Metal-oxide-semiconductor capacitors on GaAs with high-k gate oxide and amorphous silicon interface passivation layer

S. Koveshnikov; W. Tsai; I. Ok; J. C. Lee; V. Torkanov; M. Yakimov; S. Oktyabrsky

doi:10.1063/1.2164327

Metal-oxide-semiconductor capacitors on GaAs with high-k gate oxide and amorphous silicon interface passivation layer

Applied Physics Letters ◽

10.1063/1.2164327 ◽

2006 ◽

Vol 88 (2) ◽

pp. 022106 ◽

Cited By ~ 176

Author(s):

S. Koveshnikov ◽

W. Tsai ◽

I. Ok ◽

J. C. Lee ◽

V. Torkanov ◽

...

Keyword(s):

Metal Oxide ◽

Amorphous Silicon ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

High K ◽

Interface Passivation ◽

Silicon Interface

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Depletion-mode GaAs metal-oxide-semiconductor field-effect transistor with amorphous silicon interface passivation layer and thin HfO2 gate oxide

Applied Physics Letters ◽

10.1063/1.2762295 ◽

2007 ◽

Vol 91 (4) ◽

pp. 043507 ◽

Cited By ~ 9

Author(s):

F. Zhu ◽

S. Koveshnikov ◽

I. Ok ◽

H. S. Kim ◽

M. Zhang ◽

...

Keyword(s):

Metal Oxide ◽

Amorphous Silicon ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Interface Passivation ◽

Silicon Interface

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A high performance In0.53Ga0.47As metal-oxide-semiconductor field effect transistor with silicon interface passivation layer

Applied Physics Letters ◽

10.1063/1.3068752 ◽

2009 ◽

Vol 94 (1) ◽

pp. 013511 ◽

Cited By ~ 13

Author(s):

Feng Zhu ◽

Han Zhao ◽

I. Ok ◽

H. S. Kim ◽

J. Yum ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Interface Passivation ◽

Silicon Interface

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Influence of the substrate orientation on the electrical and material properties of GaAs metal-oxide-semiconductor capacitors and self-aligned transistors using HfO2 and silicon interface passivation layer

Applied Physics Letters ◽

10.1063/1.2917823 ◽

2008 ◽

Vol 92 (20) ◽

pp. 202908 ◽

Cited By ~ 10

Author(s):

InJo Ok ◽

H. Kim ◽

M. Zhang ◽

F. Zhu ◽

S. Park ◽

...

Keyword(s):

Metal Oxide ◽

Material Properties ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Substrate Orientation ◽

Interface Passivation ◽

Silicon Interface

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Effects of Anneal and Silicon Interface Passivation Layer Thickness on Device Characteristics of In[sub 0.53]Ga[sub 0.47]As Metal-Oxide-Semiconductor Field-Effect Transistors

Electrochemical and Solid-State Letters ◽

10.1149/1.3074298 ◽

2009 ◽

Vol 12 (4) ◽

pp. H131 ◽

Cited By ~ 5

Author(s):

Feng Zhu ◽

Han Zhao ◽

I. Ok ◽

H. S. Kim ◽

J. Yum ◽

...

Keyword(s):

Metal Oxide ◽

Layer Thickness ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Interface Passivation ◽

Silicon Interface

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Optimization of electrical characteristics of gadolinium (Gd[sub 2]O[sub 3]) incorporated HfO[sub 2] GaAs n-type metal-oxide semiconductor capacitors with silicon-interface-passivation layer

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2890708 ◽

2008 ◽

Vol 26 (2) ◽

pp. 624 ◽

Cited By ~ 4

Author(s):

Sung Il Park ◽

Injo Ok ◽

Hyoung-Sub Kim ◽

Feng Zhu ◽

Manhong Zhang ◽

...

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Interface Passivation ◽

Silicon Interface

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Metal-Oxide-Semiconductor Devices on GaAs with High-k Dielectric and MOCVD Grown ZnO Interface Passivation Layer

2011 International Conference on Nanoscience, Technology and Societal Implications ◽

10.1109/nstsi.2011.6111800 ◽

2011 ◽

Cited By ~ 1

Author(s):

Souvik Kundu ◽

Pallab Banerji

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

High K ◽

High K Dielectric ◽

Interface Passivation

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Optimization of electrical characteristics of TiO2-incorporated HfO2 n-type doped gallium arsenide metal oxide semiconductor capacitor with silicon interface passivation layer

Applied Physics Letters ◽

10.1063/1.2775048 ◽

2007 ◽

Vol 91 (8) ◽

pp. 082908 ◽

Cited By ~ 5

Author(s):

Sung Il Park ◽

Injo Ok ◽

Hyoung-Sub Kim ◽

Feng Zhu ◽

Manhong Zhang ◽

...

Keyword(s):

Gallium Arsenide ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Interface Passivation ◽

Silicon Interface ◽

Metal Oxide Semiconductor Capacitor

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Self-aligned n-channel GaAs metal–oxide–semiconductor field-effect transistors (MOSFETs) using HfO2 and silicon interface passivation layer: Post-metal annealing optimization

Microelectronic Engineering ◽

10.1016/j.mee.2008.09.017 ◽

2009 ◽

Vol 86 (3) ◽

pp. 291-294 ◽

Cited By ~ 2

Author(s):

InJo Ok ◽

H. Kim ◽

M. Zhang ◽

F. Zhu ◽

S. Park ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Interface Passivation ◽

Silicon Interface

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Temperature effects of Si interface passivation layer deposition on high-k III-V metal-oxide-semiconductor characteristics

Applied Physics Letters ◽

10.1063/1.2790780 ◽

2007 ◽

Vol 91 (13) ◽

pp. 132104 ◽

Cited By ~ 15

Author(s):

InJo Ok ◽

H. Kim ◽

M. Zhang ◽

F. Zhu ◽

S. Park ◽

...

Keyword(s):

Metal Oxide ◽

Temperature Effects ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Layer Deposition ◽

High K ◽

Interface Passivation

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Interface engineering with an MOCVD grown ZnO interface passivation layer for ZrO2–GaAs metal–oxide–semiconductor devices

Solid State Communications ◽

10.1016/j.ssc.2011.09.033 ◽

2011 ◽

Vol 151 (24) ◽

pp. 1881-1884 ◽

Cited By ~ 25

Author(s):

Souvik Kundu ◽

T. Shripathi ◽

P. Banerji

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Interface Engineering ◽

Interface Passivation

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