Eliminating etch stop in high-density magnetic tunnel junction patterning using high-temperature CO/NH3 plasma etching

Makoto Satake; Takahiro Abe; Takamasa Ichino; Makoto Suyama; Tadayoshi Kawaguchi; Masaki Yamada; Eiji Matsumoto; Kenji Maeda; Kenetsu Yokogawa

doi:10.1116/1.5123485

Eliminating etch stop in high-density magnetic tunnel junction patterning using high-temperature CO/NH3 plasma etching

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.5123485 ◽

2019 ◽

Vol 37 (6) ◽

pp. 061808 ◽

Cited By ~ 1

Author(s):

Makoto Satake ◽

Takahiro Abe ◽

Takamasa Ichino ◽

Makoto Suyama ◽

Tadayoshi Kawaguchi ◽

...

Keyword(s):

High Temperature ◽

Plasma Etching ◽

Tunnel Junction ◽

Magnetic Tunnel Junction ◽

High Density ◽

Etch Stop

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Mechanism of premature etch stop in high-density magnetic-tunnel-junction patterning using CO/NH3 plasma with Ta mask

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/6.0000305 ◽

2020 ◽

Vol 38 (4) ◽

pp. 042805

Author(s):

Makoto Satake ◽

Masaki Yamada ◽

Kenetsu Yokogawa

Keyword(s):

Tunnel Junction ◽

Magnetic Tunnel Junction ◽

High Density ◽

Etch Stop

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Dilute magnetic semiconductor electrode based all semiconductor magnetic tunnel junction for high-temperature applications

Physica B Condensed Matter ◽

10.1016/j.physb.2021.413525 ◽

2021 ◽

pp. 413525

Author(s):

Gul Faroz A. Malik ◽

Mubashir A. Kharadi ◽

Farooq A. Khanday ◽

Khurshed A. Shah ◽

Sparsh Mittal ◽

...

Keyword(s):

High Temperature ◽

Tunnel Junction ◽

Dilute Magnetic Semiconductor ◽

Magnetic Semiconductor ◽

Magnetic Tunnel Junction ◽

Semiconductor Electrode ◽

Temperature Applications

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High-Temperature Magnetic Tunnel Junction Magnetometers Based on L1$_0$-PtMn Pinned Layer

IEEE Sensors Letters ◽

10.1109/lsens.2020.2991654 ◽

2020 ◽

Vol 4 (5) ◽

pp. 1-4

Author(s):

Sina Ranjbar ◽

Muftah Al-Mahdawi ◽

Mikihiko Oogane ◽

Yasuo Ando

Keyword(s):

High Temperature ◽

Tunnel Junction ◽

Magnetic Tunnel Junction

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High-temperature magnetoresistance study of a magnetic tunnel junction

Journal of Magnetism and Magnetic Materials ◽

10.1016/j.jmmm.2006.02.062 ◽

2006 ◽

Vol 304 (1) ◽

pp. e297-e299

Author(s):

D.C. Chen ◽

Y.D. Yao ◽

C.M. Chen ◽

James Hung ◽

Y.S. Chen ◽

...

Keyword(s):

High Temperature ◽

Tunnel Junction ◽

Magnetic Tunnel Junction

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High-Density and Low-Power Nonvolatile Static Random Access Memory Using Spin-Transfer-Torque Magnetic Tunnel Junction

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bd01 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BD01 ◽

Cited By ~ 18

Author(s):

Takashi Ohsawa ◽

Fumitaka Iga ◽

Shoji Ikeda ◽

Takahiro Hanyu ◽

Hideo Ohno ◽

...

Keyword(s):

Low Power ◽

Tunnel Junction ◽

Random Access ◽

Magnetic Tunnel Junction ◽

Random Access Memory ◽

Spin Transfer Torque ◽

High Density ◽

Spin Transfer ◽

Static Random Access Memory ◽

Access Memory

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Top pinned magnetic tunnel junction stacks with high annealing tolerance for high density STT-MRAM applications

2017 IEEE International Magnetics Conference (INTERMAG) ◽

10.1109/intmag.2017.8007702 ◽

2017 ◽

Cited By ~ 2

Author(s):

J. Swerts ◽

S. Couet ◽

E. Liu ◽

S. Mertens ◽

T. Lin ◽

...

Keyword(s):

Tunnel Junction ◽

Magnetic Tunnel Junction ◽

High Density ◽

High Annealing

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Voltage-controlled magnetic tunnel junction based MRAM for replacing high density DRAM circuits corresponding to 2X nm generation

2017 IEEE International Magnetics Conference (INTERMAG) ◽

10.1109/intmag.2017.8007706 ◽

2017 ◽

Cited By ~ 2

Author(s):

K. Ikegami ◽

Y. Shiota ◽

T. Nozaki ◽

K. Abe ◽

H. Noguchi ◽

...

Keyword(s):

Tunnel Junction ◽

Magnetic Tunnel Junction ◽

High Density

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High temperature annealing stability of magnetic properties in MgO-based perpendicular magnetic tunnel junction stacks with CoFeB polarizing layer

Journal of Applied Physics ◽

10.1063/1.3549605 ◽

2011 ◽

Vol 109 (7) ◽

pp. 07C709 ◽

Cited By ~ 26

Author(s):

M. Tofizur Rahman ◽

Andrew Lyle ◽

Guohan Hu ◽

William J. Gallagher ◽

Jian-ping Wang

Keyword(s):

Magnetic Properties ◽

High Temperature ◽

Tunnel Junction ◽

Magnetic Tunnel Junction ◽

High Temperature Annealing

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High density fluorocarbon plasma etching of methylsilsesquioxane SiOC(H) low-kmaterial and SiC(H) etch stop layer: surface analyses and investigation of etch mechanisms

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/40/13/007 ◽

2007 ◽

Vol 40 (13) ◽

pp. 3951-3959 ◽

Cited By ~ 19

Author(s):

D Eon ◽

V Raballand ◽

G Cartry ◽

C Cardinaud

Keyword(s):

Plasma Etching ◽

High Density ◽

Layer Surface ◽

Fluorocarbon Plasma ◽

Etch Stop ◽

Etch Stop Layer

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High-Density and Low-Power Nonvolatile Static Random Access Memory Using Spin-Transfer-Torque Magnetic Tunnel Junction

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.02bd01 ◽

2012 ◽

Vol 51 (2S) ◽

pp. 02BD01 ◽

Cited By ~ 10

Author(s):

Takashi Ohsawa ◽

Fumitaka Iga ◽

Shoji Ikeda ◽

Takahiro Hanyu ◽

Hideo Ohno ◽

...

Keyword(s):

Low Power ◽

Tunnel Junction ◽

Random Access ◽

Magnetic Tunnel Junction ◽

Random Access Memory ◽

Spin Transfer Torque ◽

High Density ◽

Spin Transfer ◽

Static Random Access Memory ◽

Access Memory

Download Full-text