characteristics of magnetic tunnel junction stack using a high density plasma in a HBr/Ar gas

2007 ◽  
Vol 4 (12) ◽  
pp. 4416-4420 ◽  
Author(s):  
Su Ryun Min ◽  
Han Na Cho ◽  
Su Jin Noh ◽  
Kee Won Kim ◽  
Sun Ae Seo ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
High Density ◽  
Ar Gas ◽  
Density Plasma

MRAM Concepts for Sub-Nanosecond Switching and Ultimate Scalability

2014 ◽  
Vol 95 ◽  
pp. 126-135
Author(s):  
Ioan Lucian Prejbeanu ◽  
Sebastien Bandiera ◽  
Ricardo Sousa ◽  
Bernard Dieny
Keyword(s):  
Thermal Stability ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Spin Transfer Torque ◽  
High Thermal Stability ◽  
High Density ◽  
Spin Transfer ◽  
Perpendicular Anisotropy ◽  
Current Switching ◽  
Technology Nodes

This work reports on advances in MRAM cells aiming at sub-nanosecond switching and for sub-20nm technology nodes. Ultrafast precessional spin-transfer switching in elliptical magnetic tunnel junction nanopillars is possible to obtain in samples integrating a perpendicular polarizer and a tunnel junction with in-plane magnetized electrodes. We show that spin transfer torque (STT) switching in less than 500ps can be achieved in these structures with corresponding write energy less than 100fJ. For high density integration and possibly sub-20nm diameter cells the use of a thermally assisted concept for perpendicular anisotropy cells, where the intrinsic heating is used to simultaneously achieve high thermal stability and low current switching.

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