Ion implantation for unalloyed ohmic contacts to AlGaN/GaN HEMTs

2004 ◽  
Author(s):  
H. Yu ◽  
L. McCarthy ◽  
S. Rajan ◽  
S. Keller ◽  
S.P. Denbaars ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Ohmic Contacts ◽  
Gan Hemts

scholarly journals Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature

2006 ◽  
Vol 27 (4) ◽  
pp. 205-207 ◽  
Author(s):  
F. Recht ◽  
L. McCarthy ◽  
S. Rajan ◽  
A. Chakraborty ◽  
C. Poblenz ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Ohmic Contacts ◽  
Annealing Temperature ◽  
Gan Hemts ◽  
Activation Annealing

On a two-layer Si3N4/SiO2 dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs

2016 ◽  
Vol 50 (8) ◽  
pp. 1117-1121 ◽  
Author(s):  
S. S. Arutyunyan ◽  
A. Yu. Pavlov ◽  
B. Yu. Pavlov ◽  
K. N. Tomosh ◽  
Yu. V. Fedorov
Keyword(s):  
Ohmic Contacts ◽  
Low Resistance ◽  
Gan Hemts

Micro-structural evaluation of Ti/Al/Ni/Au ohmic contacts with different Ti/Al thicknesses in AlGaN/GaN HEMTs

2014 ◽  
Vol 183 ◽  
pp. 47-53 ◽  
Author(s):  
Somna S. Mahajan ◽  
Anuradha Dhaul ◽  
Robert Laishram ◽  
Sonalee Kapoor ◽  
Seema Vinayak ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Structural Evaluation ◽  
Gan Hemts

scholarly journals Electron Concentration Limit in Ge Doped by Ion Implantation and Flash Lamp Annealing

Materials ◽  
2020 ◽  
Vol 13 (6) ◽  
pp. 1408
Author(s):  
Slawomir Prucnal ◽  
Jerzy Żuk ◽  
René Hübner ◽  
Juanmei Duan ◽  
Mao Wang ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Electron Concentration ◽  
Ohmic Contacts ◽  
Protective Layer ◽  
Flash Lamp ◽  
Concentration Limit ◽  
Recrystallization Process ◽  
Ion Energy ◽  
Silicon Based ◽  
Effective Carrier

Controlled doping with an effective carrier concentration higher than 1020 cm−3 is a key challenge for the full integration of Ge into silicon-based technology. Such a highly doped layer of both p- and n type is needed to provide ohmic contacts with low specific resistance. We have studied the effect of ion implantation parameters i.e., ion energy, fluence, ion type, and protective layer on the effective concentration of electrons. We have shown that the maximum electron concentration increases as the thickness of the doping layer decreases. The degradation of the implanted Ge surface can be minimized by performing ion implantation at temperatures that are below −100 °C with ion flux less than 60 nAcm−2 and maximum ion energy less than 120 keV. The implanted layers are flash-lamp annealed for 20 ms in order to inhibit the diffusion of the implanted ions during the recrystallization process.

Deep submicron AlGaN/GaN HEMTs with ion implanted source/drain regions and non-alloyed ohmic contacts

2007 ◽  
Vol 43 (25) ◽  
pp. 1466 ◽  
Author(s):  
Y. Pei ◽  
F. Recht ◽  
N. Fichtenbaum ◽  
S. Keller ◽  
S.P. DenBaars ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Deep Submicron ◽  
Gan Hemts ◽  
Ion Implanted

InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz

2012 ◽  
Vol 33 (7) ◽  
pp. 988-990 ◽  
Author(s):  
Yuanzheng Yue ◽  
Zongyang Hu ◽  
Jia Guo ◽  
Berardi Sensale-Rodriguez ◽  
Guowang Li ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Gan Hemts
Sign in / Sign up

Export Citation Format

Share Document