Self-Aligned n- and p-channel GaAs MOSFETs on Undoped and P-type Substrates Using HfO2 and Silicon Interface Passivation Layer

A high performance In0.53Ga0.47As metal-oxide-semiconductor field effect transistor with silicon interface passivation layer

Applied Physics Letters ◽

10.1063/1.3068752 ◽

2009 ◽

Vol 94 (1) ◽

pp. 013511 ◽

Cited By ~ 13

Author(s):

Feng Zhu ◽

Han Zhao ◽

I. Ok ◽

H. S. Kim ◽

J. Yum ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Interface Passivation ◽

Silicon Interface

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Influence of the substrate orientation on the electrical and material properties of GaAs metal-oxide-semiconductor capacitors and self-aligned transistors using HfO2 and silicon interface passivation layer

Applied Physics Letters ◽

10.1063/1.2917823 ◽

2008 ◽

Vol 92 (20) ◽

pp. 202908 ◽

Cited By ~ 10

Author(s):

InJo Ok ◽

H. Kim ◽

M. Zhang ◽

F. Zhu ◽

S. Park ◽

...

Keyword(s):

Metal Oxide ◽

Material Properties ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Substrate Orientation ◽

Interface Passivation ◽

Silicon Interface

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Effects of Anneal and Silicon Interface Passivation Layer Thickness on Device Characteristics of In[sub 0.53]Ga[sub 0.47]As Metal-Oxide-Semiconductor Field-Effect Transistors

Electrochemical and Solid-State Letters ◽

10.1149/1.3074298 ◽

2009 ◽

Vol 12 (4) ◽

pp. H131 ◽

Cited By ~ 5

Author(s):

Feng Zhu ◽

Han Zhao ◽

I. Ok ◽

H. S. Kim ◽

J. Yum ◽

...

Keyword(s):

Metal Oxide ◽

Layer Thickness ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Interface Passivation ◽

Silicon Interface

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Optimization of electrical characteristics of gadolinium (Gd[sub 2]O[sub 3]) incorporated HfO[sub 2] GaAs n-type metal-oxide semiconductor capacitors with silicon-interface-passivation layer

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2890708 ◽

2008 ◽

Vol 26 (2) ◽

pp. 624 ◽

Cited By ~ 4

Author(s):

Sung Il Park ◽

Injo Ok ◽

Hyoung-Sub Kim ◽

Feng Zhu ◽

Manhong Zhang ◽

...

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Interface Passivation ◽

Silicon Interface

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Metal-oxide-semiconductor capacitors on GaAs with high-k gate oxide and amorphous silicon interface passivation layer

Applied Physics Letters ◽

10.1063/1.2164327 ◽

2006 ◽

Vol 88 (2) ◽

pp. 022106 ◽

Cited By ~ 176

Author(s):

S. Koveshnikov ◽

W. Tsai ◽

I. Ok ◽

J. C. Lee ◽

V. Torkanov ◽

...

Keyword(s):

Metal Oxide ◽

Amorphous Silicon ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

High K ◽

Interface Passivation ◽

Silicon Interface

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Optimization of electrical characteristics of TiO2-incorporated HfO2 n-type doped gallium arsenide metal oxide semiconductor capacitor with silicon interface passivation layer

Applied Physics Letters ◽

10.1063/1.2775048 ◽

2007 ◽

Vol 91 (8) ◽

pp. 082908 ◽

Cited By ~ 5

Author(s):

Sung Il Park ◽

Injo Ok ◽

Hyoung-Sub Kim ◽

Feng Zhu ◽

Manhong Zhang ◽

...

Keyword(s):

Gallium Arsenide ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Interface Passivation ◽

Silicon Interface ◽

Metal Oxide Semiconductor Capacitor

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Improved Process Stability on an Extremely Thin Amorphous/Crystalline Silicon Interface Passivation Layer by Using Predeposition on the Chamber Wall

ECS Journal of Solid State Science and Technology ◽

10.1149/2.0041808jss ◽

2018 ◽

Vol 7 (8) ◽

pp. P355-P361 ◽

Cited By ~ 2

Author(s):

Yu-Lin Hsieh ◽

Ching-Lin Tseng ◽

Chien-Chieh Lee ◽

Yiin-Kuen Fuh ◽

Jenq-Yang Chang ◽

...

Keyword(s):

Crystalline Silicon ◽

Passivation Layer ◽

Chamber Wall ◽

Process Stability ◽

Interface Passivation ◽

Silicon Interface

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Self-aligned n-channel GaAs metal–oxide–semiconductor field-effect transistors (MOSFETs) using HfO2 and silicon interface passivation layer: Post-metal annealing optimization

Microelectronic Engineering ◽

10.1016/j.mee.2008.09.017 ◽

2009 ◽

Vol 86 (3) ◽

pp. 291-294 ◽

Cited By ~ 2

Author(s):

InJo Ok ◽

H. Kim ◽

M. Zhang ◽

F. Zhu ◽

S. Park ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Interface Passivation ◽

Silicon Interface

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Self-Aligned n-channel MOSFET on InP and In0.53Ga0.47As Using Physical Vapor Deposition HfO2 and Silicon Interface Passivation Layer

2008 Device Research Conference ◽

10.1109/drc.2008.4800749 ◽

2008 ◽

Cited By ~ 1

Author(s):

InJo Ok ◽

H. Kim ◽

M. Zhang ◽

F. Zhu ◽

H. Zhao ◽

...

Keyword(s):

Vapor Deposition ◽

Physical Vapor Deposition ◽

Passivation Layer ◽

Interface Passivation ◽

Silicon Interface

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Characteristics of liquid phase deposited SiO2on (NH4)2S-treated GaAs with an ultrathin Si interface passivation layer

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.056502 ◽

2014 ◽

Vol 53 (5) ◽

pp. 056502 ◽

Cited By ~ 3

Author(s):

Ming-Kwei Lee ◽

Chih-Feng Yen

Keyword(s):

Liquid Phase ◽

Passivation Layer ◽

Interface Passivation

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