2016 16th International Workshop on Junction Technology (IWJT)
Latest Publications

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9781467399630, 9781467399654

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Challenges of 2-D (3-D) device doping process and doping profiling metrology

2016 16th International Workshop on Junction Technology (IWJT) ◽

10.1109/iwjt.2016.7486680 ◽

2016 ◽

Cited By ~ 1

Author(s):

Shu Qin

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Ohmic contacts for AlGaN/GaN HEMTs with artificially introduced uneven structures at metal/AlGaN interfaces

2016 16th International Workshop on Junction Technology (IWJT) ◽

10.1109/iwjt.2016.7486663 ◽

2016 ◽

Author(s):

Kazuo Tsutsui

Keyword(s):

Ohmic Contacts ◽

Gan Hemts

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Metal/Insulator/Semiconductor contacts for ultimately scaled CMOS nodes: Projected benefits and remaining challenges

2016 16th International Workshop on Junction Technology (IWJT) ◽

10.1109/iwjt.2016.7486664 ◽

2016 ◽

Cited By ~ 1

Author(s):

Julien Borrel ◽

Louis Hutin ◽

Helen Grampeix ◽

Emmanuel Nolot ◽

Magali Tessaire ◽

...

Keyword(s):

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Contacts ◽

Scaled Cmos

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Foreword

2016 16th International Workshop on Junction Technology (IWJT) ◽

10.1109/iwjt.2016.7486658 ◽

2016 ◽

Author(s):

Yu-Long Jiang ◽

Kazuya Ohuchi ◽

Shu Qin

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10 nm-deep n+/p and p+/n Ge junctions with high activation formed by ion implantation and Flash Lamp Annealing (FLA)

2016 16th International Workshop on Junction Technology (IWJT) ◽

10.1109/iwjt.2016.7486678 ◽

2016 ◽

Cited By ~ 4

Author(s):

H. Tanimura ◽

H. Kawarazaki ◽

K. Fuse ◽

M. Abe ◽

T. Yamada ◽

...

Keyword(s):

Ion Implantation ◽

Flash Lamp ◽

High Activation

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Ultra shallow junction (USJ) formation using plasma assisted doping on 3D devices structures

2016 16th International Workshop on Junction Technology (IWJT) ◽

10.1109/iwjt.2016.7486670 ◽

2016 ◽

Cited By ~ 1

Author(s):

YS Kim ◽

YounGi Hong ◽

Ivan Berry

Keyword(s):

Shallow Junction

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FinFET doping with PSG/BSG glass mimic doping by ultra low energy ion implantation

2016 16th International Workshop on Junction Technology (IWJT) ◽

10.1109/iwjt.2016.7486675 ◽

2016 ◽

Author(s):

Chuan He ◽

Lin Chen ◽

David Wei Zhang ◽

Junhua Hong ◽

Guangyao Jin ◽

...

Keyword(s):

Ion Implantation ◽

Low Energy

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Device performance improvement with implantation balancing energy contamination and productivity

2016 16th International Workshop on Junction Technology (IWJT) ◽

10.1109/iwjt.2016.7486672 ◽

2016 ◽

Author(s):

Yonggen He ◽

Guohui Cai ◽

Zuyuan Zhou ◽

Youfeng He ◽

Jingang Wu ◽

...

Keyword(s):

Performance Improvement ◽

Device Performance ◽

Balancing Energy

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2016 16th International Workshop on Junction Technology (IWJT) ◽

10.1109/iwjt.2016.7486660 ◽

2016 ◽

Download Full-text

Sponsorship

2016 16th International Workshop on Junction Technology (IWJT) ◽

10.1109/iwjt.2016.7486659 ◽

2016 ◽

Download Full-text

2016 16th International Workshop on Junction Technology (IWJT)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Challenges of 2-D (3-D) device doping process and doping profiling metrology

Ohmic contacts for AlGaN/GaN HEMTs with artificially introduced uneven structures at metal/AlGaN interfaces

Metal/Insulator/Semiconductor contacts for ultimately scaled CMOS nodes: Projected benefits and remaining challenges

Foreword

10 nm-deep n+/p and p+/n Ge junctions with high activation formed by ion implantation and Flash Lamp Annealing (FLA)

Ultra shallow junction (USJ) formation using plasma assisted doping on 3D devices structures

FinFET doping with PSG/BSG glass mimic doping by ultra low energy ion implantation

Device performance improvement with implantation balancing energy contamination and productivity

Table of contents

Sponsorship

Export Citation Format

2016 16th International Workshop on Junction Technology (IWJT)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Challenges of 2-D (3-D) device doping process and doping profiling metrology

Ohmic contacts for AlGaN/GaN HEMTs with artificially introduced uneven structures at metal/AlGaN interfaces

Metal/Insulator/Semiconductor contacts for ultimately scaled CMOS nodes: Projected benefits and remaining challenges

Foreword

10 nm-deep n+/p and p+/n Ge junctions with high activation formed by ion implantation and Flash Lamp Annealing (FLA)

Ultra shallow junction (USJ) formation using plasma assisted doping on 3D devices structures

FinFET doping with PSG/BSG glass mimic doping by ultra low energy ion implantation

Device performance improvement with implantation balancing energy contamination and productivity

Table of contents

Sponsorship

2016 16th International Workshop on Junction Technology (IWJT)
Latest Publications