New fluxless bonding process in air using Sn-Bi with Au cap

2004 ◽  
Author(s):  
Dongwook Kim ◽  
Chin C. Lee
Keyword(s):  
Bonding Process ◽  
Fluxless Bonding

A fluxless bonding process using AuSn or Indium for a miniaturized hermetic package

2009 ◽  
Author(s):  
Marion Volpert ◽  
Christophe Kopp ◽  
Julien Routin ◽  
Adrien Gasse ◽  
Stephane Bernabe ◽  
...  
Keyword(s):  
Bonding Process ◽  
Fluxless Bonding ◽  
Hermetic Package

Fluxless bonding process in air using Sn–Bi–Au design

2004 ◽  
Vol 372 (1-2) ◽  
pp. 261-268 ◽  
Author(s):  
Dongwook Kim ◽  
Chin C. Lee
Keyword(s):  
Bonding Process ◽  
Fluxless Bonding

Indium-Copper Multilayer Composite Solder for Fluxless Bonding

1995 ◽  
Vol 390 ◽  
Author(s):  
Chin C. Lee ◽  
Yi-Chia Chen
Keyword(s):  
Composite Solder ◽  
Alloy Composition ◽  
High Vacuum ◽  
Bonding Process ◽  
Microscope Examination ◽  
Specific Design ◽  
Acoustic Microscope ◽  
Fluxless Bonding ◽  
Pure Indium ◽  
Scanning Acoustic Microscope

ABSTRACTA 200°C fluxless process is developed to produce In-Cu joints. The fluxless feature is achieved by the prevention of indium oxidation during the solder fabrication and the bonding process. Indium and copper are deposited on an object in high vacuum to inhibit indium oxidation. Copper interacts with indium to form CuIn compound that further protects the inner indium from oxidation. For a specific design, the resulting joints consist of mainly CuIn intermetallic grains surrounded by a small amount of pure indium as revealed by SEM with EDX. Scanning acoustic microscope examination indicates that the joints are nearly void-free. This technology enables versatile control of the alloy composition, thus leading to several remelting temperatures and various physical properties.

Analysis of Two Electrical Failures Caused by Die Attach of Exposed Pad Package

2014 ◽  
Author(s):  
Jinglong Li ◽  
Motohiko Masuda ◽  
Yi Che ◽  
Miao Wu
Keyword(s):  
Bonding Process ◽  
Die Attach ◽  
Die Bonding ◽  
Generic Analysis

Abstract Die attach is well known in die bonding process. Its electrical character is simple. But some failures caused by die attach are not so simple. And it is not proper to analyze by a generic analysis flow. The analysis of two failures caused by die attach are presented in this paper.

Failure Analysis on Power Trench MOSFET Devices with Copper Wire Bonds

2011 ◽  
Author(s):  
Huixian Wu ◽  
Arthur Chiang ◽  
David Le ◽  
Win Pratchayakun
Keyword(s):  
Failure Analysis ◽  
Copper Wire ◽  
New Technology ◽  
Analytical Techniques ◽  
Wire Bonding ◽  
Bonding Process ◽  
Wire Bonds ◽  
Copper Wire Bonding ◽  
Wet Chemical ◽  
Microelectronic Components

Abstract With gold prices steadily going up in recent years, copper wire has gained popularity as a means to reduce cost of manufacturing microelectronic components. Performance tradeoff aside, there is an urgent need to thoroughly study the new technology to allay any fear of reliability compromise. Evaluation and optimization of copper wire bonding process is critical. In this paper, novel failure analysis and analytical techniques are applied to the evaluation of copper wire bonding process. Several FA/analytical techniques and FA procedures will be discussed in detail, including novel laser/chemical/plasma decapsulation, FIB, wet chemical etching, reactive ion etching (RIE), cross-section, CSAM, SEM, EDS, and a combination of these techniques. Two case studies will be given to demonstrate the use of these techniques in copper wire bonded devices.

Sign in / Sign up

Export Citation Format

Share Document