A Novel Photosensitive Dry-Film Dielectric Material for High Density Package Substrate, Interposer and Wafer Level Package

2016 ◽  
Author(s):  
Xiaozhu Wei ◽  
Yoko Shibasaki
Keyword(s):  
Dielectric Material ◽  
High Density ◽  
Wafer Level ◽  
Film Dielectric ◽  
Wafer Level Package ◽  
Dry Film

Lithographic evaluation of thin photoimageable dielectric dry film for advanced panel level packaging applications

2018 ◽  
Vol 2018 (1) ◽  
pp. 000361-000364
Author(s):  
Keith Best ◽  
Ognian Dimov ◽  
Sudmun Habib ◽  
Sanjay Malik
Keyword(s):  
Dielectric Material ◽  
Dielectric Materials ◽  
High Density ◽  
Thermal Shrinkage ◽  
Seed Formation ◽  
Mechanical And Electrical Properties ◽  
Advanced Packaging ◽  
Negative Tone ◽  
The Cost ◽  
Dry Film

Abstract This paper presents a new dielectric material capable of resolving 2 to 3μm features that are required for high density advanced packaging applications. The material is applied in dry film format to be conducive to panel-level processing. The material can be processed at temperatures below 170°C and total thermal shrinkage is below 5%, resulting in exceptionally low stress of 11 MPa. The film is thermally stable at temperatures up to 350°C. Mechanical and electrical properties of the material are state of the art. As the demand for high density packages increases, so will the pressure to lower the cost of manufacturing. Migrating from wafers to large non-circular panels offers several key cost advantages. There are multiple technical challenges that need to be addressed before commercial viability of panel scale manufacturing can be established. A new class of novel dielectric materials will be needed that can be processed at low temperatures and demonstrate low shrinkage to minimize warpage. In this study, 2 to 3μm patterns were successfully formed using i-line stepper exposure conditions. The process started by laminating a 510mm × 515mm panel with highly photosensitive dielectric film. The laminated panels were exposed at a nominal dose of 125 mJ/cm2. Fine negative tone patterns were created after development. For the metallization of the layer, the seed layer was deposited with titanium-copper sputtering. After the seed formation, trenches were filled with copper by an electrolytic plating process.

Process and Reliability of Embedded Micro-Wafer-Level Package (EMWLP) Using Low Cure Temperature Dielectric Material

2012 ◽  
Vol 2 (1) ◽  
pp. 13-22
Author(s):  
Vempati Srinivas Rao ◽  
Vasarla Nagendra Sekhar ◽  
Ho Soon Wee ◽  
Ranjan Rajoo ◽  
Gaurav Sharma ◽  
...  
Keyword(s):  
Dielectric Material ◽  
Wafer Level ◽  
Cure Temperature ◽  
Wafer Level Package
Sign in / Sign up

Export Citation Format

Share Document