Mechanism of premature etch stop in high-density magnetic-tunnel-junction patterning using CO/NH3 plasma with Ta mask

2020 ◽  
Vol 38 (4) ◽  
pp. 042805
Author(s):  
Makoto Satake ◽  
Masaki Yamada ◽  
Kenetsu Yokogawa
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
High Density ◽  
Etch Stop

Etch characteristics of magnetic tunnel junction stack using a high density plasma in a HBr/Ar gas

2007 ◽  
Vol 4 (12) ◽  
pp. 4416-4420 ◽  
Author(s):  
Su Ryun Min ◽  
Han Na Cho ◽  
Su Jin Noh ◽  
Kee Won Kim ◽  
Sun Ae Seo ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
High Density ◽  
Ar Gas ◽  
Density Plasma

MRAM Concepts for Sub-Nanosecond Switching and Ultimate Scalability

2014 ◽  
Vol 95 ◽  
pp. 126-135
Author(s):  
Ioan Lucian Prejbeanu ◽  
Sebastien Bandiera ◽  
Ricardo Sousa ◽  
Bernard Dieny
Keyword(s):  
Thermal Stability ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Spin Transfer Torque ◽  
High Thermal Stability ◽  
High Density ◽  
Spin Transfer ◽  
Perpendicular Anisotropy ◽  
Current Switching ◽  
Technology Nodes

This work reports on advances in MRAM cells aiming at sub-nanosecond switching and for sub-20nm technology nodes. Ultrafast precessional spin-transfer switching in elliptical magnetic tunnel junction nanopillars is possible to obtain in samples integrating a perpendicular polarizer and a tunnel junction with in-plane magnetized electrodes. We show that spin transfer torque (STT) switching in less than 500ps can be achieved in these structures with corresponding write energy less than 100fJ. For high density integration and possibly sub-20nm diameter cells the use of a thermally assisted concept for perpendicular anisotropy cells, where the intrinsic heating is used to simultaneously achieve high thermal stability and low current switching.

Magnetic tunnel junction device with perpendicular magnetization films for high-density magnetic random access memory

2002 ◽  
Vol 91 (8) ◽  
pp. 5246-5249 ◽  
Author(s):  
Naoki Nishimura ◽  
Tadahiko Hirai ◽  
Akio Koganei ◽  
Takashi Ikeda ◽  
Kazuhisa Okano ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Random Access ◽  
Magnetic Tunnel Junction ◽  
Random Access Memory ◽  
High Density ◽  
Access Memory ◽  
Magnetic Random Access Memory ◽  
Perpendicular Magnetization ◽  
Junction Device

Toward Sub-20 nm Magnetic Tunnel Junction for Embedded Cache Memory

2016 ◽  
Vol 99 ◽  
pp. 90-93
Author(s):  
Toshihiro Sugii ◽  
Hideyuki Noshiro ◽  
Yuichi Yamazaki ◽  
Chikako Yoshida ◽  
Yoshihisa Iba
Keyword(s):  
Plasma Treatment ◽  
Tunnel Junction ◽  
Oxygen Plasma ◽  
Magnetic Tunnel Junction ◽  
High Density ◽  
Cache Memory ◽  
Plasma Treatments ◽  
20 Nm ◽  
Sidewall Surface

In this paper, shrink process for small MTJs is investigated from the point of scalability. In the shrink process, various nitrogen or oxygen plasma treatments are done after the MTJ (CoFeB/MgO/CoFeB) etching. During this plasma treatment, the sidewall surface of the MTJ is modified, which results in the small electrical MTJ size of around 20 nm.Proposed techniques are scalable and promising for sub-20 nm MTJ generation in high density cache MRAM application.

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