A comprehensive reliability study on a CoWoS 3D IC package

Author(s):  
Ganesh Hariharan ◽  
Raghunandan Chaware ◽  
Inderjit Singh ◽  
Jeff Lin ◽  
Laurene Yip ◽  
...  
2016 ◽  
Vol 28 (4) ◽  
pp. 177-187
Author(s):  
Mei-Ling Wu ◽  
Jia-Shen Lan

Purpose This paper aims to develop the thermal resistance network model based on the heat dissipation paths from the multi-die stack to the ambient and takes into account the composite effects of the thermal spreading resistance and one-dimensional (1D) thermal resistance. The thermal spreading resistance comprises majority of the thermal resistance when heat flows in the horizontal direction of a large plate. The present study investigates the role of determining the temperature increase compared to the thermal resistances intrinsic to the 3D technology, including the thermal resistances of bonding layers and through silicon vias (TSVs). Design/methodology/approach This paper presents an effective method that can be applied to predict the thermal failure of the heat source of silicon chips. An analytical model of the 3D integrated circuit (IC) package, including the full structure, is developed to estimate the temperature of stacked chips. Two fundamental theories are used in this paper – Laplace’s equation and the thermal resistance network – to calculate 1D thermal resistance and thermal spreading resistance on the 3D IC package. Findings This paper provides a comprehensive model of the 3D IC package, thus improving the existing analytical approach for predicting the temperature of the heat source on the chip for the 3D IC package. Research limitations/implications Based on the aforementioned shortcomings, the present study aims to determine if the use of an analytical resistance model would improve the handling of a temperature increase on the silicon chips in a 3D IC package. To achieve this aim, a simple rectangular plate is utilized to analyze the temperature of the heat source when applying the heat flux on the area of the heat source. Next, the analytical model of a pure plate is applied to the 3D IC package, and the temperature increase is analyzed and discussed. Practical implications The main contribution of this paper is the use of a simple concept and a theoretical resistance network model to improve the current understanding of thermal failure by redesigning the parameters or materials of a printed circuit board. Social implications In this paper, an analytical model of a 3D IC package was proposed based on the calculation of the thermal resistance and the analysis of the network model. Originality/value The aim of this work was to estimate the mean temperature of the silicon chips and understand the heat convection paths in the 3D IC package. The results reveal these phenomena of the complete structure, including TSV and bump, and highlight the different thermal conductivities of the materials used in creating the 3D IC packages.


Author(s):  
Bahareh Banijamali ◽  
Chien-Chia Chiu ◽  
Cheng-Chieh Hsieh ◽  
Tsung-Shu Lin ◽  
Clark Hu ◽  
...  

Author(s):  
Thomas Whipple ◽  
Taranjit Kukal ◽  
Keith Felton ◽  
Vassilios Gerousis
Keyword(s):  
3D Ic ◽  

Author(s):  
Raghunandan Chaware ◽  
Ganesh Hariharan ◽  
Jeff Lin ◽  
Inderjit Singh ◽  
Glenn O'Rourke ◽  
...  
Keyword(s):  
3D Ic ◽  

2013 ◽  
Vol 378 ◽  
pp. 617-623
Author(s):  
Chieh Kung

3D IC packaging technologies are emerging as they are able to respond to the demands for smaller form-factor, faster, high density interconnection at cheaper cost. Moreover, for a 3D IC package, through silicon vias (TSVs) provide high wiring density interconnection, thus improve electrical performance due to shorter interconnection from the chip to the substrate. However, TSV technology is still facing severe challenges as the physical design problems due to the existence of the copper vias remain resolved. Apart from thermal expansion mismatch, the problems are due in part to the nonlinear behavior of SAC lead-free solder used in the package as an echo of environmental concerns and RoHS directive. However, there exists a wide range of values of the parameters of the creep model used to describe the nonlinear behavior of SAC. The effects of the variations of these parameters on the thermal reliability of IC packages, particularly the 3D IC package with built-in TSVs considered herein, is of interest. Presented in the paper is a study on assessment of the influence of the creep parameters of SAC solders on the isothermal fatigue reliability of a 3D IC package with built-in TSVs. The results show that as the strain rate is linear proportional to C1, a larger C1 tends to enlarge the strain rate hence decrease the fatigue life. However, the relationship between the fatigue life of the specific IC package is not linear. Although the variation of C2 causes a large variation in the fatigue life, its effect becomes insignificant when a moderate value of C2 is considered. As a power parameter to the hyperbolic sine function of the creep model, C3 contributes a 40% variation to the fatigue life. Lastly, the fatigue life increases with C4 value, and the gain of fatigue life increases as C4 approaches the upper limit considered herein.


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