Self-Aligned n-channel MOSFET on InP and In0.53Ga0.47As Using Physical Vapor Deposition HfO2 and Silicon Interface Passivation Layer

2008 ◽  
Author(s):  
InJo Ok ◽  
H. Kim ◽  
M. Zhang ◽  
F. Zhu ◽  
H. Zhao ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Passivation Layer ◽  
Interface Passivation ◽  
Silicon Interface

Wetting Layer and Formation of Metal - Semiconductor Interface

2018 ◽  
Vol 386 ◽  
pp. 9-14 ◽  
Author(s):  
Nikolay I. Plusnin
Keyword(s):  
Vapor Deposition ◽  
Electron Spectroscopy ◽  
Physical Vapor Deposition ◽  
Room Temperature ◽  
Complex Analysis ◽  
Wetting Layer ◽  
Semiconductor Interface ◽  
Vapor Phase Deposition ◽  
Silicon Interface ◽  
Electron Energy Loss

A wetting layer with a nanophase structure was detected and identified before the first bulk phase during the formation of the metal-silicon interface by vapor-phase deposition at room temperature of the substrate. This became possible due to the developed technique for complex analysis of the structural-chemical state of the surface/ interface with help of Auger electron spectroscopy and electron energy loss spectroscopy, and also due to the method of physical vapor deposition at low temperature of vapor. The discovery this wetting layer and stage of its formation fundamentally changes the approach to the formation of contact between metal and silicon.

scholarly journals From atomic-scale interfaces - to new nanomaterials

2018 ◽  
Vol 1 (4) ◽  
Author(s):  
Nikolay Plusnin
Keyword(s):  
Transition Metal ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Experimental Results ◽  
Atomic Scale ◽  
New Type ◽  
Low Dimensional ◽  
Silicon Interface

The problem of the synthesis of new type nanomaterials in the form of nanocoatings with subnanometric heterogeneity has been formulated. It has been presented an analysis of influences of physical vapor deposition in ultrahigh vacuum on the process of intermixing a film with a substrate, including the results, which has been obtained under the formation of transition metal – silicon interface. The generalization of the obtained experimental results allowed to develop an approach to the development of new nanocoatings with low-dimensional heterogeneity. The principles of constructing such low-dimensional nanocoatings, their properties and their possible applications are considered. 

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