Second-level interconnects reliability for large-die flip chip lead-free BGA package in power cycling and thermal cycling tests

2011 ◽  
Author(s):  
Larry Lin ◽  
Yu-Ling Tsai ◽  
Tulip Chou ◽  
Ray Su ◽  
Gary Lu ◽  
...  
Keyword(s):  
Thermal Cycling ◽  
Flip Chip ◽  
Lead Free ◽  
Power Cycling ◽  
Bga Package

Effects of Corner/Edge Bonding and Underfill Properties on the Thermal Cycling Performance of Lead Free Ball Grid Array Assemblies

2012 ◽  
Vol 134 (1) ◽  
Author(s):  
P. Borgesen ◽  
D. Blass ◽  
M. Meilunas
Keyword(s):  
Thermal Cycling ◽  
Flip Chip ◽  
Printed Circuit Board ◽  
Ball Grid Array ◽  
Cycling Performance ◽  
Circuit Board ◽  
Lead Free ◽  
Sac305 Solder ◽  
Solder Balls ◽  
Selection Of

Underfilling will almost certainly improve the performance of an area array assembly in drop, vibration, etc. However, depending on the selection of materials, the thermal fatigue life may easily end up worse than without an underfill. This is even more true for lead free than for eutectic SnPb soldered assemblies. If reworkability is required, the bonding of the corners or a larger part of the component edges to the printed circuit board (PCB), without making contact with the solder joints, may offer a more attractive materials selection. A 30 mm flip chip ball grid array (FCBGA) component with SAC305 solder balls was attached to a PCB and tested in thermal cycling with underfills and corner/edge bonding reinforcements. Two corner bond materials and six reworkable and nonreworkable underfills with a variety of mechanical properties were considered. All of the present underfills reduced the thermal cycling performance, while edge bonding improved it by up to 50%. One set of the FCBGAs was assembled with a SnPb paste and underfilled with a soft reworkable underfill. Surprisingly, this improved the thermal cycling performance slightly beyond that of the nonunderfilled assemblies, providing up to three times better life than for those assembled with a SAC305 paste.

Characterization of Die Stress Distributions in Area Array Flip Chip Packaging

2009 ◽  
Author(s):  
Jordan Roberts ◽  
M. Kaysar Rahim ◽  
Jeffrey C. Suhling ◽  
Richard C. Jaeger ◽  
Pradeep Lall ◽  
...  
Keyword(s):  
Thermal Cycling ◽  
Flip Chip ◽  
Thermal Power ◽  
Temperature Cycling ◽  
Aging Effects ◽  
Area Array ◽  
Power Cycling ◽  
Die Stress ◽  
On Chip ◽  
Test Chips

On-chip piezoresistive stress sensors represent a unique approach for characterizing stresses in silicon die embedded within complicated packaging architectures. In this work, we have used test chips containing such sensors to measure the stresses induced in microprocessor die after various steps of the assembly process, as well as to continuously characterize the in-situ die surface stress during thermal cycling and power cycling. The utilized (111) silicon sensor rosettes were able to measure the complete three-dimensional stress state (all 6 stress components) at each sensor site being monitored by the data acquisition hardware. The test chips had dimensions of 20 × 20 mm, and 3600 lead free solder interconnects (full area array) were used to connect the chips to high CTE ceramic chip carriers. Before packaging, the sensor resistances were measured by directly probing the test chip wafers. The chips were then diced, reflowed to the ceramic substrate, and then underfilled and cured. Finally, a metallic lid was attached to complete the ceramic LGA package. After every packaging step (solder reflow, underfill dispense and cure, lid attachment and adhesive cure), the sensor resistances were re-measured, so that the die stresses induced by each assembly operation could be characterized. The build-up of the die stresses was found to be monotonically increasing, and the relative severity of each assembly step was judged and compared. Such an approach also allows for various material sets (solders, underfills, TIM materials, lid metals, and lid adhesives) to be analyzed and rated for their contribution to the die stress level. After first level packaging of the chips on the ceramic chip carriers, initial experiments have been performed to analyze the effects of thermal cycling and power cycling on the die stresses. Thermal cycling of selected parts was performed from 0 to 100 C (40 minute cycle, 10 minute ramps and dwells). Power cycling of selected parts was performed by exciting the on-chip heaters on the test chips with power levels typical of microprocessor die. During the thermal/power cycling, sensor resistances at critical locations on the die device surface (e.g. die center and die corners) were recorded continuously. From the resistance data, the stresses at each site were calculated and plotted versus time. The experimental observations show some cycle-to-cycle evolution in the stress magnitudes due to material aging effects, stress relaxation and creep phenomena, and development of interfacial damage. The observed stress variations as a function of temperature cycling duration are currently being correlated with the delaminations occurring at the interfaces between the die and underfill and the die and lid adhesive. In addition, finite element models of the packages are being developed and correlated with the data.

