InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz

2012 ◽  
Vol 33 (7) ◽  
pp. 988-990 ◽  
Author(s):  
Yuanzheng Yue ◽  
Zongyang Hu ◽  
Jia Guo ◽  
Berardi Sensale-Rodriguez ◽  
Guowang Li ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Gan Hemts

scholarly journals Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature

2006 ◽  
Vol 27 (4) ◽  
pp. 205-207 ◽  
Author(s):  
F. Recht ◽  
L. McCarthy ◽  
S. Rajan ◽  
A. Chakraborty ◽  
C. Poblenz ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Ohmic Contacts ◽  
Annealing Temperature ◽  
Gan Hemts ◽  
Activation Annealing

On a two-layer Si3N4/SiO2 dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs

2016 ◽  
Vol 50 (8) ◽  
pp. 1117-1121 ◽  
Author(s):  
S. S. Arutyunyan ◽  
A. Yu. Pavlov ◽  
B. Yu. Pavlov ◽  
K. N. Tomosh ◽  
Yu. V. Fedorov
Keyword(s):  
Ohmic Contacts ◽  
Low Resistance ◽  
Gan Hemts

Micro-structural evaluation of Ti/Al/Ni/Au ohmic contacts with different Ti/Al thicknesses in AlGaN/GaN HEMTs

2014 ◽  
Vol 183 ◽  
pp. 47-53 ◽  
Author(s):  
Somna S. Mahajan ◽  
Anuradha Dhaul ◽  
Robert Laishram ◽  
Sonalee Kapoor ◽  
Seema Vinayak ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Structural Evaluation ◽  
Gan Hemts

Deep submicron AlGaN/GaN HEMTs with ion implanted source/drain regions and non-alloyed ohmic contacts

2007 ◽  
Vol 43 (25) ◽  
pp. 1466 ◽  
Author(s):  
Y. Pei ◽  
F. Recht ◽  
N. Fichtenbaum ◽  
S. Keller ◽  
S.P. DenBaars ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Deep Submicron ◽  
Gan Hemts ◽  
Ion Implanted

Electrical Comparison of Ta/Ti/Al/Mo/Au and Ti/Al/Mo/Au Ohmic Contacts on Undoped GaN HEMTs Structure with AlN Interlayer

2007 ◽  
Vol 17 (01) ◽  
pp. 85-89 ◽  
Author(s):  
Yunju Sun ◽  
Lester F. Eastman
Keyword(s):  
Contact Resistance ◽  
Electron Mobility ◽  
Ohmic Contacts ◽  
High Electron Mobility Transistor ◽  
Metal Contact ◽  
High Electron ◽  
Transfer Resistance ◽  
High Electron Mobility ◽  
Hemt Structure ◽  
Gan Hemts

A significant improvement of contact transfer resistance on undoped GaN/AlGaN/AlN (10 Å)/ GaN high electron mobility transistor (HEMT) structure was demonstrated using a Ta/Ti/Al/Mo/Au metallization scheme compared to a Ti/Al/Mo/Au metallization scheme. A contact resistance as low as 0.16 ± 0.03 ohm - mm was achieved by rapid thermal annealing of evaporated Ta (125 Å)/ Ti (150 Å)/ Al (900 Å)/ Mo (400 Å)/ Au (500 Å) metal contact at 700 °C for 1 min followed by 800 °C for 30 sec in a N 2 ambient. An excellent edge acuity was also demonstrated for the annealed Ta/Ti/Al/Mo/Au ohmic contacts.

A Comparative Optimization of Electrical Properties and Surface Morphology of Ti/Al/Ta/Au Ohmic Contacts in AlGaN/GaN HEMTs on Si(111), Sapphire, 4H-SiC Substrates

2012 ◽  
Vol 538-541 ◽  
pp. 2207-2210
Author(s):  
Sung Jin Cho ◽  
Cong Wang ◽  
Nam Young Kim
Keyword(s):  
Surface Morphology ◽  
Sapphire Substrate ◽  
Ohmic Contact ◽  
Annealing Time ◽  
Ohmic Contacts ◽  
Annealing Temperature ◽  
Contact Process ◽  
Annealing Temperatures ◽  
Ohmic Resistance ◽  
Gan Hemts

In the process of characterizing AlGaN/GaN HEMTs on Si (111), Sapphire, 4H-SiC substrates, various Rapid Thermal Annealing (RTA) conditions for the Ti/Al/Ta/Au ohmic contact process and the resulting surface analysis have been investigated. In order to achieve a low ohmic contact resistance (RC) and a high quality surface morphology, we tested seven steps (800 °C to 920 °C) annealing temperatures and two steps (15, 30 sec) annealing times. According to these annealing temperatures and times, the optimal ohmic resistance of 3.62 × 10-6 Ohm • cm2 on Si(111) substrate, 9.44 × 10-6 Ohm • cm2 on Sapphire substrate and 1.24 × 10-6 Ohm • cm2 on 4H-SiC substrate are obtained at an annealing temperature of 850 °C and an annealing time of 30 sec, 800 °C and an annealing time of 30 sec and 900 °C and an annealing time of 30 sec, respectively. The surface morphologies of the ohmic contact metallization at different annealing temperatures are measured using an Atomic Force Microscope (AFM). AFM morphology Root Mean Square (RMS) level determines the relationship of the annealing temperature and the annealing time for all of the samples. According to these annealing temperatures and times, the optimal ohmic surface RMS roughness of 13.4 nm on Si(111) substrate, 3.8 nm on Sapphire substrate and 2.9 nm on 4H-SiC substrate are obtained at an annealing temperature of 850 °C and an annealing time of 30 sec, 800 °C and an annealing time of 30 sec and 900 °C and an annealing time of 30 sec, respectively.

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