CMOS compatible thin wafer processing using temporary mechanical wafer, adhesive and laser release of thin chips/wafers for 3D integration

Author(s):  
Bing Dang ◽  
Paul Andry ◽  
Cornelia Tsang ◽  
Joana Maria ◽  
Robert Polastre ◽  
...  
2015 ◽  
Vol 2015 (1) ◽  
pp. 000035-000040 ◽  
Author(s):  
Adam Beece ◽  
Dragomir Milojevic ◽  
Geert van der Plas ◽  
Rod Augur ◽  
Michelle Sureddin ◽  
...  

The traditional drivers for the adoption of 3D integration technology are footprint, power, performance, and/or bandwidth gains at the expense of increased cost due to additional wafer processing, dies stacking and 3D test. However, for larger dies in cutting edge technology, total system cost can be reduced by leveraging heterogeneous 3D stacking, if it is done correctly. This paper presents a model which allows comparing the cost of moving a traditionally designed chip at given advanced node (in 2D) to an implementation in the next generation technology node using heterogeneous face-to-face 3D stacking. With this model we show that 3D integration scheme can be driven by cost savings. This is possible in a world where CMOS cost per transistor continues to improve because other components that are required in large SoCs, notably analog and I/O functionality, do not. The proposed model is used to evaluate the cost impact of iterating a 14nm SoC into a 10nm SoC (traditional scaling) compared to a 3D implementation that pulls the analog and I/O circuitry into a cheap 28nm top die. The cost impact of such a transition is evaluated for different starting SoC sizes (from 100 to 400mm2), differing area percentages of analog I/O (15–40% of the total 2D area), different increases in complexity (measured in implicit number of transistors). In the most realistic and representative cases studied, 28–10nm heterogeneous 3D stack reduced large-die package cost from 5% to 10%. Sensitivity analysis to various model parameters show that these savings are fairly robust, persisting through various scenarios unfavorable to this integration technique.


2012 ◽  
Vol 18 (7-8) ◽  
pp. 1065-1075 ◽  
Author(s):  
Viorel Dragoi ◽  
Eric Pabo ◽  
Jürgen Burggraf ◽  
Gerald Mittendorfer

Author(s):  
Shireen Warnock ◽  
Chang-Lee Chen ◽  
Jeffrey Knechtl ◽  
Richard Molnar ◽  
Donna-Ruth Yost ◽  
...  

2012 ◽  
Vol 2012 (DPC) ◽  
pp. 001755-001782
Author(s):  
Thorsten Matthias ◽  
Eric Pabo ◽  
Juergen Burggraf ◽  
Daniel Burgstaller ◽  
Markus Wimplinger ◽  
...  

Thin wafer processing is a critical technology for TSV manufacturing and 3D integration. Thin wafer processing allows to reduce the aspect ratio of the vias, thereby reducing the total processing cost and enables ultra-thin packages for handheld applications. Temporary bonding to a rigid support carrier and debonding after backside processing have been used for thin wafer handling/processing for many years. However, so far all the debonding methods imposed severe limitations on the manufacturability. For light induced debonding the carrier had to be transparent and for solvent based debonding the carrier had to be perforated. For thermally induced debonding, “slide-off debonding” the debonding temperature had to be below the reflow temperature of the solder bumps, which limited the maximal process temperature of the adhesive. In this paper we describe a new debonding method at room temperature. This new technology decouples the debonding process from the adhesive properties, which creates a de facto material independent debonding standard. As the debonding process does not rely on the adhesive properties a major boundary for adhesive engineering has been removed. The debonding method is compatible with bumps or pillars in the bond interface as well as on the backside of the wafer stack. No force is applied on the bumps during debonding which results in very high yields.


2010 ◽  
Vol 130 (5) ◽  
pp. 170-175
Author(s):  
Tsukasa Fujimori ◽  
Hideaki Takano ◽  
Yuko Hanaoka ◽  
Yasushi Goto

2018 ◽  
Author(s):  
Wentao Qin ◽  
Scott Donaldson ◽  
Dan Rogers ◽  
Lahcen Boukhanfra ◽  
Julien Thiefain ◽  
...  

Abstract Many semiconductor products are manufactured with mature technologies involving the uses of aluminum (Al) lines and tungsten (W) vias. High resistances of the vias were sometimes observed only after electrical or thermal stress. A layer of Ti oxide was found on such a via. In the wafer processing, the post W chemical mechanical planarization (WCMP) cleaning left residual W oxide on the W plugs. Ti from the overlaying metal line spontaneously reduced the W oxide, through which Ti oxide formed. Compared with W oxide, the Ti oxide has a larger formation enthalpy, and the valence electrons of Ti are more tightly bound to the O ion cores. As a result, the Ti oxide is more resistive than the W oxide. Consequently, the die functioned well in the first test in the fab, but the via resistance increased significantly after a thermal stress, which led to device failure in the second test. The NH4OH concentration was therefore increased to more effectively remove residual W oxide, which solved the problem. The thermal stress had prevented the latent issue from becoming a more costly field failure.


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