Fabrication and characterization of Al/PMMA/Cr metal-insulator-metal diode

2017 ◽  
Author(s):  
Shilpi ◽  
Kapil Bhatt ◽  
Sandeep Kumar ◽  
Sandeep ◽  
C.C. Tripathi
Keyword(s):  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Fabrication And Characterization

Fabrication and characterization of AlN metal–insulator–semiconductor grown Si substrate

2017 ◽  
Vol 31 (33) ◽  
pp. 1750313
Author(s):  
A. Mahyuddin ◽  
A. Azrina ◽  
M. Z. Mohd Yusoff ◽  
Z. Hassan
Keyword(s):  
Molecular Beam ◽  
Unit Area ◽  
Effective Number ◽  
Si Substrate ◽  
Metal Insulator ◽  
Remarkable Effect ◽  
Capacitance Voltage ◽  
Effective Oxide Charge ◽  
Fabrication And Characterization

An experimental investigation was conducted to explore the effect of inserting a single AlGaN interlayer between AlN epilayer and GaN/AlN heterostructures on Si (111) grown by molecular beam epitaxy (MBE). It is confirmed from the scanning electron microscopy (SEM) that the AlGaN interlayer has a remarkable effect on reducing the tensile stress and dislocation density in AlN top layer. Capacitance–voltage (C–V) measurements were conducted to study the electrical properties of AlN/GaN heterostructures. While deriving the findings through the calculation it is suggested that the AlGaN interlayer can significantly reduce the value of effective oxide charge density and total effective number of charges per unit area which are [Formula: see text] and [Formula: see text], respectively.

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