scholarly journals Fabrication and characterization of NiO based metal−insulator−metal diode using Langmuir-Blodgett method for high frequency rectification

AIP Advances ◽  
2018 ◽  
Vol 8 (4) ◽  
pp. 045219 ◽  
Author(s):  
Ibrahim Azad ◽  
Manoj K. Ram ◽  
D. Yogi Goswami ◽  
Elias Stefanakos
Keyword(s):  
High Frequency ◽  
Metal Insulator ◽  
Langmuir Blodgett ◽  
Metal Insulator Metal ◽  
Fabrication And Characterization ◽  
Frequency Rectification

scholarly journals Characterization of 10,12-pentacosadiynoic acid Langmuir–Blodgett monolayers and their use in metal–insulator–metal tunnel devices

2014 ◽  
Vol 5 ◽  
pp. 2240-2247 ◽  
Author(s):  
Saumya Sharma ◽  
Mohamad Khawaja ◽  
Manoj K Ram ◽  
D Yogi Goswami ◽  
Elias Stefanakos
Keyword(s):  
Electron Tunneling ◽  
Metal Insulator ◽  
Precise Control ◽  
Force Microscopy ◽  
Langmuir Blodgett ◽  
Current Voltage ◽  
Metal Insulator Metal ◽  
Current Voltage Characteristics ◽  
Monolayer Assembly

The characterization of Langmuir–Blodgett thin films of 10,12-pentacosadiynoic acid (PDA) and their use in metal–insulator–metal (MIM) devices were studied. The Langmuir monolayer behavior of the PDA film was studied at the air/water interface using surface tension–area isotherms of polymeric and monomeric PDA. Langmuir–Blodgett (LB, vertical deposition) and Langmuir–Schaefer (LS, horizontal deposition) techniques were used to deposit the PDA film on various substrates (glass, quartz, silicon, and nickel-coated film on glass). The electrochemical, electrical and optical properties of the LB and LS PDA films were studied using cyclic voltammetry, current–voltage characteristics (I–V), and UV–vis and FTIR spectroscopies. Atomic force microscopy measurements were performed in order to analyze the surface morphology and roughness of the films. A MIM tunnel diode was fabricated using a PDA monolayer assembly as the insulating barrier, which was sandwiched between two nickel layers. The precise control of the thickness of the insulating monolayers proved critical for electron tunneling to take place in the MIM structure. The current–voltage characteristics of the MIM diode revealed tunneling behavior in the fabricated Ni–PDA LB film–Ni structures.

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