Comparative study and characterization of atomic layer deposition Al2O3 films as metal-insulator-metal capacitor dielectric for GaAs hetero-junction bipolar transistor technology

Jiro Yota; Mehran Janani; Hal M. Banbrook; Patrick Rabinzohn; Markus Bosund

doi:10.1116/1.5112773

Comparative study and characterization of atomic layer deposition Al2O3 films as metal-insulator-metal capacitor dielectric for GaAs hetero-junction bipolar transistor technology

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.5112773 ◽

2019 ◽

Vol 37 (5) ◽

pp. 050903

Author(s):

Jiro Yota ◽

Mehran Janani ◽

Hal M. Banbrook ◽

Patrick Rabinzohn ◽

Markus Bosund

Keyword(s):

Atomic Layer Deposition ◽

Comparative Study ◽

Atomic Layer ◽

Bipolar Transistor ◽

Metal Insulator ◽

Layer Deposition ◽

Metal Insulator Metal ◽

Al2o3 Films

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In vacuo atomic layer deposition and electron tunneling characterization of ultrathin dielectric films for metal/insulator/metal tunnel junctions

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.5141078 ◽

2020 ◽

Vol 38 (4) ◽

pp. 040802 ◽

Cited By ~ 2

Author(s):

Judy Z. Wu ◽

Jagaran Acharya ◽

Ryan Goul

Keyword(s):

Atomic Layer Deposition ◽

Tunnel Junctions ◽

Electron Tunneling ◽

Atomic Layer ◽

Dielectric Films ◽

Metal Insulator ◽

Layer Deposition ◽

Metal Insulator Metal

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Characterization of atomic layer deposition HfO2, Al2O3, and plasma-enhanced chemical vapor deposition Si3N4 as metal–insulator–metal capacitor dielectric for GaAs HBT technology

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.4769207 ◽

2013 ◽

Vol 31 (1) ◽

pp. 01A134 ◽

Cited By ~ 57

Author(s):

Jiro Yota ◽

Hong Shen ◽

Ravi Ramanathan

Keyword(s):

Chemical Vapor Deposition ◽

Atomic Layer Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Atomic Layer ◽

Metal Insulator ◽

Layer Deposition ◽

Metal Insulator Metal

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Precision defect engineering of metal/insulator/metal diodes using atomic layer deposition to localize Ni impurities in Al2O3 tunnel barriers

Journal of Applied Physics ◽

10.1063/5.0045721 ◽

2021 ◽

Vol 129 (14) ◽

pp. 144502

Author(s):

Konner E. K. Holden ◽

Yitong Qi ◽

John F. Conley

Keyword(s):

Atomic Layer Deposition ◽

Atomic Layer ◽

Defect Engineering ◽

Metal Insulator ◽

Layer Deposition ◽

Metal Insulator Metal ◽

Tunnel Barriers

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Influence of precursor chemistry and growth temperature on the electrical properties of SrTiO3-based metal-insulator-metal capacitors grown by atomic layer deposition

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3525280 ◽

2011 ◽

Vol 29 (1) ◽

pp. 01AC04 ◽

Cited By ~ 6

Author(s):

H. García ◽

H. Castán ◽

A. Gómez ◽

S. Dueñas ◽

L. Bailón ◽

...

Keyword(s):

Electrical Properties ◽

Atomic Layer Deposition ◽

Growth Temperature ◽

Atomic Layer ◽

Precursor Chemistry ◽

Metal Insulator ◽

Layer Deposition ◽

Metal Insulator Metal

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Interface trap characterization of atomic layer deposition Al2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies

Journal of Applied Physics ◽

10.1063/1.4808093 ◽

2013 ◽

Vol 113 (20) ◽

pp. 204505 ◽

Cited By ~ 32

Author(s):

Christine M. Jackson ◽

Aaron R. Arehart ◽

Emre Cinkilic ◽

Brian McSkimming ◽

James S. Speck ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Deep Level ◽

Atomic Layer ◽

Interface Trap ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Layer Deposition

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Atomic Layer Deposition of High-k and Nanolaminate Dielectrics for Transparent Thin Film Transistors and Metal/Insulator/Metal Tunnel Diodes

ECS Meeting Abstracts ◽

10.1149/ma2011-01/22/1369 ◽

2011 ◽

Keyword(s):

Thin Film ◽

Atomic Layer Deposition ◽

Thin Film Transistors ◽

Atomic Layer ◽

Tunnel Diodes ◽

Metal Insulator ◽

Layer Deposition ◽

High K ◽

Metal Insulator Metal

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High-voltage metal-insulator-metal capacitor based on crystalline HfAlOxfilm grown by atomic layer deposition

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.5054848 ◽

2019 ◽

Vol 37 (1) ◽

pp. 011209 ◽

Cited By ~ 1

Author(s):

Michael Lisiansky ◽

Inna Popov ◽

Vladimir Uvarov ◽

Valentina Korchnoy ◽

Boris Meyler ◽

...

Keyword(s):

Atomic Layer Deposition ◽

High Voltage ◽

Atomic Layer ◽

Metal Insulator ◽

Layer Deposition ◽

Metal Insulator Metal

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Characterization of metal–ferroelectric–metal–insulator–semiconductor structures using ferroelectric Al-doped HfO2 thin films prepared by atomic-layer deposition with different O3 doses

Japanese Journal of Applied Physics ◽

10.7567/1347-4065/ab2c62 ◽

2019 ◽

Vol 58 (7) ◽

pp. 070907 ◽

Cited By ~ 3

Author(s):

So-Yeong Na ◽

So-Jung Yoon ◽

Seung-Youl Kang ◽

Seung-Eon Moon ◽

Sung-Min Yoon

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

Layer Deposition

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Composition influence on the physical and electrical properties of SrxTi1−xOy-based metal-insulator-metal capacitors prepared by atomic layer deposition using TiN bottom electrodes

Journal of Applied Physics ◽

10.1063/1.3246835 ◽

2009 ◽

Vol 106 (9) ◽

pp. 094101 ◽

Cited By ~ 50

Author(s):

N. Menou ◽

M. Popovici ◽

S. Clima ◽

K. Opsomer ◽

W. Polspoel ◽

...

Keyword(s):

Electrical Properties ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Metal Insulator ◽

Layer Deposition ◽

Metal Insulator Metal

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Electrical characteristics and step coverage of ZrO2films deposited by atomic layer deposition for through-silicon via and metal–insulator–metal applications

Japanese Journal of Applied Physics ◽

10.7567/jjap.55.016502 ◽

2015 ◽

Vol 55 (1) ◽

pp. 016502 ◽

Cited By ~ 2

Author(s):

Kyeong-Keun Choi ◽

Chan-Gyung Park ◽

Deok-kee Kim

Keyword(s):

Atomic Layer Deposition ◽

Atomic Layer ◽

Electrical Characteristics ◽

Metal Insulator ◽

Through Silicon Via ◽

Step Coverage ◽

Layer Deposition ◽

Metal Insulator Metal

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