Magnetic-tunnel-junction based low-energy nonvolatile flip-flop using an area-efficient self-terminated write driver

2015 ◽  
Vol 117 (17) ◽  
pp. 17B504 ◽  
Author(s):  
Daisuke Suzuki ◽  
Takahiro Hanyu
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Low Energy ◽  
Flip Flop ◽  
Area Efficient

scholarly journals Hybrid Non-Volatile Flip-Flops Using Spin-Orbit-Torque (SOT) Magnetic Tunnel Junction Devices for High Integration and Low Energy Power-Gating Applications

Electronics ◽  
2020 ◽  
Vol 9 (9) ◽  
pp. 1406
Author(s):  
Jaeyoung Park
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Low Energy ◽  
The Other ◽  
Energy Reduction ◽  
Power Gating ◽  
Spin Orbit ◽  
Flip Flop ◽  
Area Overhead ◽  
Nmos Transistors

This paper presents two novel hybrid non-volatile flip-flops (NVFFs) comprised of the conventional CMOS flip-flop for static storage in normal operations and Spin-Orbit-Torque Magnetic Tunnel Junction (SOT-MTJ) devices for temporary storage during power gating. The proposed NVFFs re-utilize a part of the standard CMOS flip-flop infrastructure for storing and restoring data onto MTJs for reducing the area. Furthermore, the proposed NVFFs re-use a write current, which is used for storing an MTJ, to write the other MTJ at a time, resulting in 50% storing energy reduction. To reduce the area further, the number of external terminals of an MTJ is reduced by shorting the shorting physical terminals. Removing a terminal using the proposed STT-Like SOT configuration results in fewer transistors to control. The proposed NVFF circuits are evaluated using a compact MTJ model targeting implementation in a 14-nm technology node. Analysis indicates that area overheads are only 10.3% and 6.9% compared to the conventional D flip-flop because three or two minimum-sized NMOS transistors are added for accessing MTJs. Compared to the best previously known NVFFs, the proposed NVFF has an improvement by a factor of 2–8 in terms of the area overhead.

A Magnetic Tunnel Junction Based Zero Standby Leakage Current Retention Flip-Flop

2012 ◽  
Vol 20 (11) ◽  
pp. 2044-2053 ◽  
Author(s):  
Kyungho Ryu ◽  
Jisu Kim ◽  
Jiwan Jung ◽  
Jung Pill Kim ◽  
Seung H. Kang ◽  
...  
Keyword(s):  
Leakage Current ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Flip Flop

Design of a Nine-Transistor/Two-Magnetic-Tunnel-Junction-Cell-Based Low-Energy Nonvolatile Ternary Content-Addressable Memory

2012 ◽  
Vol 51 (2S) ◽  
pp. 02BM06 ◽  
Author(s):  
Shoun Matsunaga ◽  
Akira Katsumata ◽  
Masanori Natsui ◽  
Tetsuo Endoh ◽  
Hideo Ohno ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Low Energy ◽  
Content Addressable Memory ◽  
Ternary Content Addressable Memory
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