Measurement of Microprocessor Die Stress due to Thermal Cycling, Power Cycling, and Second Level Assembly

2013 ◽  
Author(s):  
Jordan C. Roberts ◽  
Mohammad Motalab ◽  
Safina Hussain ◽  
Jeffrey C. Suhling ◽  
Richard C. Jaeger ◽  
...  
Keyword(s):  
Thermal Cycling ◽  
Flip Chip ◽  
Thermal Power ◽  
Three Dimensional ◽  
Power Cycling ◽  
Die Stress ◽  
Test Chips ◽  
Resistance Data ◽  
Critical Locations

In the current work, we have extended our past studies on Flip Chip Ceramic Ball Grid Array (FC-BGA) microprocessor packaging configurations to investigate in-situ die stress variation during thermal and power cycling. The utilized (111) silicon sensor rosettes were able to measure the complete three-dimensional stress state (all 6 stress components) at each sensor site being monitored by the data acquisition hardware. The test chips had dimensions of 20 × 20 mm, and 3600 lead free solder interconnects (full area array) were used to connect the chips to high CTE ceramic chip carriers. A unique package carrier was developed to allow measurement of the die stresses in the FC-CBGA components under thermal and power cycling loads without inducing any additional mechanical loadings. Initial experiments consisted of measuring the die stress levels while the components were subjected to a slow (quasi-static) temperature changes from 0 to 100 C. In later testing, long term thermal cycling of selected parts was performed from 0 to 100 C (40 minute cycle, 10 minute ramps and dwells). After various durations of cycling, the sensor resistances at critical locations on the die device surface (e.g. die center and die corners) were recorded. From the resistance data, the stresses at each site were calculated and plotted versus time. Finally, thermal and power cycling of selected parts was performed, and in-situ measurements of the transient die stress variations were performed. Power cycling was implemented by exciting the on-chip heaters on the test chips with various power levels. During the thermal/power cycling, sensor resistances at critical locations on the die device surface (e.g. die center and die corners) were recorded continuously. From the resistance data, the stresses at each site were calculated and plotted versus time.

Interconnect Fatigue Failure Parameter Isolation for Power Device Reliability Prediction in Alternative Accelerated Mechanical Cycling Test

2019 ◽  
Vol 141 (3) ◽  
Author(s):  
Mahsa Montazeri ◽  
Cody J. Marbut ◽  
David Huitink
Keyword(s):  
Thermal Cycling ◽  
Flip Chip ◽  
Mechanical Stresses ◽  
Power Device ◽  
Reliability Test ◽  
Test Duration ◽  
Force Frequency ◽  
Solder Interconnects ◽  
Mechanical Cycling ◽  
Power Cycling

In this work, a rapid and low-cost accelerated reliability test methodology which was designed to simulate mechanical stresses induced in flip–chip bonded devices during the thermal cycling reliability test under isothermal conditions, is introduced and demonstrated using power device analogous test chips. By stressing these devices in a controlled environment, mechanical stresses become decoupled from the design and temperature, such that useful lifetimes can be predictable. Mechanical shear stress was cyclically applied directly to device relevant, flip–chip solder interconnects while monitoring for failure. Herein, finite element analysis (FEA) is used to extract various damage metrics of different solder materials, including PbSn37/63, SAC305, and nanosilver, in both thermal operation and the introduced alternative mechanical testing conditions. Plastic work density and strain are calculated in the critical solder interconnects as factors that indicate the amount of the damage accumulation per cycle during the mechanical cycling, thermal cycling, and power cycling tests. The number of cycles to failure for each test was calculated using the fatigue life model developed by Darveaux for eutectic PbSn solder, while for SAC305 Syed's method was used, and for nanosilver, the Knoerr et al. equations are applied. The effects of environmental temperature and shearing force frequency were studied for the mechanical cycling reliability test, where a modified Norris–Landzberg equation for mechanical cycling tests was explored using the simulation results. Finally, comparing the mechanical cycling with the equivalent thermal cycling and power cycling demonstrated a significant reduction in required test duration to achieve a reliability estimation.

Excellent thermal-cycling stability caused by aging in Fe-doped (Ba0.85Ca0.15)(Ti0.9Zr0.1)O3 lead-free piezoceramic

2021 ◽  
Vol 202 ◽  
pp. 113990
Author(s):  
Yanshuang Hao ◽  
Liqiang He ◽  
Shuai Ren ◽  
Yuanchao Ji ◽  
Xiaobing Ren
Keyword(s):  
Thermal Cycling ◽  
Cycling Stability ◽  
Lead Free
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